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  • American Institute of Physics (AIP)  (75)
  • Cell Press  (33)
  • 2010-2014  (42)
  • 1995-1999  (66)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7902-7909 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unimolecular dissociation of trichloroethylene in its electronic ground state has been investigated using an infrared multiphoton dissociation combined with photofragmentation translational spectroscopy to measure product translational energies. The main reaction channel was found to be HCl elimination on the basis of observed product time-of-flight (TOF) spectra. A center-of-mass translational energy distribution for this channel provides direct evidence for competition between two channels, three- and four-centered HCl eliminations. Cl elimination was found to be a minor but significant channel from observed Cl+ and C2HCl+TOF spectra. The branching ratios were determined as 0.28, 0.55, and 0.17 for the three- and four-centered HCl eliminations and the Cl elimination, respectively. The three-centered channel exhibits a "statistical'' translational energy distribution which is typical for a reaction with no potential energy barrier in the reverse reaction, that is to say, no exit barrier reaction. In contrast, the four-centered channel exhibits a "nonstatistical'' translational energy distribution having a peak at around 2 kcal/mol in energy, indicating that a significant exit barrier exists in the channel. The fraction of potential energy converted to translational energy was estimated to be around 10%. Ab initio calculations at the QCISD(T)/6-311+G**//MP2(FC)/6-31G* level were employed to confirm the reaction mechanism. The agreement in the energetics is quite good. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 2014-12-10
    Description: We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al 2 O 3 gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density ( D it ) values at the Al 2 O 3 /GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 3
    Publication Date: 2014-07-01
    Description: We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al 2 O 3 /GaSb MOS interface properties. The Al 2 O 3 /GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density ( D it ) of ∼4.5 × 10 13  cm −2 eV −1 . We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al 2 O 3 /GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 177-191 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cold fluid theory of the Pierce beam–plasma system is modified by the incorporation of warm plasma effects. The controlling parameter α in the cold theory, where α=Lωp/V0, L=diode width, ωp=plasma frequency, and V0=beam velocity at injection, is replaced in the warm theory by an effective value of α involving the thermal velocity. The theory is verified by means of a fluid simulation code; the phase states for a cold plasma, including the chaotic state, are recovered for a warm plasma, but with a shift in values of the bifurcation parameter. Furthermore, in order to include plasma kinetic effects, an extensive electrostatic particle simulation code is developed to model the Pierce system. Among the new physical effects arising in this particle model are the local and global thermalization of electrons by electrostatic waves, and blocking oscillations due to particle reflection and trapping. As the parameter α is decreased, the electric field at the injection point typically changes state as follows: blocking oscillation→small fluctuations→quasisteady oscillation→prechaotic oscillation→chaos→blocking oscillation→dc electric field. The mechanics of chaotic oscillations in the Pierce system are examined with particular regard to kinetic effects. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 349-351 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bootstrap current Jb=−IcP'B/〈B2〉 and χi= (square root of)2NνiMiTi(Ic/e)2〈1/B2〉/||∇ψ ||2 are valid for both the banana and the Pfirsch–Schlüter regimes for any finite value of the collision frequency at a radius where the local aspect ratio A approaches unity. Here, I=RBt with R the major radius, Bt the toroidal magnetic field strength, and the prime denoting the derivative with respect to the poloidal flux ψ. Thus, the bootstrap current does not vanish, even in the collisional regime, when A approaches unity. The physical reason for this dramatic result is that the magnitudes of the electron and ion parallel viscosity approach infinity as A approaches unity. This also indicates that the conventional theory underestimates the magnitude of bootstrap current in an ultralow-aspect-ratio tokamak. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 965-970 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approximate analytic expression for plasma viscosity in finite aspect ratio tokamaks is constructed from all the asymptotic limits. The resultant viscosity coefficient is compared with the numerical results of the solution of the linearized drift kinetic equation. Neoclassical fluxes are reformulated in terms of the viscosity and friction coefficients. These fluxes can be employed to study the omnigeneous property of high-beta small, or large aspect ratio tokamaks. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 374-379 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniformity of surface layer characteristics of InAlAs Schottky diodes, the so-called level-shift diodes, on InAlAs/InGaAs high electron mobility transistors is noninvasively examined by photoreflectance (PR) spectroscopy, on-wafer mapping of PR signal intensity at a particular wavelength, and analyzed data. From the observed Franz–Keldysh oscillations, we have been able to evaluate the built-in dc electric fields in the i–n+, or so-called UN+, InAlAs Schottky diode layer. The on-wafer fluctuation of the electric fields in the diode layer, which is due to the fluctuation of the thickness of the diode layer, is clearly visualized by on-wafer mapping. Nonuniform composition of the InAlAs diode layers is also observed. The shape of the contour lines in the map of the PR signal intensity is related to the structure of the growth equipment. Our results suggest that photoreflectance mapping is quite effective for noninvasive screening of device epiwafers. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3317-3320 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An accurate and simple method for the measurement of specific volumes of solid organic compounds under high pressures was proposed. The principle of this method was based on the flotation methods, in which pressure was adjusted to find the floating equilibrium point at isothermal condition. One of the advantages of the proposed method is that the specific volume of solid organic compounds under high pressures can be determined with almost the same accuracy as that of immersion liquids. The specific volumes of naphthalene were measured at 293.15 K and at pressures up to 440 MPa. The immersion liquid used consisted of aqueous NaNO3 solutions. The specific volumes of the aqueous NaNO3 solutions under high pressures were measured with the glass piezometer method proposed in our previous study. Experimental results of the specific volume and also the isothermal compressibility were compared with the literature data. It was found that good agreement was obtained between the present results and the literature data for the volume compressibility. © 1995 American Institute of Physics.
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