Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2864-2866
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 1012 (5.5×1011) cm−2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.113455
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