Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 4045-4049
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A thorough detailed study of donor and acceptor properties in doped GaAs–(Ga,Al)As semiconductor superlattices is performed within the fractional-dimensional approach, in which the real anisotropic "impurity+semiconductor superlattice" system is modeled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz, and no fittings either with experiment or with previous variational calculations. The present fractional-dimensional calculated results for the donor and acceptor energies in GaAs–(Ga,Al)As semiconductor superlattices are found in quite good agreement with previous variational calculations and available experimental measurements. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370309
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