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Stressed Ge:Ga photoconductors for space-based astronomy. (Is there life beyond 120 micron)Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.
Document ID
19900011999
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Beeman, J. W. (California Univ. Berkeley. Lawrence Berkeley Lab., United States)
Haller, E. E. (California Univ. Berkeley. Lawrence Berkeley Lab., United States)
Hansen, W. L. (California Univ. Berkeley. Lawrence Berkeley Lab., United States)
Luke, P. N. (California Univ. Berkeley. Lawrence Berkeley Lab., United States)
Richards, P. L. (California Univ. Berkeley., United States)
Date Acquired
September 6, 2013
Publication Date
October 1, 1989
Publication Information
Publication: NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop
Subject Category
Instrumentation And Photography
Accession Number
90N21315
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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