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  • 1
    Electronic Resource
    Electronic Resource
    Laser ablation deposition as a preparation method for sensor materials
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 41 (1994), S. 145-149 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(94)80103-7
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Pb-Sr-Ca-Cu-O high T"c superconducting material via oxalate route at various pH values
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 160 (1989), S. 369-374 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(89)90077-4
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  • 3
    Electronic Resource
    Electronic Resource
    Sorption in pulsed laser deposition of multicomponent materials: Experiment versus modeling (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2901-2908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition rate, elemental composition, and spatial distribution of both deposition rate and of composition in the deposit were studied experimentally during the room temperature pulsed laser ablation of multicomponent targets of PbZr0.65Ti0.35O3, Bi2Sr2CuO6, and CuInSe2. Different material dependent modes of behavior of the deposition rate, composition, and their spatial distribution were observed with increasing pressure of ambient gas (oxygen, argon). Comparison of the obtained experimental data with the results of the previous modeling of pulsed laser deposition in a gas revealed a number of discrepancies. The possible reason for the discrepancies between the experimental observations and the model predictions was suggested to arise due to an assumption of the unit sticking probability of the species in the modeling. Qualitative phenomenological analysis of the deposition process as a sorption of ablated species on the substrate surface was performed for the studied multicomponent materials with respect to the nature and pressure of ambient gas. Good agreement between the experimental data and the conclusions of such an analysis indicated considerable influence of sorption on the deposition process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371139
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of relaxor-based PbLu0.5Nb0.5O3–PbTiO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4274-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin films of relaxor-based PbLu0.5Nb0.5O3–PbTiO3 solid solution (PLuNT) with compositions near the morphotropic phase boundary were formed by in situ pulsed laser deposition onto La0.5Sr0.5CoO3/(100)MgO (LSCO/MgO). The phase composition of the PLuNT films was sensitive to the deposition temperature (550–710 °C), with single-phase perovskite formation only at 690 °C. The perovskite PLuNT films were pseudocubic and epitaxial, with (001) planes parallel to the substrate surface. At room temperature, capacitors Au/PLuNT/LSCO exhibited ferroelectric behavior (maximum polarization Pm≅29 μC/cm2, remnant polarization Pr≅14 μC/cm2, coercive field Ec≅70 kV/cm), and zero-field dielectric permittivity about ε≅300–450. A broad peak in ε was observed around 350 °C. With increasing deposition temperature, although the volume fraction of the pyrochlore phase decreased, Pm, Pr, and Ec all decreased, while ε remained unchanged. The suppression of polarization in the capacitors, both compared to that in the PLuNT ceramics and under the variation of the deposition temperature, was explained by the presence and evolution of passive layers near the electrodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290452
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed-laser deposition of diamond-like carbon: Relations between laser fluence, velocity of carbon ions, and bonding in the films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2915-2920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the pulsed-laser deposition process, high intensity laser pulses expel material from a solid target and form expanding plasma near the solid surface. The expansion of the plasma produces a forward-directed beam of ionized and neutral species with typical energies of 1–100 eV. In this study, amorphous diamond-like carbon (DLC) thin films were deposited onto silicon substrates at room temperature using an XeCl excimer laser (wavelength 308 nm, pulse length 20 ns) with laser fluences in the range 5–45 J cm−2, on a pyrolytic graphite target. The effect of laser fluence on the velocity and kinetic energy distribution of carbon ions was measured by time-of-flight (TOF) spectrometry using a system based on a Faraday cup with biased grids, and a multichannel plate based particle detector. We have found high kinetic energies, up to 500 eV, for expelled atomic species. In order to study the effect of the energy of the arriving ions on the structure of DLC, the bonding of carbon atoms in films, deposited under similar conditions as in the TOF measurements, was studied by x-ray absorption near-edge structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369057
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  • 6
    Electronic Resource
    Electronic Resource
    Dielectric nonlinearities in ferroelectric thin-film heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the film–electrode interface on the ac-electric field dependence of the dielectric permittivity in ferroelectric thin-film heterostructures has been studied. The dielectric nonlinearities in epitaxial thin-film heterostructures of ferroelectric PbZr0.65Ti0.35O3 and relaxor ferroelectric (PbMg1/3Nb2/3O3)0.68–(PbTiO3)0.32 were measured at subswitching fields. A dramatic difference between the dielectric nonlinearities possessed by ferroelectric films and those exhibited by the corresponding heterostructures was revealed both by model evaluations and experimental observations. In the heterostructures, due to the presence of an interface layer the dielectric nonlinearities can be considerably suppressed and their type can be changed compared to those in the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342051
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental studies and modeling of Pb–Zr–Ti–O film growth in pulsed laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5489-5496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rate and composition of films deposited by laser ablation of Pb(Zr0.65Ti0.35)O3, both in vacuum and in ambient oxygen and argon with laser fluences in the range 0.3–3.0 J/cm2, were studied experimentally with using energy dispersive x-ray analysis. The film growth rate increased in vacuum with an increase in laser fluence and demonstrated two modes of behavior upon adding gas: decreased at low laser fluence and increased nonmonotonously at high laser fluence. Deposition in vacuum resulted in Pb-deficient films with the Pb/Ti ratio decreasing with an increase in laser fluence, while deposition in a gas resulted in a strong increase of Pb content with the Pb/Ti ratio increasing faster under strong laser irradiation. Changes in the film growth rate and composition were similar upon adding either oxygen or argon. No noticeable changes in the spatial distribution of the film growth rate and composition were found in a gas ambient with respect to a vacuum ambient. The obtained experimental results were analyzed using a phenomenological description of the film growth as a sorption of ablated species on the substrate surface and assuming the species retarding in a gas, with respect to vacuum, due to collisions of the species with gas molecules. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367379
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-induced deposition and etching of materials: A new technology for sensor fabrication
    Amsterdam : Elsevier
    Sensors and Actuators 17 (1989), S. 75-79 
    Details
    ISSN: 0250-6874
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0250-6874(89)80066-6
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of annealing processes on the structural, compositional and electro-optical properties of CuIn0.75Ga0.25Se2 thin films (1996)
    Springer
    Journal of materials science 7 (1996), S. 213-219 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Crystalline defects, such as the density of voids, grain boundaries and dislocations, in Cu(In,Ga) Se2 absorber layers depend on the fabrication conditions and determine to a large extent the efficiency of photovoltaic devices. The material properties, however, can be improved significantly by using post-deposition processes. In this paper, the effects of post-deposition heat treatments on properties of CuIn0.75Ga0.25Se2 (CIGS) thin films are investigated. Selected flash evaporated samples were subsequently processed under several sets of conditions, including vacuum, selenium, inert (argon) and forming gas (a 9:1 mixture of N2:H2) ambients, at different temperature and times. Structural, compositional and electro-optical properties of both as-deposited and annealed films were studied using a variety of analytical techniques. X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies of the films showed a columnar grain structure with strong 〈 112 〉 preferred orientation, which after heat treatments relaxed to give a chalcopyrite structure. Raman analysis showed that the annealing process reduced the full-wave half-maximum (FWHM) value from 20 to 10 cm−1 indicating a change in both film composition and microstructure. In addition, X-ray fluorescence (XRF) and Rutherford backscattering spectroscopy (RBS) revealed that the composition was approaching that of the polycrystalline starting material. Both n- and p-type conductivities were observed with resistivity values in the range 10−1 to 106 Ω cm. Annealing in selenium atmosphere altered the n-type conductivity to p-type. To confirm improvements in optical properties of annealed films, photoacoustic spectroscopy (PAS) was employed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00133118
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition and characterization of copper indium gallium diselenide films by laser ablation and flash evaporation for use in solar cells (1997)
    Springer
    Journal of materials science 32 (1997), S. 5611-5613 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Copper indium gallium diselenide (CIGS) thin films have shown considerable promise for use as an absorber layer in high-efficiency solar cells. The initial results obtained from the preparation of CIGS films via laser ablation and flash evaporation are presented along with a comparison of the two deposition processes. The as-deposited CIGS films have been characterized by a variety of techniques, namely Rutherford back scattering and energy dispersive analysis using X-rays for composition measurements X-ray diffraction and Raman spectroscopy for structure elucidation, SEM for surface examination, and the four-point probe for resistivity measurements. In essence, good-quality coatings of CIGS were produced from both deposition processes in terms of their stoichiometry, electrical and structural properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018684726577
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