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  • Articles  (124)
  • American Institute of Physics (AIP)  (124)
  • 2010-2014  (51)
  • 1990-1994  (73)
  • Physics  (124)
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  • Articles  (124)
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  • 1
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    Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-04
    Description: We have observed several unexpected phenomena when a trace amount of Fe atoms is deposited onto the CoFeB/MgO interface in Ta/CoFeB/MgO/Ta multilayers. With the nominal thickness of the introduced Fe atoms ( t Fe ) varying from 0 to 0.1 Å, the effective magnetic anisotropy energy ( K eff ) of annealed multilayers is remarkably enhanced from 1.28 × 10 6  erg/cm 3 to 2.14 × 10 6  erg/cm 3 . As t Fe further increasing, the K eff decreases and even becomes negative when t Fe  〉 1 Å, indicating the change from perpendicular magnetic anisotropy to in-plane magnetic anisotropy. The analysis by X-ray photoelectron spectrometer reveals that the Fe atoms at annealed CoFeB/MgO interface show different electronic structures as t Fe increasing, which combine with O atoms to form FeO x (x 
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    Studies on the relation between the eigenvalue and enhancement of Kerr effect for magneto-optical materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6830-6839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the universal additivity law of the interference of light the following was achieved. (i) An analytic representation between the eigenvalue of the Kerr rotation angle θ0k and the enhanced θk for a double-layered film, θk=en1 θ0k, was obtained theoretically, where e is the enhancement factor and n1 is the refractive index of the dielectric medium. (ii) An analytic representation between θk and θ0k (θk=e013e123n2θ0k) of the trilayered film [bilayered transparent media and monolayered magneto-optical (MO) medium], was also obtained, where e013 and e123 are the enhancement factors: The calculated θk value is in good agreement with experimental results for e=1. In general, the theoretical calculation shows that θk is related to the thickness of the transparent media. Thus, if one wants to get an optimum value for θk, the thickness of the first transparent film layer (such as a glass substrate) must be selected carefully. It also shows that if the variation of the thickness of the glass substrate is 5 nm, θk could vary by 0.1° for MnBiCe films. (iii) The relation connecting θk with θ0k1 and θ0k2 for bilayered MO films has been theoretically studied, where θ0k1 and θ0k2 are the eigenvalues of the Kerr rotation angle of MO materials 1 and 2, respectively. Finally, θk for a Fe/Co film was calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355083
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  • 3
    Electronic Resource
    Electronic Resource
    Neutron-diffraction and Mössbauer effect study of the preferential silicon site occupation and magnetic structure of Nd2Fe14−xSixB (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6798-6809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A neutron-diffraction study of Nd2Fe14−xSixB has shown that silicon preferentially occupies the 4c site in the transition-metal sublattice in Nd2Fe14B. Silicon also exhibits a moderate preference for the 8j1 site, is almost excluded from the 16k2 site, and avoids the 16k1, 8j2, and 4e sites. The silicon site occupancy is correlated with a preference for a silicon atom to have rare-earth atoms in its coordination environment. The Mössbauer spectra of Nd2Fe14−xSixB have been fit with a model which takes into account the distribution of near-neighbor environments of an iron atom due to the presence of silicon. These fits show that the substitution of silicon in the near-neighbor environment of an iron atom primarily influences the long-range contributions to the hyperfine field experienced by the iron. The mechanism for the increase in the Curie temperature when silicon is added to Nd2Fe14B-type magnets is more subtle than previously believed, but can be explained by the relative decrease in the proportion of short iron-iron bonds when silicon is substituted for iron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355080
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  • 4
    Electronic Resource
    Electronic Resource
    Neutron diffraction and Mössbauer effect study of several Nd2Fe17−xAlx solid solutions : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6029-6031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum-substituted Nd2Fe17−xAlx solid solutions with x=2.30, 4.44, 6.13, 8.00, and 9.40 have been studied by neutron diffraction and Mössbauer spectroscopy. A Rietveld analysis of the neutron scattering indicates that the aluminum atoms have a high initial affinity for the 18h site, show a high affinity for the 6c site at high aluminum concentrations, and are absent from the 9d site at all aluminum concentrations. The Mössbauer spectra show a maximum in both the maximum and weighted average hyperfine field for x≈2. This indicates that the lattice expansion which occurs with aluminum substitution is sufficient, at least for small values of x, where magnetic dilution is small, to enhance the intrasublattice coupling between the iron moments, and to increase the magnetic hyperfine fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353459
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  • 5
    Electronic Resource
    Electronic Resource
    Impurity effects on both the creation and the migration of Ga vacancies in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 674-684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of impurities, such as Si and Be, on both the creation and the migration of Ga vacancies in annealing of GaAs were investigated by a slow positron beam technique. The results show that vacancies diffuse from the surface during the annealing and one of the dominant types is a monovacancy of Ga, VGa, in Be-doped GaAs and/or Si-doped GaAs, while the other is a divacancy of VGa-VAs in undoped GaAs. In annealing the bilayer structures composed of the Si-doped layer grown on the Be-doped layer, it was found that VGa is a major type of defect rather than VGa-VAs if the Si concentration is higher or lower than the Be one in GaAs, but VGa-VAs is dominant if the concentrations of the impurities are similar. This proposes that the interaction between Si and Be is stronger than that of VAs-BeGa and/or VGa-SiGa. The Ga interstitial IGa is created in the Be-doped layer where IGa interacts with VGa created from the surface and suppresses the migration of VGa. This supports the validity of the kick-out mechanism involving a column-III interstitial rather than the Longini mechanism for Be diffusion in GaAs. In Si-doped GaAs, VGa is created from the surface and the diffusion constant of VGa decreases with the increase of Si doping concentration. This implies that VGa forms a complex of SiGa-VGa and the interaction time of VGa at the Si donor by making a complex of SiGa-VGa is a rate-limiting step in the diffusion of VGa in GaAs. The present results propose the creation of IGa and VGa in the Be-diffused GaAs and in Si-diffused GaAs, respectively. This is consistent with the Fermi-level effect of the impurities on the creation of those defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349647
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  • 6
    Electronic Resource
    Electronic Resource
    Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 182-192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350376
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  • 7
    Electronic Resource
    Electronic Resource
    A Mössbauer-effect study of a series of R2Fe14C hard magnetic materials : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6040-6042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 57Fe Mössbauer-effect spectra of the series of hard magnetic materials, R2Fe14C, where R is Nd, Gd, Tb, Dy, Ho, and Lu, have been measured at 295 K. All of these carbides exhibit uniaxial magnetic anisotropy. The spectra resemble those obtained for the related R2Fe14B compounds and have been fit with the model used earlier for Nd2Fe14B. The magnitude of the hyperfine field on each site, as a function of rare earth, parallels the Curie temperature; the maximum hyperfine fields and the maximum Curie temperature are observed for Gd2Fe14C. A linear correlation is observed between the hyperfine fields on the six sites in the analogous borides and carbides; however, these fields are systematically smaller in the carbides. The decrease in the tetragonal unit cell c-axis length in the carbides apparently reduces the exchange interactions between the 8j and 16k iron layers and hence reduces the moments. The isomer shift on each site decreases as the atomic number of the rare earth increases, whereas the quadrupole interactions are independent of rare earth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347763
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  • 8
    Electronic Resource
    Electronic Resource
    Reaction between SiC and W, Mo, and Ta at elevated temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2796-2800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of W, Mo, and Ta in contact with single-crystal β-SiC at elevated temperatures has been investigated using Auger sputter profiling. All three metals were found to form a thin-mixed layer of metal carbide and silicide upon metal deposition at room temperature. This layer is thought to be the result of surface defects which weaken the Si—C bonds and allow a low-temperature reaction to occur. Upon heating, the Ta readily reacts with the SiC substrate and forms a mixed layer of Ta carbide and silicide at annealing temperatures as low as 400 °C, however, the W/SiC and Mo/SiC systems are stable and change very little after annealing at 850 and 800 °C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346457
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  • 9
    Electronic Resource
    Electronic Resource
    Neutron-diffraction and Mössbauer-effect studies of Pr2(Fe1−xMnx)14B (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4762-4764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A neutron-diffraction investigation of a series of Pr2(Fe1−xMnx)14B samples, with x values of 0.00, 0.11, 0.22, 0.30, and 0.35, reveals a preference for the manganese to occupy the 8j2 transition-metal site,the transition-metal site with the largest Wigner–Seitz cell volume. Similar site occupancies have been reported previously for Er2(Fe1−xMnx)14B and Y2(Fe1−xMnx)14B. An analysis of the 295-K Mössbauer spectrum of Pr2(Fe0.89Mn0.11)14B indicates that the internal hyperfine fields on the six iron sites are more substantially reduced from those found in Pr2Fe14B than would be expected from a simple magnetic dilution with manganese. The extent of the field reduction for a specific site increases with the number of manganese near neighbors for the site. Fits of the Mössbauer spectra of Pr2(Fe0.78Mn0.22)14B, Pr2(Fe0.70Mn0.30)14B, and Pr2(Fe0.65Mn0.35)14B, which are paramagnetic at room temperature, give quadrupole splittings consistent with the quadrupole interactions in Pr2Fe14B.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344778
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  • 10
    Electronic Resource
    Electronic Resource
    Surface electron-diffraction patterns of β-FeSi2 films epitaxially grown on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1747-1761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconducting β-FeSi2 is drawing much current research interest because of hoped-for silicon-based optoelectronics applications. The study of heteroepitaxial film growth on silicon depends heavily upon several transmission and reflection electron-diffraction techniques. Because of the complicated crystal structure of this material, the possibility of competing heteroepitaxial relationships, the propensity for formation of epitaxial variants by rotation twinning, and the uncertainty in the crystalline surface nets, the analysis of experimental diffraction patterns is complicated. A theoretical reference for a number of fundamental electron-diffraction patterns is provided and they are illustrated with a broad range of experimentally obtained patterns from the surfaces of epitaxial films. In situ transmission reflection high-energy electron diffraction (RHEED) (transmission electron diffraction with conventional RHEED instrumentation), from rough but epitaxial films, is of great utility and quite feasible with epitaxial systems such as this one, which exhibit a tendency toward islanding. The possibilities for experimentally distinguishing, with this technique, the competing epitaxial relationships on Si(111) are clarified; it is found that the β-FeSi2(110) matching face is certainly present in these samples and the (101) may be also. An experimental determination of the two-dimensional space groups of the (100), (110), and (101) faces is also presented—in the first and third cases the surface unit meshes are different from the simple projections of the bulk crystalline unit cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354804
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