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  • Articles  (89)
  • American Meteorological Society  (59)
  • American Institute of Physics (AIP)  (30)
  • 2015-2019  (32)
  • 2005-2009  (24)
  • 1995-1999  (17)
  • 1990-1994  (16)
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  • Articles  (89)
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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of ion implanted waveguides in Nd:YAG (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3440-3446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation into Nd:YAG has been used to produce waveguides which are capable of supporting laser action. The refractive index profiles have been characterized as a function of ion dose and energy, implant temperature, and subsequent thermal annealing. Transmission losses down to 1.2 dB/cm have been obtained in the optimized waveguides. There is a temperature independent index enhancement of ∼0.15% in the electronic stopping (guiding) region. The nuclear collision damage is temperature dependent, and shows an initial index increase (∼0.3% for dose 1 × 1016 ions/cm2), but a subsequent decrease of up to several percent, which forms an optical barrier, as has been observed in many other crystalline materials. The best mode confinement and attenuation is obtained by utilizing the low dose nuclear index enhancement produced by several equally spaced implants (multiple energy) to give a broad well with Δn∼0.25%. Several unusual features of the profiles are reported and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348962
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  • 2
    Electronic Resource
    Electronic Resource
    Fourier transform far infrared spectroscopy of the ν'3 vibration of SiC2 in Ar at 10 K (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 5424-5428 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A Fourier transform study of the vibrational spectrum of SiC2 produced by vaporizing mixtures of silicon and carbon-12 or carbon-13 at 2900 K and quenching the products in argon at 10 K, has enabled the identification for the first time of the ν‘3(b2) vibrational mode, which the results of an earlier matrix study had suggested should lie in the far infrared. The assignment of a frequency observed at 160.4 cm−1 to the ν″3 mode is confirmed by isotopic data and supported by the predictions of ab initio calculations. Optimized force constants have been derived using the frequencies of the newly assigned mode, the previously reported, ν‘1(a1)=1741.3 and ν″2(a1)=824.3 cm−1 vibrations, and their values on single and double carbon-13 substitution. Two models, cyclic and T-shaped, are discussed for the molecule, which is of C2V symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459638
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution x-ray spectrometer based on spherically bent crystals for investigations of femtosecond laser plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4049-4053 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ultrashort-pulse, laser-produced plasmas have become very interesting laboratory sources to study spectroscopically due to their very high densities and temperatures, and the high laser-induced electromagnetic fields present. Typically, these plasmas are of very small volume and very low emissivity. Thus, studying these near point source plasmas requires advanced experimental techniques. We present a new spectrometer design called the focusing spectrometer with spatial resolution (FSSR-2D) based on a spherically bent crystal which provides simultaneous high spectral (λ/Δλ(approximate)104) and spatial resolution ((approximate)10 μm) as well as high luminosity (high collection efficiency). We described in detail the FSSR-2D case in which a small, near point source plasma is investigated. An estimate for the spectral and spatial resolution for the spectrometer is outlined based on geometric considerations. Using the FSSR-2D instrument, experimental data measured from both a 100 fs and a nanosecond pulse laser-produced plasma are presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149249
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  • 4
    Electronic Resource
    Electronic Resource
    Charge and mass resolved time of flight observations of 140 fs laser produced ions : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 333-335 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ions from this plasma are self-extracting with energies of 0.1 to 100 keV, the extraction potential being one of the desired observables. The charge/mass (z/μ, μ is mass in AMU) separation is provided by a static magnetic field (B⋅L=1280 G cm, FWHM=14 mm) located 5 cm from the linear (1−d) detector. Displacement along the detector axis is thus proportional to z/μ(1/v). The detector is a gold cathode MCP with a fast (sub-ns) phosphor. The phosphor output is coupled into a streak camera (typical sweep 8.5 or 24 μs total) through a coherent fiber bundle. Streak images are grabbed with a 14-bit CCD. The signature of any specific ion is a straight line of slope proportional to z/μ. Since there are usually more than one charge state of a given ion, integer multiple slopes appear. Thus z and m can be found. Absolute calibration is taken from the slope of the proton streak, which is always present with our plasmas. While providing the same information as a Thomson parabola, the straight line images are easier to extract information from and offer resolution with less energy dependence. By providing mass and time of flight information, the product of z⋅Te can be determined unambiguously during the hydrodynamic acceleration of the plasma. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146404
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  • 5
    Electronic Resource
    Electronic Resource
    Pixel array detector for time-resolved x-ray scattering : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3360-3360 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the development of a large area hybrid pixel detector designed for time-resolved synchrotron x-ray scattering experiments in which limited frames, with a high framing rate, are required. The final design parameters call for a 1024×1024 pixel array device with 150-micron pixels that is 100% quantum efficient for x-rays with energy up to 20 keV, with a framing rate in the microsecond range. The device will consist of a fully depleted diode array bump bonded to a CMOS electronic storage capacitor array with eight frames per pixel. The two devices may be separated by a x-ray blocking layer that protects the radiation-sensitive electronics layer from damage. The signal is integrated in the electronics layer and stored in one of eight CMOS capacitors. After eight frames are taken, the data are then read out, using clocking electronics external to the detector, and stored in a RAM disk. Results will be presented on the development of a prototype 4×4 pixel electronics layer that is capable of storing at least 10,000 12-keV x-ray photons for a capacity of over 50 million electrons with a noise corresponding to 2 x-ray photons per pixel. The diode detective layer and electronics storage layer along with the radiation damage and blocking layers will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147389
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  • 6
    Electronic Resource
    Electronic Resource
    A low threshold, room temperature 1.64 μm Yb:Er:Y3Al5O12 waveguide laser (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7651-7653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature 1.64 μm laser operation of Yb:Er:Y3Al5O12 has been achieved using a planar waveguide grown by liquid phase epitaxy. A comparatively low threshold of 17 mW was achieved for this transition indicating low waveguide propagation loss for this material and suggesting good prospects for low threshold 3 μm and upconversion visible lasers based on this system. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357939
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  • 7
    Electronic Resource
    Electronic Resource
    Thermally bonded planar waveguide lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1139-1141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique for fabricating active planar waveguide devices is reported. This process, based on the thermal bonding of precision finished crystal or glass components, allows waveguides to be assembled from very dissimilar materials and could be applied to a wide range of solid state laser or other optical media. The waveguide propagation losses, inferred from the laser performance, are found to be 0.7 dB/cm for Nd:Y3Al5O12 bonded to Y3Al5O12, Nd:Y3Al5O12 bonded to glass, and 0.4 dB/cm for Nd:Gd3Ga5O12 bonded to Y3Al5O12 devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119846
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  • 8
    Electronic Resource
    Electronic Resource
    Ultrafast x-ray streak camera for use in ultrashort laser-produced plasma research : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 719-721 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In recent years there has been growing interest in energetic ((approximately-greater-than)100 eV), temporally short (〈10 ps) x rays produced by ultrashort laser-produced plasmas. The detection and temporal dispersion of the x rays using x-ray streak cameras has been limited to a resolution of 2 ps, primarily due to the transit time dispersion of the electrons between the photocathode and the acceleration grid. The transit time spread of the electrons traveling from the photocathode to the acceleration grid is inversely proportional to the accelerating field. By increasing the field by a factor of 7, we have minimized the effects of transit time dispersion in the photocathode/accelerating grid region and produce an x-ray streak camera with subpicosecond temporal resolution (≈900 fs). The streak camera has been calibrated using a Michelson interferometer and 100 fs, 400 nm laser light. The characteristics of the streak camera, along with the most recent x-ray streak data will be presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146269
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  • 9
    Electronic Resource
    Electronic Resource
    High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2486-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 μm deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85 °C) L-I characteristics and device performance have been evaluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109327
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1670-1672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of dose rate and temperature on the implantation damage accumulation in InP has been investigated. InP crystals were implanted at 80–323 K with 600 keV Si+ ions at a beam flux of 0.005–1.0 μA cm−2, and to total fluences of between 5×1012 and 2×1014 Si cm−2. The residual damage following implantation was analysed by the Rutherford backscattering/channeling technique. The results show that at 80 K, the influence of the beam flux on the accumulated displacement damage is small. However, at T≥295 K the displaced atom density, Nd, exhibits a power law dependence on J:Nd=αJn, with the value of n dependent on both the total ion dose and implant temperature. At 295 K and Si doses of 1–4×1013 cm−2, the value of n varies from 0.23 to 0.15.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108621
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