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  • American Institute of Physics (AIP)  (47)
  • 2005-2009
  • 1995-1999  (14)
  • 1985-1989  (33)
  • 1955-1959
  • 1
    Electronic Resource
    Electronic Resource
    Dynamics of cluster scattering from surfaces (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3831-3837 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have carried out stochastic trajectory simulations of the scattering of argon clusters, Arn, n=5 to 26, from a Pt(111) surface. At incident energies of 0.1 and 0.5 eV per atom, the clusters fragment almost completely into individual atoms. Some atoms remain trapped on the surface, but the majority scatter. For the larger clusters, the angular distributions of the scattered atoms peak near the surface tangent, and are almost independent of the incident angle. The mean kinetic energy of atoms is largest for those scattered near the surface tangent, and decreases as the scattering angle approaches the surface normal. These trends are in qualitative accord with the results of experimental studies of cluster scattering from surfaces. A multiple binary collision mechanism involving atom–atom collisions within the cluster as well as atom–surface collisions is responsible for this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456662
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  • 2
    Electronic Resource
    Electronic Resource
    Energy disposal in the photofragmentation of W(CO)6: Experimental observations and physical models (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7217-7225 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Energy disposal to the CO product formed upon the 351 nm photodissociation of W(CO)6 has been monitored using the method of time-resolved infrared laser absorption spectroscopy. The nascent CO product can be characterized by effective vibrational, rotational, and translational temperatures; Tv=1080±60 K, T0r(v=0)=560±50 K, and T0t(v=0 J=10) =1550±200 K. These results are considered in light of various models for energy disposal in the photofragmentation reaction. Vibrational energy disposal is consistent with a modified version of phase space theory termed "early'' phase space theory, EPST. Rotational and translational energy release is not consistent with phase space theory or its variants, e.g., EPST and the separate statistical ensembles model, but appears in qualitative accord with an impulsive model. We propose that, in general, vibrational energy release occurs early in the exit channel for the reaction, relative to rotational and translational energy release.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455300
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  • 3
    Electronic Resource
    Electronic Resource
    Transport properties of ground state oxygen atoms (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 3203-3210 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transport properties of dilute monatomic gases depend on the two body interactions between like atoms. When two ground state oxygen atoms interact, they can follow any of 18 potential energy curves corresponding to O2, all of which contribute to the transport properties of the ground state atoms. Transport collision integrals have been calculated for those interactions with an attractive minimum in the potential by accurately representing ab initio quantum mechanical potential energy curves with the Hulburt–Hirschfelder potential. Repulsive ab initio potential energy curves have been accurately represented either with the exponential repulsive potential or with an exponential repulsive potential with an additional Gaussian term to model a shoulder-like feature on the repulsive wall. Results are given for viscosity, thermal conductivity, and diffusion and they are compared with previous theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454977
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray emission from plasmas created by smoothed KrF laser irradiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 3438-3447 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray emission from plasmas created by the Naval Research Laboratory Nike KrF laser [Phys. Plasmas 3, 2098 (1996) ] was characterized using imaging and spectroscopic instruments. The laser wavelength was 1/4 μm, and the beams were smoothed by induced spatial incoherence (ISI). The targets were thin foils of CH, aluminum, titanium, and cobalt and were irradiated by laser energies in the range 100–1500 J. A multilayer mirror microscope operating at an energy of 95 eV recorded images of the plasma with a spatial resolution of 2 μm. The variation of the 95 eV emission across the 800 μm focal spot was 1.3% rms. Using a curved crystal imager operating in the 1–2 keV x-ray region, the density, temperature, and opacity of aluminum plasmas were determined with a spatial resolution of 10 μm perpendicular to the target surface. The spectral line ratios indicated that the aluminum plasmas were relatively dense, cool, and optically thick near the target surface. The absolute radiation flux was determined at 95 eV and in x-ray bandpasses covering the 1–8 keV region. The electron temperature inferred from the slope of the x-ray flux versus energy data in the 5–8 keV region was 900 eV for an incident laser energy of 200 J and an intensity of ≈1013 W/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871496
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  • 5
    Electronic Resource
    Electronic Resource
    A three-dimensional model for inductively coupled plasma etching reactors: Azimuthal symmetry, coil properties, and comparison to experiments (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1337-1344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inductively coupled plasma (ICP) etching reactors are rapidly becoming the tool of choice for low gas pressure, high plasma density etching of semiconductor materials. Due to their symmetry of excitation, these devices tend to have quite uniform etch rates across the wafer. However, side to side and azimuthal variations in these rates have been observed, and have been attributed to various asymmetries in pumping, reactor structure and coil properties. In this article, a three-dimensional computer model for an ICP etching reactor is reported whose purposes is to investigate these asymmetries. The model system is an ICP reactor powered at 13.56 MHz having flat coils of nested annuli powering Ar/N2 and Cl2 plasmas over a 20-cm diam wafer. For demonstration purposes, asymmetries were built into the reactor geometry which include a wafer-load lock bay, wafer clamps, electrical feeds to the coil, and specifics of the coil design. Comparisons are made between computed and experimentally measured ion densities and poly-silicon etch rates in Cl2 plasmas. We find that the electrical transmission line properties of the coil have a large influence on the uniformity of plasma generation and ion fluxes to the wafer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362932
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  • 6
    Electronic Resource
    Electronic Resource
    Al and B ion-implantations in 6H- and 3C-SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2479-2485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low (keV) and high (MeV) energy Al and B implants were performed into n-type 6H- and 3C-SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance-voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P-type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358776
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  • 7
    Electronic Resource
    Electronic Resource
    Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1086-1088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on which the technique is based. We show that when H and He gas implants are combined they produce a synergistic effect which enables thin-film separation at a much lower total implantation dose than that required for either H or He alone. By varying the H and He implantation doses we have been able to isolate the physical and chemical contributions of the gases to the blistering processes. We find that the essential role of H is to interact chemically with the implantation damage and create H-stabilized platelet-like defects, or microvoids. The efficiency of H in this action is linked to its effective lowering of the silicon internal surface energy. The second key component of the process is physical; it consists of diffusion of gas into the microvoids and gas expansion during annealing, which drives growth and the eventual intersection of the microvoids to form two continuous separable surfaces. He is more efficient than H for this process since He does not become chemically trapped at broken bonds and thus segregates into microvoids more readily. In particular, we have demonstrated that a 1×1016 cm−2 He dose in combination with a 7.5×1015 cm−2 H dose are sufficient to shear and transfer a thin silicon film onto a handle wafer after bonding the two wafers together. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120945
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  • 8
    Electronic Resource
    Electronic Resource
    A study of the effects of post-deposition treatments on CdS/CdTe thin film solar cells using high resolution optical beam induced current (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3725-3727 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical beam induced current (OBIC) technique was applied using a scanning optical microscope (SOM) to study n-Cds/p-CdTe thin film solar cells which had been subjected to different post-deposition treatments. High spatial resolution maps were obtained of the current collection with and without an applied reverse bias. The quantum efficiency of the devices was also measured with high spatial resolution. The results both quantify and illustrate vividly the manner in which the well known CdCl2 treatment increases collection efficiency. The high uniformity in the best cells indicates that grain boundaries do not play a substantial role in limiting collection efficiency. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115986
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  • 9
    Electronic Resource
    Electronic Resource
    Electro-optic phase modulation and optical second-harmonic generation in corona-poled polymer films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1800-1802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electro-optic phase modulation was measured along with optical second-harmonic generation in thin films of a new copolymer containing a dicyanovinyl-terminated azo dye side chain. Orientational order was imparted to these films by poling with a corona discharge. Details of the electro-optic measurement technique, in which the real part of the electro-optic coefficient can be determined directly, are presented. Taking advantage of the increased orientation imparted by corona poling and the hindered motion of the nonlinear optical moiety in the side chain of the polymer leads to substantial improvements in both the magnitude and stability of nonlinear optical susceptibilities compared to guest-host polymer systems ordered by electrode poling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99785
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature oxidation of implanted TiSi2 films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 789-791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of implantation on the low-temperature oxidation behavior of TiSi2 films is investigated. Critical fluences of implanted impurities, such as As and Ga, are shown to alter the dominant oxidation mechanism in the films and greatly enhance oxidation. Different techniques, such as inert- and self-ion implantation, and implantation at elevated temperatures, were done so that ion-induced damage and chemical effects could be separately studied. These results, along with the dose dependency of the film's behavior, will be presented. A model is proposed which accounts for these observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99285
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