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  • Articles  (397)
  • Other Sources  (12)
  • 2020-2023  (2)
  • 2005-2009  (221)
  • 2000-2004  (162)
  • 1955-1959  (22)
  • 1935-1939  (2)
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  • Books  (2)
  • Articles  (397)
  • Other Sources  (12)
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  • 1
    Publication Date: 2017-04-04
    Description: Chondrules in chondritic meteorites record the earliest stages of formation of the solar system, potentially providing information about the magnitude of early magnetic fields and early physical and chemical conditions. Using first-order reversal curves (FORCs), we map the coercivity distributions and interactions of 32 chondrules from the Allende, Karoonda, and Bjurbole meteorites. Distinctly different distributions and interactions exist for the three meteorites. The coercivity distributions are lognormal shaped, with Bjurbole distributions being bimodal or trimodal. The highest-coercivity mode in the Bjurbole chondrules is derived from tetrataenite, which interacts strongly with the lower-coercivity grains in a manner unlike that seen in terrestrial rocks. Such strong interactions have the potential to bias paleointensity estimates. Moreover, because a significant portion of the coercivity distributions for most of the chondrules is 〈10 mT, low-coercivity magnetic overprints are common. Therefore paleointensities based on the REM method, which rely on ratios of the natural remanent magnetization (NRM) to the saturation isothermal remanent magnetization (IRM) without magnetic cleaning, will probably be biased. The paleointensity bias is found to be about an order of magnitude for most chondrules with low-coercivity overprints. Paleointensity estimates based on a method we call REMc, which uses NRM/IRM ratios after magnetic cleaning, avoid this overprinting bias. Allende chondrules, which are the most pristine and possibly record the paleofield of the early solar system, have a mean REMc paleointensity of 10.4 μT. Karoonda and Bjurbole chondrules, which have experienced some thermal alteration, have REMc paleointensities of 4.6 and 3.2 μT, respectively.
    Description: NSF and INGV
    Description: Published
    Description: B03S90
    Description: 2.2. Laboratorio di paleomagnetismo
    Description: JCR Journal
    Description: reserved
    Keywords: paleomagnetism coercivity ; paleointensity ; magnetic interactions ; meteorite ; Chondrules ; FORC diagrams ; 01. Atmosphere::01.03. Magnetosphere::01.03.01. Interplanetary physics
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 2
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
    Publication Date: 2022-04-01
    Description: Observations by the Magnetospheric Multiscale spacecraft (MMS) of an unusual layer, located between the dayside magnetosheath and the magnetosphere, alternating with encounters with the magnetosheath during an extended time period between December 31, 2015 and January 01, 2016, when the interplanetary magnetic field was strongly southward and the Earth's dipole tilt large and negative, are presented. It appears to have been magnetically connected to both magnetosphere and magnetosheath. The layer appears to be located mostly on closed field lines and was bounded by a rotational discontinuity (RD) at its magnetosheath edge and by the magnetosphere on its earthward side. A separatrix layer, with heated magnetosheath electrons streaming unidirectionally along the field lines, was present sunward of the RD. We infer that the layer was started by a dominant reconnection site well north of the spacecraft and that it may have gained additional width, from a large drop in solar wind density and ram pressure, which preceded the beginning of the event by more than an hour. Relative to the magnetosheath, in which the magnetic field was strongly southward, this unusual layer was characterized by a less southward, more dawnward magnetic field of lower magnitude. The plasma density and flow speed in the region were lower than in the magnetosheath, albeit with Alfvénic jetting occurring at the magnetosheath edge as well as at the magnetospheric edge of the layer. The closing of the magnetic field lines requires the existence of another reconnection site, located southward/tailward of MMS.
    Description: Key Points: Magnetopause encounter for strongly southward interplanetary magnetic field, low solar wind Alfvén Mach number, and large dipole tilt. Persistent and broad magnetopause layer with magnetospheric O+ and heated magnetosheath plasma. Inferred dominant reconnection site near northern cusp, far from the Magnetospheric Multiscale spacecraft location.
    Description: MPE
    Description: NASA http://dx.doi.org/10.13039/100000104
    Description: Norwegian Research Council http://dx.doi.org/10.13039/501100005416
    Keywords: ddc:538.7
    Language: English
    Type: doc-type:article
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 28 (1956), S. 945-949 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 420-426 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK; Malden, USA : Blackwell Publishing Ltd/Inc.
    Journal of business finance & accounting 31 (2004), S. 0 
    ISSN: 1468-5957
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Abstract:  This paper examines investors’ anticipation and subsequent interpretations of asset write-downs accompanying segment divestitures. Examining long-window returns cumulated over the two years preceding the year of divestiture, we hypothesize and find that investors anticipate write-downs of segment operating assets before divestiture and recognition occurs, with anticipation conditional on the timeliness of the write-down and prior disclosure of the segments’ operating results under segment reporting rules. Short-window returns cumulated over the three days surrounding the announcement of the divestiture confirm that investor interpretations of asset write-downs are similarly contingent on write-down timeliness and prior disclosure.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4034-4036 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. P-channel MOSFETs, with the presence of a single stacking fault entirely in the channel region, were measured. The influence of a single stacking fault on device current–voltage characteristics was determined and compared to that of nearby identical devices without stacking faults. It was found that the threshold voltage increased and saturation current decreased, but had low subthreshold leakages. P-channel MOSFETs, with a single stacking fault crossing the gate and penetrating into the source and drain, had high subthreshold leakage currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 49 (1957), S. 1255-1258 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 51 (1959), S. 1377-1378 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 6 (1958), S. 853-855 
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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