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Three-dimensionally bonded spongy graphene material with super compressive elasticity and near-zero Poisson’s ratio (2015)

Yingpeng Wu; Ningbo Yi; Lu Huang; Tengfei Zhang; Shaoli Fang; Huicong Chang; Na Li; Jiyoung Oh; Jae Ah Lee; Mikhail Kozlov; Alin C. Chipara; Humberto Terrones; Peishuang Xiao; Guankui Long; Yi Huang; Fan Zhang; Long Zhang; Xavier LepróCarter Haines; Márcio Dias Lima; Nestor Perea Lopez; Lakshmy P. Rajukumar; Ana L. Elias; Simin Feng; Seon Jeong Kim; N. T. Narayanan; Pulickel M. Ajayan; Mauricio Terrones; Ali Aliev; Pengfei Chu; Zhong Zhang; Ray H. Baughman; Yongsheng Chen

Springer Nature

In: Nature Communications

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Publikationsdatum: 2015-01-22

Beschreibung: Article The incorporation of the desirable properties of graphene into three-dimensional materials remains challenging. Here, the authors report the scalable self-assembly of graphene sheets into spongy materials with very low densities, and near-zero and largely strain-independent Poisson's ratios in all directions. Nature Communications doi: 10.1038/ncomms7141 Authors: Yingpeng Wu, Ningbo Yi, Lu Huang, Tengfei Zhang, Shaoli Fang, Huicong Chang, Na Li, Jiyoung Oh, Jae Ah Lee, Mikhail Kozlov, Alin C. Chipara, Humberto Terrones, Peishuang Xiao, Guankui Long, Yi Huang, Fan Zhang, Long Zhang, Xavier Lepró, Carter Haines, Márcio Dias Lima, Nestor Perea Lopez, Lakshmy P. Rajukumar, Ana L. Elias, Simin Feng, Seon Jeong Kim, N. T. Narayanan, Pulickel M. Ajayan, Mauricio Terrones, Ali Aliev, Pengfei Chu, Zhong Zhang, Ray H. Baughman, Yongsheng Chen

Digitale ISSN: 2041-1723

Thema: Biologie , Chemie und Pharmazie , Allgemeine Naturwissenschaft , Physik

Publiziert von Springer Nature

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Genome-wide association study identifies new susceptibility loci for adolescent idiopathic scoliosis in Chinese girls (2015)

Zezhang Zhu; Nelson Leung-Sang Tang; Leilei Xu; Xiaodong Qin; Saihu Mao; Yueming Song; Limin Liu; Fangcai Li; Peng Liu; Long Yi; Jiang Chang; Long Jiang; Bobby Kin-Wah Ng; Benlong Shi; Wen Zhang; Jun Qiao; Xu Sun; Xusheng Qiu; Zhou Wang; Fei Wang; Dingding Xie; Ling Chen; Zhonghui Chen; Mengran Jin; Xiao Han; Zongshan Hu; Zhen Zhang; Zhen Liu; Feng Zhu; Bang-ping Qian; Yang Yu; Bing Wang; K. M. Lee; Wayne Y.W. Lee; T. P. Lam; Yong Qiu; Jack Chun-Yiu Cheng

Springer Nature

In: Nature Communications

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Publikationsdatum: 2015-09-24

Beschreibung: Article The authors perform a genome-wide association study of adolescent idiopathic scoliosis patients of Han Chinese descent, and identify 3 new loci for disease susceptibility. Nature Communications doi: 10.1038/ncomms9355 Authors: Zezhang Zhu, Nelson Leung-Sang Tang, Leilei Xu, Xiaodong Qin, Saihu Mao, Yueming Song, Limin Liu, Fangcai Li, Peng Liu, Long Yi, Jiang Chang, Long Jiang, Bobby Kin-Wah Ng, Benlong Shi, Wen Zhang, Jun Qiao, Xu Sun, Xusheng Qiu, Zhou Wang, Fei Wang, Dingding Xie, Ling Chen, Zhonghui Chen, Mengran Jin, Xiao Han, Zongshan Hu, Zhen Zhang, Zhen Liu, Feng Zhu, Bang-ping Qian, Yang Yu, Bing Wang, K. M. Lee, Wayne Y.W. Lee, T. P. Lam, Yong Qiu, Jack Chun-Yiu Cheng

Digitale ISSN: 2041-1723

Thema: Biologie , Chemie und Pharmazie , Allgemeine Naturwissenschaft , Physik

Publiziert von Springer Nature

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Electron delocalization and charge mobility as a function of reduction in a metal–organic framework (2018)

Michael L. Aubrey; Brian M. Wiers; Sean C. Andrews; Tsuneaki Sakurai; Sebastian E. Reyes-Lillo; Samia M. Hamed; Chung-Jui Yu; Lucy E. Darago; Jarad A. Mason; Jin-Ook Baeg; Fernande Grandjean; Gary J. Long; Shu Seki; Jeffrey B. Neaton; Peidong Yang; Jeffrey R. Long

Springer Nature

In: Nature Materials

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Publikationsdatum: 2018-06-05

Beschreibung: Electron delocalization and charge mobility as a function of reduction in a metal–organic framework Electron delocalization and charge mobility as a function of reduction in a metal–organic framework, Published online: 04 June 2018; doi:10.1038/s41563-018-0098-1 A conducting metal–organic framework with charge delocalization by reductive potassium insertion is demonstrated. Integration into a field-effect transistor shows similar mobilities to semiconductors, with a mobility estimated to be at least 0.84 cm2 V–1 s–1.

Print ISSN: 1476-1122

Digitale ISSN: 1476-4660

Thema: Chemie und Pharmazie , Maschinenbau , Allgemeine Naturwissenschaft , Physik

Publiziert von Springer Nature

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Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories (2017)

Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F. Scott; Cheol Seong Hwang; An Quan Jiang

Springer Nature

In: Nature Materials

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Publikationsdatum: 2017-11-21

Beschreibung: Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories, Published online: 20 November 2017; doi:10.1038/nmat5028 An in-plane memory device based on multidomain BiFeO3 thin films is reported. Highly conductive domain walls appear only during the application of a read-out field, a non-destructive process that reduces accumulation of mobile defects on the walls.

Print ISSN: 1476-1122

Digitale ISSN: 1476-4660

Thema: Chemie und Pharmazie , Maschinenbau , Allgemeine Naturwissenschaft , Physik

Publiziert von Springer Nature

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