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  • 2020-2024  (2)
  • 1995-1999  (197)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Microsystem technologies 3 (1997), S. 145-154 
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  In recent years, developments in the micro electronics industry have focused on semiconductors and semiconductor processes. However, microcircuit assembly technologies have lagged chip development. This has spurred research in interconnection and packaging creating many new technologies and enhancing integration. These new microelectronic technologies are enabling micro systems, and resulting in products, from portable work stations to advanced automotive electronics. This evolution of technology has also created the need to reexamine how we achieve a reliable system. Clearly, in highly competitive marketplaces, reliability is a key element in achieving successful products. To achieve a reliable product in a cost effective manner, “upstream problem solving” must be employed which focuses on root cause of failure. This paper provides an overview of the reliability assessment process needed to achieve effective microsystem development. A case study of reliability in a complex multi-chip module is presented which includes an assessment of the stochastic nature of via fatigue by applying Monte Carlo simulations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 704-707 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The DIII–D Thomson scattering system has been expanded to measure divertor plasma temperatures from 1 to 500 eV and densities from 0.05 to 8×1020 m−3. To complete this system, a difficult stray light problem was overcome to allow for an accurate Rayleigh scattering density calibration. The initial stray light levels were over 500 times higher than the expected Rayleigh scattered signal. Using a charge-coupled device (CCD) camera, various portions of the vessel interior were examined while the laser was fired through the vessel in air at atmospheric pressure. Image relaying, exit window tilting, entrance and exit baffle modifications, and a beam polarizer were then used to reduce the stray light to acceptable levels. The CCD camera gave prompt feedback on the effectiveness of each modification, without the need to reestablish vacuum conditions required when using the normal avalanche photodiode detectors (APD). Once the stray light was sufficiently reduced, the APD detectors provided the signal time history to more accurately identify the source location. We have also found that certain types of high reflectance dielectric coatings produce 10–15 times more scatter than other types of more conventional coatings. By using low-scatter mirror coatings and these new stray light reduction techniques, we now have more flexibility in the design of complex Thomson scattering configurations required to probe the central core and the new radiative divertor regions of the DIII–D vessel. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 251-259 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical treatment of the minority carrier transient spectroscopy (MCTS) experiment is presented. We have modeled the minority carrier flux through the depletion region of an illuminated Schottky diode held under reverse bias, and used these data to calculate the occupancy of minority carrier traps as a function of energy, capture cross section, and temperature. The model shows that the capacitance transient monitored in the MCTS experiment decreases in intensity as the temperature is raised. It is demonstrated that this causes inaccuracies in the measured deep level activation energy Ea derived from an Arrhenius plot of the data. Simulated MCTS spectra have been compared with measured MCTS spectra of hole emission from the gold donor in silicon, and very good agreement between modeled and experimental spectra is observed. The model explains the commonly observed phenomenon of a reduction in MCTS peak heights for increasing temperature, which is the opposite effect from that commonly observed in conventional deep level transient spectroscopy data. It is shown that the correct choice of rate window can significantly reduce errors in the measured value of Ea. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2871-2873 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient phenomenological model describing the temperature dependence of the output power of multiquantum well (MQW) lasers is presented. The model can predict all the general features of the experimental results. The effect of series resistance, thermal resistance, cavity length, leakage current, and facet reflectivity on the maximum achievable power are analyzed in a systematic manner. The calculated maximum operating temperature (Tm), defined as the heat sink temperature at which the saturated output power vanishes due to heating, is in reasonable agreement with reported experimental results. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 628-634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper concerns the Whipple model for grain boundary diffusion. In particular, it examines the various approximations that have been used to calculate solute concentration from the equation provided by Whipple. Included are approximations intended to permit the determination of grain boundary diffusivities from experimental data. An algorithm is presented which avoids these approximations. It is demonstrated that the algorithm is robust in the face of moderate experimental error, and, unlike an alternative, can be used to minimize the impact of that error. © 1997 American Institute of Physics.
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and implementation of a pressure cell for the study of hydrothermal reactions by in situ energy dispersive x-ray diffraction is described. The cell permits the study of both the kinetics and mechanism of formation of a wide range of important solid-state compounds such as zeolites and other microporous solids. Reactions can be studied over a wide range of temperature (5–230 °C) and autogenous pressure [0–400 psi (gauge)] conditions. The use of this apparatus is illustrated by a study on the synthesis of a microporous tin chalcogenide phase performed on Station 9.7 of the UK Synchrotron Radiation Source. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1337-1339 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O thin-film capacitors have been grown in various oxygen ambients by pulsed laser deposition. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. PLZT capacitors cooled in a fully oxidizing atmosphere (i.e., 1 atm oxygen pressure) exhibited nominally symmetric hysteresis loops and also showed little imprint both with and without fully saturating bias fields. We find that ambient oxygen pressure is an important process parameter and the imprint behavior is closely related with ambient oxygen induced effects such as oxygen vacancies, its related defect-dipole complexes and trapping of free charges. The different imprint behavior under negative and positive bias also suggests that the dipolar-defect complexes tend to cause imprint in PLZT capacitors. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 866-868 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O3 capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 484-486 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cooling (Pb,La)(Zr,Ti)O3 films from their pulsed laser deposition temperature in a reducing ambient yields a voltage offset in the polarization–voltage characteristics. Reversing the as-processed polarization at 120 °C nearly removes the offset. By reversing the polarization at room temperature and either heating the film at zero voltage or illuminating the film with UV light, the offset can be partially changed. All changes are recoverable using the same processes with opposite polarity polarization. This behavior is explained by a process-induced accumulation of oxygen vacancies at one interface, oxygen vacancy defect-dipole complexes throughout the film, and trapping of free electrons at the interface of positive polarization. Voltage offset and shift effects are not observed in films cooled in 1 atm of oxygen © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1892-1894 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model describing the temperature dependence of the threshold current of 1.3 μm gain-coupled distributed feedback (DFB) lasers with periodically etched strained-layer quantum wells is presented and compared to experimental results. The model can predict the minimum threshold current as a function of temperature (infinite T0), which has been observed experimentally. The mechanism for the appearance of this minimum is explained by the decrease of the detuning of the DFB-mode wavelength from the material gain-peak wavelength as the temperature increases. The condition for single-mode operation is also discussed with use of the effective gain of DFB laser structures. © 1996 American Institute of Physics.
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