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  • 1
    Electronic Resource
    Electronic Resource
    Growth of GaAs on GaAs-coated Si by liquid-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1075-1079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The liquid-phase-epitaxial growth of GaAs on partially masked GaAs-coated Si substrates prepared by molecular-beam epitaxy is described. Uniform layers were obtained in stripe windows narrower than 20 μm at an optimum growth temperatures of 800 °C. Smaller supercooling, however, resulted in smoother surface morphologies. The growth can be explained in terms of the mass transport of the growing species from bulk of the melt to the substrate surface and the subsequent incorporations into the solid. A marked difference between the growth on GaAs-coated Si and that on GaAs substrates was observed. The growth on GaAs substrates appears to be dominated by surface reaction while transport processes are the limiting factor on GaAs-coated Si. The migration length of the growing species was estimated to be very short on GaAs substrates and about 15 μm on GaAs-coated Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340010
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4578-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335363
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  • 3
    Electronic Resource
    Electronic Resource
    Selective liquid-phase electroepitaxy of GaAs on GaAs-coated Si substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4899-4902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaAs on GaAs-coated Si substrate is performed by liquid phase electroepitaxy (LPEE) in which dc current flows from the substrate to the melt in the conventional liquid-phase epitaxy. The GaAs on Si substrate is prepared by metallorganic chemical vapor deposition. The lateral overgrowth on the mask is obtained in the LPEE. The selective LPEE growth mechanism is discussed. The growing species falling on the mask is pulled into the window region by electromigration resulting in the lateral growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349034
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2435-2437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100)Si substrates misoriented 4° toward the [110] direction. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 1×107 cm−2, over ten times lower than those of normal two-step MBE-grown or in situ annealed layers. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100212
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1586-1587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-heterostructure optical waveguide at 1.3 μm wavelength in GaAs/AlGaAs, grown on Si by molecular beam epitaxy, is demonstrated. 6-μm-wide ridge waveguides with 0.25 μm ridge height had single modes and the measured average propagation loss was 11.7 dB/cm. The principal loss was mainly due to the relatively large free-carrier concentration in the guiding layer. It is expected that lower free-carrier concentration (∼1015 cm−3) will lead to waveguides with propagation loss of less than 3 dB/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99920
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  • 6
    Electronic Resource
    Electronic Resource
    Al0.3Ga0.7As/Al0.05Ga0.95As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1201-1203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.3Ga0.7As/Al0.05Ga0.95As double-heterostructure light-emitting diodes (LED's) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LED's had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 3.3×10−3 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LED's fabricated on the GaAs substrates by liquid phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100019
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  • 7
    Electronic Resource
    Electronic Resource
    Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs-coated silicon by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1913-1915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the first successful liquid phase epitaxial (LPE) growth of GaAs on GaAs-coated Si grown by molecular beam epitaxy (MBE). The LPE growth was found to be strongly dependent on the width of the oxide stripe window which defined the area of the sample that was accessible to the LPE melt. Uniform single-crystal layers of GaAs were obtained when the stripe was narrower than 20 μm; in contrast, meltback of the GaAs layers was observed in larger stripes. The minimum dislocation density of the LPE layer that was determined from cross-sectional transmission electron microscopy was about 2–5×106 cm−2. This value was about two orders of magnitude lower than the dislocation density that was observed in the MBE GaAs-on-Si layer which served as a substrate for the LPE growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98298
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  • 8
    Electronic Resource
    Electronic Resource
    New method to relax thermal stress in GaAs grown on Si substrates (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to grow stress-free GaAs on bent Si substrates is proposed and demonstrated by metalorganic chemical vapor deposition. The stress produced by the thermal expansion coefficient difference of Si and GaAs is compensated by the external mechanical strain applied in the substrate at high temperature. The photoluminescence peak energy of GaAs on Si becomes almost the same as that of the stress-free GaAs on GaAs grown by liquid phase epitaxy by applying this method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98794
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  • 9
    Electronic Resource
    Electronic Resource
    Dislocation reduction in the annealed undercut GaAs on Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1480-1482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocations in the undercut GaAs on Si (UCGAS) was investigated by the cross-sectional transmission electron microscope. The UCGAS structure was fabricated by first growing Al0.7Ga0.3As and GaAs on Si substrate and then partially etching the Al0.7Ga0.3As layer in the lateral direction. No dislocation was found in the annealed UCGAS at 800 °C for 10 min, while dislocations were observed in the region where the GaAs layer was connected to the Si substrate. The dislocation reduction mechanism in the UCGAS was also discussed in this letter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107277
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence-dark-spot-free AlGaAs grown on Si substrate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1354-1356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and AlGaAs are grown on an UCGAS (undercut GaAs on Si) in which a part of the GaAs layer grown on Si substrate is separated from the substrate by the post-growth processing. The grown layers are characterized by the high-magnification (×1600) photoluminescence image which is capable of visualizing the very small (less than 1 μm) dark spots in the AlGaAs layer. No dark spot is found in the layer grown on the UCGAS. A planar AlGaAs on Si, on the other hand, has the dark-spot density (DSD) of more than 108 cm−2. The DSDs of the layers grown on planar GaAs on Si and on the mesa are more than 108 cm−2 and in the order of 107 cm−2, respectively. The dark-spot-free region exactly corresponds to the UCGAS part, showing that the UCGAS is quite effective to eliminate the defects in AlGaAs on Si. The two factors, the reduced stress and the absence of the GaAs/Si interface in the UCGAS, are thought to be responsible for this improvement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107315
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