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  • 2015-2019  (218)
  • 1985-1989  (169)
  • 1965-1969  (36)
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  • 11
    Electronic Resource
    Electronic Resource
    Elastic interaction of a wedge crack with a screw dislocation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1839-1843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic field of a semi-infinite wedge crack and its interaction with a screw dislocation under mode III loading conditions are examined. The stress field around the wedge crack is expressed in terms of a wedge stress intensity factor. The rate of falloff of the stress field with distance from the crack tip is found to be a function of the wedge angle. The relationship between the stress intensity factors for the wedge and sharp cracks is derived and used to estimate the magnitude of stress relaxation occurring at the crack tip due to crack blunting. The crack extension force for the wedge crack is calculated and is shown to be zero. The modifications in the stress field and the local wedge stress intensity factor due to the presence of the dislocation are calculated. From the image stress on the dislocation, the condition for the emission of dislocations from the wedge crack is obtained in terms of the critical wedge stress intensity factor for dislocation generation. It is found that the emission of dislocations from the crack tip is more difficult when the crack is blunting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334412
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  • 12
    Electronic Resource
    Electronic Resource
    Theoretical investigation of the traveling wave excitation in a TE N2 laser (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1478-1481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigation of traveling wave excitation using the property of photon addition has been carried out in a 50-cm-long TE N2 laser tube with ten separated discharge sections. The laser power outputs under traveling wave excitation have been calculated numerically with varying gas pressures from 30 to 85 Torr and applied voltages from 14 to 21 kV, and compared with those of simultaneous excitation. Theoretical results show that the laser peak power increases with increasing applied voltage, and has a maximum value at gas pressure P(approximately-equal-to)60 Torr. The laser pulse width is narrowed and the laser power is doubled under the traveling wave excitation, compared with simultaneous excitation. Experimental confirmation also has been conducted. Experimentally observed gas presssure dependence of output power agrees qualitatively well with theoretical results. The maximum discrepancy in the absolute values between theory and experiment is approximately 50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334458
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  • 13
    Electronic Resource
    Electronic Resource
    Determination of nitrogen-sulfur compounds by ion chromatography (1986)
    s.l. : American Chemical Society
    Analytical chemistry 58 (1986), S. 158-160 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00292a038
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  • 14
    Electronic Resource
    Electronic Resource
    Interdiffusion in a symmetrically strained Ge/Si superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low-angle x-ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100731
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  • 15
    Electronic Resource
    Electronic Resource
    Growth and characterization of Ge/Si strained-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Ge/Si strained-layer superlattices (SLS's) with periodicities of a few monolayers have been successfully grown and characterized by Raman scattering spectroscopy. Structures with alternating Ge and Si layers were grown on Si substrates of different orientations. A thick 200 nm Ge0.4Si0.6 buffer layer was grown prior to the growth of the superlattice to make the strain distribution of the superlattice symmetrical and thus to maintain the pseudomorphic growth of the superlattices. Folded acoustic phonon peaks observed from these Ge/Si SLS samples can be used to determine the superlattice periodicity. The observed optical phonon frequencies were found to depend strongly on superlattice periodicity. A quantitative interpretation of this phenomenon was presented. Subsequent annealing of these samples reveals that the transition from pure Ge and/or Si layers to GexSi1−x alloy becomes more pronounced as the annealing time and temperature increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100369
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  • 16
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering and exciton-optical phonon coupling in CdTe/(Cd,Mn)Te quantum wells (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering at the E0 gap from longitudinal optical phonons in CdTe/(Cd,Mn)Te multiple quantum wells has been studied near the strain split n=1 exciton ground state. A large resonance enhancement is observed with distinct incoming and outgoing channels, in agreement with luminescence excitation spectra. Phonons are observed from CdTe wells and (Cd,Mn)Te barriers, indicative of small valence-band offsets for this superlattice system. At extreme resonance, striking linewidth broadening and damping effects for the alloy phonon modes are witnessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98328
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  • 17
    Electronic Resource
    Electronic Resource
    Determination of free carrier concentration profiles and the valence-band discontinuity energy of Hg0.7Cd0.3Te/Cd(4% Zn)Te heterojunctions using organic semiconductor layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1040-1042 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage data are utilized to obtain the free-carrier concentration in n- and p-type Hg1−yCdyTe layers, and to measure the valence-band discontinuity energy of a p-type Hg0.7Cd0.3Te/Cd(4% Zn)Te isotype heterojunction. To facilitate measurement, rectifying contact was made to the Hg1−yCdyTe layers using one of two organic materials—metal-free phthalocyanine and copper phthalocyanine. Contrary to previous results with this heterojunction system, we find that holes are accumulated near the Cd(4% Zn)Te side (rather than Hg1−yCdyTe side). We obtain a valence band discontinuity energy (ΔEv ) equal to (110±20) meV, and a fixed interface charge density of σ=−(5.9±0.3)×1010 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100791
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  • 18
    Electronic Resource
    Electronic Resource
    Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1490-1492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single layers of Yb at the Hg1−xCdxTe(110) interface prevent Al-Te reaction and dramatically increase the Hg concentration at the interface. Synchrotron radiation photoemission studies of the interface as a function of Al deposition show a two orders of magnitude increase in the Hg/Te core intensity ratio as a result of the interlayer-induced change in atomic interdiffusion. Calculations of thermodynamic parameters following a semiempirical alloying model suggest that other rare earths should also act as effective diffusion barriers at mercury-cadmium-telluride/reactive metal junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99108
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  • 19
    Electronic Resource
    Electronic Resource
    Food Flavor Changes, Relationship between Monocarbonyl Compounds and Flavor of Potato Chips (1965)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 13 (1965), S. 131-134 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60138a009
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  • 20
    Electronic Resource
    Electronic Resource
    Domain size in ordered packing of monodispersed particles (1988)
    s.l. : American Chemical Society
    Langmuir 4 (1988), S. 1128-1130 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00083a012
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