Publication Date:
2019-06-27
Description:
Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
NASA-CR-162627
,
DOE/JPL-954331-80/9
,
JPL-9950-299
,
QR-17
Format:
application/pdf
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