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  • 1
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    Viscoelasticity of collagen gels [Applied Physical Sciences] (2016)
    National Academy of Sciences
    Details
    Publication Date: 2016-05-18
    Description: The extracellular matrix (ECM) is a complex assembly of structural proteins that provides physical support and biochemical signaling to cells in tissues. The mechanical properties of the ECM have been found to play a key role in regulating cell behaviors such as differentiation and malignancy. Gels formed from ECM protein...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
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    AID stabilizes stem-cell phenotype by removing epigenetic memory of pluripotency genes (2013)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2013-06-28
    Description: The activation-induced cytidine deaminase (AID; also known as AICDA) enzyme is required for somatic hypermutation and class switch recombination at the immunoglobulin locus. In germinal-centre B cells, AID is highly expressed, and has an inherent mutator activity that helps generate antibody diversity. However, AID may also regulate gene expression epigenetically by directly deaminating 5-methylcytosine in concert with base-excision repair to exchange cytosine. This pathway promotes gene demethylation, thereby removing epigenetic memory. For example, AID promotes active demethylation of the genome in primordial germ cells. However, different studies have suggested either a requirement or a lack of function for AID in promoting pluripotency in somatic nuclei after fusion with embryonic stem cells. Here we tested directly whether AID regulates epigenetic memory by comparing the relative ability of cells lacking AID to reprogram from a differentiated murine cell type to an induced pluripotent stem cell. We show that Aid-null cells are transiently hyper-responsive to the reprogramming process. Although they initiate expression of pluripotency genes, they fail to stabilize in the pluripotent state. The genome of Aid-null cells remains hypermethylated in reprogramming cells, and hypermethylated genes associated with pluripotency fail to be stably upregulated, including many MYC target genes. Recent studies identified a late step of reprogramming associated with methylation status, and implicated a secondary set of pluripotency network components. AID regulates this late step, removing epigenetic memory to stabilize the pluripotent state.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3762466/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3762466/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Kumar, Ritu -- DiMenna, Lauren -- Schrode, Nadine -- Liu, Ting-Chun -- Franck, Philipp -- Munoz-Descalzo, Silvia -- Hadjantonakis, Anna-Katerina -- Zarrin, Ali A -- Chaudhuri, Jayanta -- Elemento, Olivier -- Evans, Todd -- AI072194/AI/NIAID NIH HHS/ -- HL056182/HL/NHLBI NIH HHS/ -- P30 CA008748/CA/NCI NIH HHS/ -- R01 HD052115/HD/NICHD NIH HHS/ -- R37 HL056182/HL/NHLBI NIH HHS/ -- T32 AI007621/AI/NIAID NIH HHS/ -- England -- Nature. 2013 Aug 1;500(7460):89-92. doi: 10.1038/nature12299. Epub 2013 Jun 26.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Surgery, Weill Cornell Medical College, New York, New York 10065, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/23803762" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Cell Dedifferentiation/genetics ; Cellular Reprogramming/genetics ; Cytidine Deaminase/genetics/*metabolism ; Epigenesis, Genetic/*genetics ; Female ; Fibroblasts/cytology/metabolism ; Gene Expression Regulation ; HEK293 Cells ; Humans ; Male ; Mice ; Pluripotent Stem Cells/*cytology/enzymology/*metabolism ; Transcription Factors/metabolism
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of thickness of multiple layer thin films by an x-ray-diffraction technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4454-4456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray-diffraction method for determining the thickness of multiple layer thin films grown on a single-crystal substrate is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AlGaAs/GaAs, were determined. Good agreement was obtained between the results from x-ray measurement and scanning electron microscopy data, demonstrating the high precision of this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357275
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray double-crystal analysis of misorientation and strain in GaAs/Si and related heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1154-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed x-ray double-crystal-diffractometry investigation of GaAs on Si tilted towards [110] direction has been carried out to understand the structure, misorientation, and residual stress present in this system. The structure of the GaAs epilayer is approximately triclinic, with the in-plane lattice parameters a and b being in most cases slightly larger than, and that along the growth direction c less than, the bulk GaAs. For vicinal angles between 0° and 5°, a tilt angle of up to 0.12° between GaAs and Si lattice is observed, inclined mostly in the same direction as the vicinal angle, but also having a small component in a perpendicular direction. A residual tensile stress of the order of 109 dyn/cm2 exists in the epilayer, which can be accounted for by the difference in the thermal expansion coefficients of GaAs and Si. The strain due to the lattice parameter mismatch between the two materials is found to be negligibly small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353282
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of the strain profile in thin Au/Ni multilayers by x-ray diffraction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3816-3820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation in Au/Ni multilayers was analyzed in detail using a dynamical theory of x-ray diffraction. The depth profile of strain in the modulation direction was determined by an iterative fitting of the calculated rocking curve with the experimental one. The repeat periods of Au/Ni multilayers used in this study range from 0.82 to 9.0 nm. The analysis indicates that the theoretical x-ray patterns are extremely sensitive to the amount of strain at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350896
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  • 6
    Electronic Resource
    Electronic Resource
    Comparative study of phosphosilicate glass on (100) silicon by furnace and rapid isothermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 367-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing experiments were carried out on phosphosilicate glass (PSG) films deposited on (100) silicon substrates by using a low-pressure chemical vapor deposition technique. Rapid isothermal processing and conventional furnace heating were used to study the electrical, structural, and mechanical characteristics of these films and the results of the two processes compared. A refractive index of 1.457 was obtained in the rapid isothermal annealing cycle of 800 °C/15S, but was 1.419 for the furnace annealing cycle (i.e., 800 °C/65S). Spreading resistance analysis has shown that the junction depth remains unchanged for an 800 °C/15S rapid isothermal annealing cycle. Stress measurements show that rapid isothermal annealing leads to less strain compared to furnance annealing. The x-ray photoelectron spectroscopy analysis shows that as compared to furnance annealing, rapid isothermal annealing provides a chemically homogenous interface. High-frequency capacitance voltage (C-V) measurements show that furnance-annealed samples are leaky and a higher concentration of oxygen-related defects are present in the PSG/Si interface. On the other hand, because of a relatively clean interface, a well behaved C-V characteristic is observed in the rapid isothermal annealed samples. In summary, as compared to furnace annealing, rapid isothermal annealing resulted in superior structural, mechanical, and electrical properties of PSG films on Si substrates. A plausible explanation of such behavior may be attributed to the difference in the radiation spectra of the two sources of energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347723
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  • 7
    Electronic Resource
    Electronic Resource
    Thickness measurement of thin films by x-ray absorption (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 499-501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffraction method for determining thicknesses of thin films grown on single-crystal substrates is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. The thickness of the thin film was computed from the absorption of the integrated diffracted x-ray intensity from the single-crystal substrate. Since the diffracted intensity from the film is not required, the film does not have to be single crystal in nature. Thus, thicknesses of less ordered, polycrystalline, or even amorphous films can be measured with high precision by this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347691
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  • 8
    Electronic Resource
    Electronic Resource
    Double crystal x-ray analysis of strain distribution in rapid thermal annealed, S-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3964-3969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double crystal x-ray analysis has been carried out on GaAs wafers implanted with 1.15 MeV sulfur ions at a dose of 5×1014/cm2, followed by rapid thermal anneal for 10 s at temperatures between 300 and 1100 °C. A systematic reduction of strain with increased annealing temperature has been observed, as measured from the separation between the peak of the unimplanted substrate and the major peak of the strained region. Calculations of strain distribution based on existing numerical models are correlated with implantation parameters using Pearson's type-VI distribution functions. Strain reduction after a silicon nitride encapsulation process is found to be equivalent to that after a 300 °C, 10 s rapid thermal anneal (RTA). It is also found that strain relaxation by RTA is strongly dependent on both sample size and the annealing geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347166
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  • 9
    Electronic Resource
    Electronic Resource
    Planar stress relaxation in solid phase epitaxial CaF2 films grown on (111)Si by in situ rapid isothermal processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1567-1569 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar strain in CaF2 films on (111) Si substrate has been measured by an x-ray double-crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103215
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  • 10
    Electronic Resource
    Electronic Resource
    Experimental evidence of photoeffects in silicon rapid isothermal diffusion (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1935-1937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid isothermal processing (RIP) based on incoherent radiation as a source of optical and thermal energy is emerging as a key low thermal budget technique for the processing of semiconductor devices and circuits. The continuing development of RIP technique for the fabrication of electronic and optical devices requires a microscopic understanding of various phenomena associated with RIP. Junction formation by diffusion process is an integral part of all semiconductor devices. In this letter, we have shown that for identical thermal budget, different values of sheet resistivity are observed when the samples are irradiated from front or back. These results cannot be explained by the various process models and computer aided design tools available in the literature. We have offered a qualitative explanation of the observed results based on the role of photoeffects in RIP. The availability of high-energy photons in the front irradiation configuration and consequent electronic excitation can lead to higher diffusion coefficients as well as higher activation of dopants, compared to the back irradiated case. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112822
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