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  • 2010-2014  (311)
  • 1990-1994  (166)
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  • 1
    Publication Date: 2014-09-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Conference , notRev
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  • 2
    Publication Date: 2022-05-25
    Description: © The Author(s), 2013. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Quaternary Science Reviews 76 (2013): 16-28, doi:10.1016/j.quascirev.2013.05.024.
    Description: A proxy system model may be defined as the complete set of forward and mechanistic processes by which the response of a sensor to environmental forcing is recorded and subsequently observed in a material archive. Proxy system modeling complements and sharpens signal interpretations based solely on statistical analyses and transformations; provides the basis for observing network optimization, hypothesis testing, and data-model comparisons for uncertainty estimation; and may be incorporated as weak but mechanistically-plausible constraints into paleoclimatic reconstruction algorithms. Following a review illustrating these applications, we recommend future research pathways, including development of intermediate proxy system models for important sensors, archives, and observations; linking proxy system models to climate system models; hypothesis development and evaluation; more realistic multi-archive, multi-observation network design; examination of proxy system behavior under extreme conditions; and generalized modeling of the total uncertainty in paleoclimate reconstructions derived from paleo-observations.
    Description: MNE and DMT were funded by NOAA/C2D2 grant NA10OAR4310115; SETW gratefully acknowledges support from an American Association of UniversityWomen Dissertation Fellowship. Work cited in this review was supported by NSF grants 0349356, 0724802 and 0902715, NOAA grants NA06OAR4310115 and NA08OAR4310682, and the University of Arizona’s Department of Geosciences and Institute of the Environment.
    Keywords: Forward modeling ; Observational network optimization ; Data-model comparison ; Hypothesis evaluation ; Reconstruction ; Uncertainty modeling
    Repository Name: Woods Hole Open Access Server
    Type: Article
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4032-4039 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsyP1−y epilayers were deposited by gas-source molecular beam epitaxy onto (100) InP, systematically varying the As fraction from 0.15 to 0.75, corresponding to a lattice mismatch of 0.5%–2.4%. Thin (≈190 A(ring)), largely strained InAsyP1−y films exhibit a smooth, planar morphology and good photoluminescence characteristics even for strains exceeding 2%. In thicker films, depending on the growth parameters, capacitance-voltage depth profiling indicates a strain and thickness dependent formation of electrically active defects that results in a net ionized donor concentration with a peak value as high as 2×1019 cm−3 after about 500 A(ring) of growth. Corresponding photoluminescence measurements suggest that these defects are associated with a shallow level about 10 meV below the conduction band edge of the InAsyP1−y. As the thickness further increases, the net residual donor concentration reduces to 〈3×1015 cm−3 near the top surface of 1.2-μm-thick epilayers with y≤0.6.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 199-206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by nitrogen and boron ion irradiations at 300 K, and by helium ion bombardment at 80, 300, and 523 K has been investigated as function of ion dose (1×1012–1×1016 cm−2) and subsequent anneal temperature (70–650 °C) by sheet resistance and Hall effect measurements. The dose dependence of the sheet resistance shows two regions for all cases considered: (I) for lower doses in which the sheet resistance (resistivity) increases up to a maximum of about 6×106 Ω/(D'Alembertian) (180 Ω cm), and (II) for higher doses in which the sheet resistance decreases with dose. Temperature dependent Hall measurements for materials in region (I) show thermally activated carrier densities with activation energies between 0.21 and 0.29 eV. The temperature dependence of the sheet resistance in region (II), on the other hand, is consistent with the assumption of a hopping conductivity. Varying the substrate temperature during the irradiations yields no measurable effects for samples implanted in region (I). For the case of He+ bombardments at 523 K, higher sheet resistances are obtained in region (II) as compared to samples irradiated at lower temperatures. For the case of He+ at 80 K and N+ at 300 K a third region (III) is observed for doses higher than 7 and 2×1014 cm−2, respectively, in which a renewed increase in the sheet resistance with increasing dose is detected. Rutherford backscattering-channeling results suggest that this behavior is related to the creation of an amorphouslike region in the InGaAsP layer. Annealing of samples amorphized by He+ at 80 K yields higher resistivities (up to a factor of 6×105 relative to that of the unimplanted material), and improved stability of the high resistivity as compared to the other implantation schedules investigated.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2296-2299 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of photogeneration of charge in polysilanes resulting from multiple pulse excitation in thermally stimulated current (TSC) measurements are reported. The amount of charge that was photogenerated at 80 K and collected during the heating of the sample up to 300 K, ranged from 1×10−9 to 4×10−8 C/cm2 for electric fields of 10–30 V/μm and illumination energy up to 2.5 mJ/cm2 and was found to be dependent both on the electric fields applied during illumination and thermal ramping and on the illumination energy. The results are compared to an idealized model that qualitatively describes for photogeneration of the charge at 80 K and its collection during the TSC measurement. According to this model, multiple pulse excitation at 80 K leads to a buildup of photogenerated charge density in the surface region of the sample and as the temperature is increased, electron-hole recombination occurs, limiting the amount of charge collected by the external circuit.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2220-2221 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer–Cottrell lock array in a Si/Si1−xGex/Si heterostructure (0.4〈x〈0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2126-2128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by helium ion bombardment at 300 and 80 K has been investigated as a function of ion dose (1×1012–1×1016 cm−2) and subsequent annealing temperature (70–650 °C) by sheet resistance and Hall effect measurements as a function of temperature. Irradiations at 300 K are found to induce an increase in the resistivity by a factor of up to 3×105 relative to that of the unimplanted material. Materials bombarded at 80 K with doses higher than 7×1014 cm−2 exhibit a further increase in the sheet resistance and higher stability upon subsequent annealing. Rutherford backscattering channeling results suggest that this behavior is related to the creation of a highly polycrystalline or amorphous region in the InGaAsP layer which occurs for irradiations performed at 80 K, but not at 300 K.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3194-3196 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation of InAsyP1−y layers grown on (001) InP substrates by gas-source molecular beam epitaxy was examined using transmission electron microscopy (TEM) and cathodoluminescence (CL) imaging. InAsyP1−y films with a thickness of 190 A(ring) were prepared, systematically varying the As content from y=0.30 and 0.77, corresponding to a lattice mismatch between 0.97% and 2.5%. Relaxation was anisotropic, with 60° misfit dislocations lying predominantly along [11¯0], with a much lower density of dislocations along [110]. For y(approximately-greater-than)0.48, CL and plan-view TEM observations show slip traces which make angles of about ±40° with the [11¯0] direction. These slip traces correspond to pure-screw dislocation segments (gliding on {111}) cross slipping to glide on planes approximately parallel to {011}.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain on F+ and Si+ implantation-induced compositional disordering in InGaAsP strained layer multiple-quantum-well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation-enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 713 (1994), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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