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  • 2020-2023  (1)
  • 2020-2022  (32)
  • 1990-1994  (149)
  • 1930-1934  (2)
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  • 1
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    Hemolin: an insect-immune protein belonging to the immunoglobulin superfamily (1990)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1990-12-21
    Description: Insects have an efficient defense system against infections. Their antibacterial immune proteins have been well characterized. However, the molecular mechanisms by which insects recognize foreignness are not yet known. Data are presented showing that hemolin (previously named P4), a bacteria-inducible hemolymph protein of the giant silk moth Hyalophora cecropia, belongs to the immunoglobulin superfamily. Functional analyses indicate that hemolin is one of the first hemolymph components to bind to the bacterial surface, taking part in a protein complex formation that is likely to initiate the immune response.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Sun, S C -- Lindstrom, I -- Boman, H G -- Faye, I -- Schmidt, O -- New York, N.Y. -- Science. 1990 Dec 21;250(4988):1729-32.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Microbiology, University of Stockholm, Sweden.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2270488" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Animals ; Base Sequence ; DNA/genetics ; *Genes, Immunoglobulin ; Hemolymph/immunology ; Immunoglobulins ; Insect Proteins ; Molecular Sequence Data ; Moths/genetics/*immunology ; *Multigene Family ; Proteins/*genetics ; Sequence Homology, Nucleic Acid
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    NF-kappa B controls expression of inhibitor I kappa B alpha: evidence for an inducible autoregulatory pathway (1993)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1993-03-26
    Description: The eukaryotic transcription factor nuclear factor-kappa B (NF-kappa B) participates in many parts of the genetic program mediating T lymphocyte activation and growth. Nuclear expression of NF-kappa B occurs after its induced dissociation from its cytoplasmic inhibitor I kappa B alpha. Phorbol ester and tumor necrosis factor-alpha induction of nuclear NF-kappa B is associated with both the degradation of performed I kappa B alpha and the activation of I kappa B alpha gene expression. Transfection studies indicate that the I kappa B alpha gene is specifically induced by the 65-kilodalton transactivating subunit of NF-kappa B. Association of the newly synthesized I kappa B alpha with p65 restores intracellular inhibition of NF-kappa B DNA binding activity and prolongs the survival of this labile inhibitor. Together, these results show that NF-kappa B controls the expression of I kappa B alpha by means of an inducible autoregulatory pathway.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Sun, S C -- Ganchi, P A -- Ballard, D W -- Greene, W C -- 5T32CA09111/CA/NCI NIH HHS/ -- New York, N.Y. -- Science. 1993 Mar 26;259(5103):1912-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Gladstone Institute of Virology and Immunology, University of California, San Francisco.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8096091" target="_blank"〉PubMed〈/a〉
    Keywords: CD4-Positive T-Lymphocytes/metabolism ; Cell Line ; Cell Nucleus/metabolism ; Cycloheximide/pharmacology ; Cytoplasm/metabolism ; DNA/metabolism ; DNA-Binding Proteins/*genetics ; *Gene Expression Regulation ; Humans ; *I-kappa B Proteins ; Immunoblotting ; Kinetics ; Molecular Weight ; Mutagenesis ; NF-kappa B/*antagonists & inhibitors/genetics/*physiology ; RNA, Messenger/biosynthesis ; Tetradecanoylphorbol Acetate/pharmacology ; Trans-Activators/pharmacology ; Transfection ; Tumor Necrosis Factor-alpha/pharmacology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Band-gap renormalization effects on 980 nm strained-layer InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7648-7650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the optical gain and threshold current density of strained-layer InGaAs/AlGaAs quantum-well lasers with the band-gap renormalization effects taken into account. It is found that the band-gap renormalization shifts the lasing wavelength as much as 30 nm which is much larger than the allowed bandwidths, ±6 nm, of 980 nm Er-doped optical fiber amplifiers. We also try to optimize the graded-index separate-confinement-heterostructure optical waveguide layer in order to maximize the optical confinement factor and to reduce its fabrication dependence. The threshold current densities are calculated for the optimized structures for which the gain peak positions are predicted to be within the allowed bandwidths of 980 nm. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357938
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of GaN thin films grown on (0001) Al2O3, (011¯2) Al2O3 and (0001)Si 6H-SiC substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 236-241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of GaN were grown on (0001), (011¯2) Al2O3 and (0001)Si 6H-SiC substrates using an atmospheric pressure metalorganic chemical-vapor-deposition reactor. The relationship has been studied between the thermal stability of the GaN films and the substrate's surface polarity. It appeared that the N-terminated (0001) GaN surface grown on (0001)Si 6H-SiC has the most stable surface, followed by the nonpolar (112¯0) GaN surface grown on (011¯2) Al2O3, while the Ga-terminated (0001) GaN surface grown on (0001) Al2O3 has the least stable surface. This is explained with the difference in the atomic configuration of each of these surfaces which induces a difference in their thermal decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357133
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  • 5
    Electronic Resource
    Electronic Resource
    Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4515-4519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00⋅1)Al2O3 have a better epilayer-substrate interface quality than those grown on (01⋅2)Al2O3. We also show the epilayer grown on (00⋅1)Al2O3 are gallium-terminated, and both (00⋅1) and (01⋅2) surfaces of sapphire crystals are oxygen-terminated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355943
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  • 6
    Electronic Resource
    Electronic Resource
    A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3964-3967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality thin aluminum nitride films were grown on different orientations of sapphire substrates by metalorganic chemical vapor deposition. (00⋅1) AlN thin film grown on (00⋅1) Al2O3 has better crystallinity than (11⋅0) AlN on (01⋅2) sapphire. Full width at half maximum of a rocking curve is 97.2 arcsec, which is the narrowest value to our knowledge. A crystallographic model between AlN thin films and sapphire substrates was proposed to explain the process of crystal growth. "Extended atomic distance mismatch'' which is the mismatch of atomic distance for a longer period was introduced. It is shown that the mismatch is relaxed by edge-type dislocations. Extended atomic distance mismatch was used to interpret the results that (00⋅1) AlN has better crystallinity than (11⋅0) AlN, but (11⋅0) GaN has better crystallinity than (00⋅1) GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356017
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  • 7
    Electronic Resource
    Electronic Resource
    Calculations of the Activation Energies of Some Reactions between the Halogens and the Ethylene Double Bond (1934)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 56 (1934), S. 1096-1101 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01320a027
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of electron velocity overshoot in AlxGa1−xAs/GaAs heterostructure insulated-gate field-effect transistors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factor γ=1+(RS+RD)/Rds is suggested to modify the expression of effective electron velocity in field-effect transistors (FETs), where RS and RD are the source and drain resistances, respectively, and Rds is the intrinsic drain-to-source resistance. Based on this modified expression ν'eff = 2πLfTγ, where L is the gate length and fT is the cut-off frequency, velocity overshoots were observed clearly at room temperature in AlxGa1−xAs/GaAs heterostructure insulated-gate FETs with both undoped and doped channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103622
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  • 9
    Electronic Resource
    Electronic Resource
    Femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 96-98 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first investigation of femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers using a multiple-wavelength pump probe technique. Studies demonstrate that carrier temperature changes from free-carrier absorption and stimulated transitions strongly govern transient gain dynamics. The energy of the pump wavelength relative to the transparency point determines which processes dominate the transient response. Stimulated carrier cooling is observed for the first time in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109709
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  • 10
    Electronic Resource
    Electronic Resource
    Femtosecond time division interferometry technique for measuring the tensor components of χ(3) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 533-535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new femtosecond time division interferometry technique for characterizing nonlinear index changes from different components of the χ(3) tensor. Pump probe interferometric measurements of nonlinear phase are performed using a time division multiplexed reference pulse. The n2(parallel) and n2⊥ components of the nonlinear index are measured by permuting the polarizations of the pulses and using a novel differential detection and modulation scheme. Measurements are demonstrated in an optical fiber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106598
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