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  • American Institute of Physics (AIP)  (37)
  • Wiley-Blackwell  (26)
  • 2020-2024
  • 2010-2014  (5)
  • 2005-2009
  • 1990-1994  (53)
  • 1980-1984  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Development of domain refined grain-oriented silicon steel by grooving : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6609-6611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently a heat-proof magnetic domain refining technique has been developed which is characterized by the introduction of grooves on a surface of steel sheet after final cold rolling. In this paper, magnetic properties and the domain refining effect of grooving are investigated. A grooving process is constituted by resist printing on the surface of steel sheets after final cold rolling and succeeding electrolytic etching. The grooves were introduced almost perpendicular to the rolling direction of steel sheets. The width and depth of each grove are about 200 and 20 μm, respectively. With this newly developed method, about 10% reduction in iron loss was achieved and less than 0.34 W/lb at 1.5 T, 60 Hz was obtained. Using this new material, the iron loss of wound core transformers can be reduced by about 10% as compared with nongrooved material. Domain width was dramatically reduced by grooving, which caused the reduction of eddy current loss. This reduction is considered to be caused by the demagnetizing field effect due to free poles in the vicinity of grooves. It was clarified that in grooved sheets the magnetization on the ungrooved surfaces proceeded faster than on the grooved surfaces and therefore, hysteresis loss and magnetizing characteristics did not deteriorate by grooving.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352526
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of YIG fine particles by mist pyrolysis : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5912-5914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttrium iron garnet single crystal fine particles were synthesized by mist pyrolysis from an aqueous solution of yttrium and iron nitrates dissolved in distilled water. Mist was generated by an ultrasonic nebulizer operated at 1 MHz. Thermal decomposition was carried out by passing through the mist in a reaction tube kept a temperature at 800 °C. As-collected particles were spherical, but still amorphous. Fine YIG particles with the average diameter of 0.25 μm were obtained by calcination at 1000 °C for 20 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350104
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  • 3
    Electronic Resource
    Electronic Resource
    Spin-glass-like nature in Fe/DyFe multilayers : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6209-6211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/DyFe multilayers were prepared by radio-frequency magnetron sputtering, where DyFe layers were amorphous and nonmagnetic at room temperature. When the Fe layer thickness dFe decreases, the crystallographic structure of the Fe layer changes from body-centered-cubic to amorphous at around 20 A(ring). At this critical thickness, the spontaneous magnetization and the Kerr rotation angle are nearly zero and the magnetization curve does not show hysteresis or saturation indicating its spin-glass-like or superparamagnetic nature. For dFe 〈 20 A(ring), the saturation magnetization and the Kerr rotation angle increase again due to the Fe-rich-DyFe amorphous alloy formed at the vicinity of the layer boundary with decreasing dFe. The perpendicular anisotropy increases with decreasing dFe because of the interfacial anisotropy Ks = 0.62 erg/cm2 in the crystalline region of dFe (approximately-greater-than) 20 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349997
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  • 4
    Electronic Resource
    Electronic Resource
    Recrystallization and magnetic properties of purified 3% silicon steels : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6262-6264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of impurities on the tertiary recrystallization and magnetic properties of the thin (10 to 100 μm) silicon steels was investigated. For purification, the conventional grain oriented silicon steels, which were used as starting materials with a thickness of 0.30 mm were pre-annealed at 1200 °C in a vacuum of 1×10−3 Pa before cold rolling. In sheets without pre-annealing, the tertiary recrystallization was observed after annealing for at least 3 h over 1200 °C in a vacuum. On the other hand, in pre-annealed sheets, the tertiary recrystallization was completed within 10 min at an annealing temperature of 1150 °C in a vacuum. Through recrystallization, B8 increased to 1.95 T. Even in sheets annealed at 1050 °C, the B8 increased with increasing the annealing time, and became 1.95 T after anneals of 2 h. The pre-annealed sheets were also annealed in hydrogen atmosphere. In this case, at annealing temperatures over 1100 °C, the tertiary recrystallization was completed in less than 1 h. Using the purified sheets, silicon steels with B8 over 1.9 T can be obtained by short time and low temperature annealing in either a vacuum or a hydrogen atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349986
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  • 5
    Electronic Resource
    Electronic Resource
    Origin of coercivity in Co/Pt sputtered multilayers : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6047-6049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt multilayers have been prepared by rf magnetron sputtering onto glass substrates with negative bias voltage. For 0-V bias, the film consists of the columns grown perpendicular to the substrate and the convex interfaces between layers. The column boundaries and the convex interfaces act as the pinning center for the domain wall motion resulting in the high perpendicular coercivity, Hc(⊥ ). In the −30-V biased multilayers, the columns are fine and close packed, and thereby the layer interfaces are smooth and sharp. So that Hc(⊥ ) is very small in these multilayers. Higher bias voltage of −70 V causes the obscure interfaces and decreases the anisotropy energy. In the Co/Pt multilayer deposited on 0 V-Pt underlayer, the coercivity Hc(⊥ ) increases with thickness of 0 V-Pt underlayer and reaches 4 kOe at 1000 A(ring) thickness. On the other hand, for −30 to −50-V Pt underlayer, the layer interfaces are smooth and sharp resulting in small Hc(⊥ ). Thus, Hc(⊥ ) is strongly affected by the film morphology such as the column boundaries or the layer interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350041
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  • 6
    Electronic Resource
    Electronic Resource
    Electron–ion recombination rate constants in gaseous and liquid krypton (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2386-2391 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron drift mobilities μe and electron–ion recombination rate constants kr have been measured by the analysis of transient current induced with the irradiation of an x-ray pulse on gaseous or liquid krypton in a cell as a function of external electric field strength. The effects of an external dc electric field on kr up to 12 mTd (1 Td=10−17 V cm2/molecule) in liquid and 63 mTd in gas have been examined. The observed kr values in both liquid and gas phases have been found to be much smaller than those calculated by the reduced Debye equation. The deviation has been compared with recent theoretical studies, leading to the conclusion that recombination in liquid and gaseous krypton is not the usual diffusion-controlled reaction. The kr values in the gas phase increase with an external dc electric field up to a critical electric field strength below which μe values are nearly constant, and above which both kr and μe values descrease with further increase in the electric field for both gaseous and liquid phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463077
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  • 7
    Electronic Resource
    Electronic Resource
    Emission cross sections of excited fragments produced by electron impact on BCl3 (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 8889-8896 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Emission spectra in the 190–600 nm region produced by electron impact on BCl3 have been studied up to 110 eV. Emission cross sections of the B(2s2p2 2D–2p 2P0) and B(3s 2S–2p 2P0) lines and the BCl(A 1Π–X 1Σ+) band are evaluated to be 4.9±1.0, 4.5±0.7, and (1.9±0.3)×10−18 cm2, respectively, at 100 eV. Formation cross sections of these species have been determined from the analysis of their fluorescence decaying curves. Two continuous emissions observed in the 230–380 and 400–580 nm regions are attributed to the BCl@B|2 band. The fluorescence lifetime of BCl*2 in the 300–342 nm region is obtained to be 1.65±0.2 μs, which is nearly independent of the wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462246
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  • 8
    Electronic Resource
    Electronic Resource
    Formulation of molecular integrals over Gaussian functions treatable by both the Laplace and Fourier transforms of spatial operators by using derivative of Fourier-kernel multiplied Gaussians (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3790-3804 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: General recurrence formulas for molecular integrals over Gaussian functions are derived by introducing the derivative of Fourier-kernel multiplied Gaussians (DFGs). The DFG allows us to formulate on the same ground molecular integrals over the Cartesian Gaussians, modified Hermite Gaussians, and the Gaussians multiplied by phase factors exp[ik⋅(r−R)] with spatial operators including any number of both the Laplace and Fourier transforms for one- and two-electron spatial operators. Thus the present formulation has a wider applicability than that given by Obara and Saika [J. Chem. Phys. 89, 1540(1988)], where the basis functions are the Cartesian Gaussians and the spatial operators are those in the Laplace transform with at most one kernel of the Fourier transform. Furthermore the present formulation inherits the characteristic features of the above one, such as being capable of dealing with (1) molecular integrals with both nonrelativistic and relativistic spatial operators, (2) any order of the derivative of these integrals with respect to the function centers, and (3) leading us to the efficient scheme of computing the integrals by virtue of the recursive nature of the formulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459751
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  • 9
    Electronic Resource
    Electronic Resource
    Laser diagnostics of edge plasmas and laser diagnostics of plasmas for industrial applications (invited) : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4913-4919 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In plasma physics, laser diagnostics were first developed to probe the core region of magnetically confined high-temperature plasmas, but the advent of various new lasers has turned out to be useful for edge plasma studies. The recent developments of various arc and glow discharges for industrial plasma applications have required measurement of the same quantities as in the edge plasma studies and expertise in the latter has been fully exploited for the former. The experience thus gained has then been used for the advantage in the studies of edge plasma behavior in high-temperature plasmas. The interplay of these two fields of plasma studies, where laser diagnostics of plasmas (which we call "laser-aided plasma diagnostics'') is extensively used, is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143547
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum atomic force microscope using a pantograph inchworm mechanism (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3524-3529 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh vacuum atomic force microscope (UHV–AFM) with tunneling current detection has been developed. This microscope uses a new type of pantograph inchworm system. The features of the inchworm system are (i) operation of the clamp in normal clamping mode, (ii) an enlargement of the piezo device stroke for clamper stroke, and (iii) compact system for easy use. Our UHV–AFM has (i) six inchworm movements based on the new mechanism, and (ii) a sharp AFM probe whose tip is machined by a focused ion beam fabrication technique. UHV pressure experiments demonstrate that this system provides a contamination-free surface and can observe atomic resolution AFM images of MoS2 and silicon carbide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144277
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