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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 271-273 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (〉3×) in the linewidth of these SQW lasers when the facet reflectivities are enhanced. This observation is explained theoretically on the basis of the very low losses in coated SQW lasers and the value of the spontaneous emission factor at low threshold currents. We also report on the modulation frequency response parameter of these SQW lasers.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1468-1470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-μm-wide apertures provided that the broad-area section is sufficiently long.
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-μm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-μm-wide stripe and 425-μm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1147-1149 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An (AlAs/GaAs/AlAs/AlGaAs)/GaAs(001) double-barrier superlattice grown by molecular beam epitaxy (MBE) is studied by combining synchrotron radiation and double-crystal x-ray diffraction (DCD). The intensity of satellite peaks is modulated by the wave function of each sublayer in one superlattice period. Simulated by the x-ray dynamical diffraction theory, it is discovered that the intensity of the satellite peaks situated near the modulating wave node point of each sublayer is very sensitive to the variation of the layer structural parameters. The accurate layer thickness of each sublayer is obtained with an error less than 1 A(ring). Furthermore, x-ray kinematical diffraction theory is used to explain the modulation phenomenon. © 1996 American Institute of Physics.
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1−x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. © 1999 American Institute of Physics.
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  • 6
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Retinoic acid (RA), through its cognate receptors (retinoic acid receptors,RARs), plays an important role in the ontogenesis and maintenance of the normal function of murine Harderian and submandibular glands. In the present study, autoradiography was used to study RA binding to these glands. Both glands showed high radioactive labelling after [14C]-RA administration in normal and partially vitamin A-deficient (VAD) mice. The peak uptake was at 6 h after [14C]-RA administration in normal mice and at 0.5 h in VAD mice. At 24 h, RA binding remained high in normal mice, while it decreased significantly in VAD mice. In western blots with an antibody recognizing all forms of RARs, a band of molecular weight 51 kDa was seen in homogenates of both glands. Immunohistochemically, RAR staining was found in the nuclei of the glandular cells. The Harderian gland exhibited more intense staining than the submandibular gland. In the latter, the most intense staining was seen in the acinar cells, followed by the intercalated duct cells. The granular convoluted tubule showed weak immunostaining and the striated duct was negative. In the Harderian gland, RAR immunostaining was observed in both type I and II cells, but only part of them stained with RAR antibody. The expression of RARα, β, and γ transcripts was studied by in situ hybridization using specific oligonucleotide probes. The cell-specific expression of RARα mRNA in the submandibular gland corresponded to the RAR proteins detected by immunohisto-chemistry, while the RARβ transcript was mainly seen in the striated duct. The transcripts of RARα and β were evenly distributed in type I and II glandular cells of the Harderian gland. RARγ labelling was below detectable levels in both glands. This result suggests that RA and RARs regulate the functions of Harderian and submandibular glands in a cell-specific manner.
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  • 7
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract  Retinoic acid (RA), through its cognate receptors (retinoic acid receptors,RARs), plays an important role in the ontogenesis and maintenance of the normal function of murine Harderian and submandibular glands. In the present study, autoradiography was used to study RA binding to these glands. Both glands showed high radioactive labelling after [14C]-RA administration in normal and partially vitamin A-deficient (VAD) mice. The peak uptake was at 6 h after [14C]-RA administration in normal mice and at 0.5 h in VAD mice. At 24 h, RA binding remained high in normal mice, while it decreased significantly in VAD mice. In western blots with an antibody recognizing all forms of RARs, a band of molecular weight 51 kDa was seen in homogenates of both glands. Immunohistochemically, RAR staining was found in the nuclei of the glandular cells. The Harderian gland exhibited more intense staining than the submandibular gland. In the latter, the most intense staining was seen in the acinar cells, followed by the intercalated duct cells. The granular convoluted tubule showed weak immunostaining and the striated duct was negative. In the Harderian gland, RAR immunostaining was observed in both type I and II cells, but only part of them stained with RAR antibody. The expression of RARα, β, and γ transcripts was studied by in situ hybridization using specific oligonucleotide probes. The cell-specific expression of RARα mRNA in the submandibular gland corresponded to the RAR proteins detected by immunohistochemistry, while the RARβ transcript was mainly seen in the striated duct. The transcripts of RARα and β were evenly distributed in type I and II glandular cells of the Harderian gland. RARγ labelling was below detectable levels in both glands. This result suggests that RA and RARs regulate the functions of Harderian and submandibular glands in a cell-specific manner.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 10 (1999), S. 215-221 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Boundary layer meteorology 49 (1989), S. 309-316 
    ISSN: 1573-1472
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract By considering two analytical solutions of G. I. Taylor (1921) for dispersion in homogeneous turbulence, we derive a quantitative upper limit for the timestep dt to be used in the stochastic Lagrangian model; a more severe upper limit will probably exist in inhomogeneous turbulence. For practical purposes, there is no lower limit to the timestep.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Boundary layer meteorology 43 (1988), S. 93-98 
    ISSN: 1573-1472
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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