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  • Springer  (412)
  • American Institute of Physics (AIP)  (52)
  • Periodicals Archive Online (PAO)
  • 2015-2019  (231)
  • 2000-2004  (18)
  • 1995-1999  (73)
  • 1985-1989  (70)
  • 1975-1979  (62)
  • 1970-1974  (22)
  • 1955-1959  (4)
  • 1950-1954  (8)
  • 1925-1929  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Molecular dynamics by numerical simulation in zeolites: Methane in NaA (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7482-7491 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A molecular dynamical study of one methane molecule in a cavity of NaA zeolite is performed in order to compare calculated to experimental data obtained by infrared spectroscopy and neutron scattering experiments in the temperature range 300–30 K. The calculation shows the trajectory of the molecule in the cavity and then the occupied volume as a function of energy. It allows the calculation of average quantities and correlation functions: (i) the mean field felt by the molecule comparable to the field responsible for the induced infrared band ν1, (ii) the average of the potential energy (to be compared to the heat of adsorption) and of the velocity squared, (iii) the external frequency distribution, and (iv) the position autocorrelation function which is related to the dynamical structure factor seen by neutron scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456182
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  • 2
    Electronic Resource
    Electronic Resource
    Role of metal–molecule chemistry and interdiffusion on the electrical properties of an organic interface: The Al–F16CuPc case (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6236-6242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry and electronic structure of interfaces between Al and copper hexadecafluorophthalocyanine (F16CuPc) are studied via x-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy (UPS), and current–voltage measurements. Electron injection barriers measured by UPS are reported. Analysis of the Al–F16CuPc reaction shows the formation of a phase of three-dimensional (F16CuPc)3Al species. The reacted region is extended at the Al-on-F16CuPc interface and narrow at the F16CuPc-on-Al interface. A series of metal/F16CuPc/metal structures is fabricated to study the impact of the interface chemistry and deposition sequence on device performances. It is found that (F16CuPc)3Al forms a low conductivity region, which has considerable bearing on the electron current. The interface fabrication sequence, which defines the thickness of the reacted region, therefore has a profound impact on device performance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419263
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  • 3
    Electronic Resource
    Electronic Resource
    Organic semiconductor heterointerfaces containing bathocuproine (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4515-4519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The four organic–organic heterointerfaces formed by depositing the organic semiconductor bathocuproine on tris(8-hydroxy-quinoline)aluminum (Alq3), N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′ biphenyl-4,4″ diamine (α-NPD), 4,4′-N,N′-dicarbazolyl-biphenyl (CBP), and copper phthalocyanine (CuPc) have been studied using ultraviolet photoelectron spectroscopy. The relative positions of the vacuum levels and highest occupied molecular orbital levels of the organics were measured at each interface. Within our experimental uncertainty of 100 meV, the vacuum levels were found to align at all four interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371395
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic states and effective negative electron affinity at cesiated p-GaN surfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3209-3212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of, and the effects of cesium (Cs) and oxygen (O) adsorption on, the p-GaN(001) surface are investigated via photoemission spectroscopy. Bulk- and surface-sensitive photoemission measurements, and oxygen exposure of clean surfaces, demonstrate the existence of filled surface states which extend ∼0.6 eV above the valence band maximum. The valence band maximum measured after the removal of the surface states gives a downward band bending and electron affinity equal to 1.2±0.2 and 3.3±0.2 eV, respectively. The surface dipole layer induced by exposure to oxygen followed by Cs deposition lowers the vacuum level by 2.8±0.3 eV with respect to the valence and conduction band edges. Under these conditions, the vacuum level is approximately 0.7 eV below the conduction band minimum of the bulk, corresponding to the effective negative electron affinity at this surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371191
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  • 5
    Electronic Resource
    Electronic Resource
    Diffusivity of the hydrogen molecule sorbed in NaA zeolite by a neutron scattering experiment (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5097-5102 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The diffusion of hydrogen in NaA zeolite was studied by incoherent neutron scattering. An experiment was carried out on samples loaded with 1.2 to 3.4 molecules per cavity and at several temperatures from 70 to 150 K. The angular (θ) dependence of the elastic and quasielastic intensities shows that the H2 molecule has a translational motion in a nonrestricted volume. A diffusion model where the molecule undergoes isotropic jumps of mean length l¯=3.9 A(ring) independent of temperature and is at rest for a time τ0 between two jumps accounts for the width of the quasielastic scattering in the entire (θ,T) range (τ0=10.8 ps at T=100 K). This leads to a diffusion coefficient D(cm2/s)=6×10−4 exp(E/RT) with E=2 kJ/mol for the less loaded samples. The diffusion coefficient increases slightly with the loading.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457601
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  • 6
    Electronic Resource
    Electronic Resource
    Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage (I–V) characteristics of Al, Mg, and Au Schottky contacts to atomically clean n-GaN(0001)-1×1 surfaces prepared in an ultrahigh vacuum were investigated. The Al/n-GaN contact is rectifying at room temperature and becomes Ohmic after annealing at 500 °C. Coupled with previous photoemission spectroscopy data, this result demonstrates that the origin of the Ohmicity is the reaction-induced doping of the interface. For nonannealed interfaces, the Schottky barrier heights determined from I–V characteristics are in qualitative agreement with the results obtained by photoemission spectroscopy. We find that the ideality factor of the barrier is close to unity for the unreactive interface i.e. Au/GaN, but significantly higher for the reactive interfaces, i.e., Al/GaN and Mg/GaN. Our experimental results suggest that the reaction-induced defects and thermionic field emission play an important role in the electrical behavior of these interfaces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331653
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic structure, diffusion, and p-doping at the Au/F16CuPc interface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4549-4554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces formed by evaporating Au on copper hexadecafluorophthalocyanine (F16CuPc) and F16CuPc on Au are studied via ultraviolet photoemission spectroscopy and x-ray photoemission spectroscopy. The energy position of the molecular levels is found to depend on the deposition sequence. The Au-on-F16CuPc interface exhibits a lower hole injection barrier than the F16CuPc-on-Au interface. This behavior is attributed to the diffusion of Au into the organic matrix at the Au-on-top interface, in which they behave as acceptors. Band bending consistent with p doping, i.e., upward away from the metal interface, is observed in Au-doped F16CuPc films. Current–voltage measurements on Au/F16CuPc/Au sandwich structures show a higher electron injection barrier at the top Au electrode contact than at the bottom electrode contact, also consistent with p-type doping F16CuPc by Au. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406967
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  • 8
    Electronic Resource
    Electronic Resource
    Lithium doping of semiconducting organic charge transport materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4986-4992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effects of lithium (Li) incorporation in the cathodes of organic light-emitting devices. A thermally evaporated surface layer of metallic Li is found to diffuse through, and subsequently dope, the electron transporting organic semiconducting thin films immediately below the cathode, forming an Ohmic contact. A diffusion length of ∼700 Å is inferred from analyses of the current–voltage and secondary ion mass spectrometry data. The conductivity of the Li-doped organic films is ∼3×10−5 S/cm. Photoemission spectroscopy suggests that Li lowers the barrier to injection at the organic/cathode interface, introduces gap states in the bulk of the organic semiconductor, and dopes the bulk to facilitate efficient charge transport. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359161
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  • 9
    Electronic Resource
    Electronic Resource
    Negative electron affinity at the Cs/AlN(0001) surface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1433-1435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of cesium (Cs) adsorption on band bending and electron affinity at the AlN(0001)-1×1 surface are investigated via ultraviolet and x-ray photoemission spectroscopy. The movement of the Fermi level indicates an initial interaction between Cs and empty surface states, followed by an increase in band bending presumably linked to metallization. The electron affinity, χ, of the clean AlN surface is positive and equal to 1.9±0.3 eV. The Cs-surface dipole layer decreases χ by 2.6±0.3 eV, leading to evidence of true negative electron affinity at the surface of this important material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123573
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  • 10
    Electronic Resource
    Electronic Resource
    Electron affinity at aluminum nitride surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1346-1348 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122158
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