Publication Date:
2013-08-31
Description:
Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.
Keywords:
INSTRUMENTATION AND PHOTOGRAPHY
Type:
NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop; p 5-2
Format:
application/pdf
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