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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371369
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance mapping of InAlAs Schottky diode layer on InAlAs/InGaAs high electron mobility transistor wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 374-379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniformity of surface layer characteristics of InAlAs Schottky diodes, the so-called level-shift diodes, on InAlAs/InGaAs high electron mobility transistors is noninvasively examined by photoreflectance (PR) spectroscopy, on-wafer mapping of PR signal intensity at a particular wavelength, and analyzed data. From the observed Franz–Keldysh oscillations, we have been able to evaluate the built-in dc electric fields in the i–n+, or so-called UN+, InAlAs Schottky diode layer. The on-wafer fluctuation of the electric fields in the diode layer, which is due to the fluctuation of the thickness of the diode layer, is clearly visualized by on-wafer mapping. Nonuniform composition of the InAlAs diode layers is also observed. The shape of the contour lines in the map of the PR signal intensity is related to the structure of the growth equipment. Our results suggest that photoreflectance mapping is quite effective for noninvasive screening of device epiwafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370741
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral migration of point defects in Si induced by localized ion implantation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2663-2665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel experimental approach to investigate lateral migration of point defects in Si induced by ion implantation has been proposed. The point defects induced by localized irradiation using a focused Si ion beam with an energy of 60 keV were monitored by deep level transient spectroscopy while changing the separation among a number of line-shaped irradiated regions. A result of the experiment that the defect formation is suppressed at a smaller separation is explained by the lateral migration of self-interstitials and annihilation with vacancy-type defects. The migration distance of the interstitials is also evaluated quantitatively and discussed in comparison with the trap-limited-diffusion model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123931
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1535-1537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level intensities for Si 2p, Si 2s, O 1s, and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124747
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  • 5
    Electronic Resource
    Electronic Resource
    Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1568-1570 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the characteristics of p-type SiGeC layers for possible application to source/drain regions of sub-100 nm metal–oxide–semiconductor field-effect transistors. We synthesized the SiGeC layer by the high-dose ion implantation of Ge and C into Si substrate and subsequent annealing. We succeeded in fabricating shallow p+/n junctions by the incorporation of C, of which the peak concentration is more than 1%. B diffusion in this layer was significantly suppressed, and the depth profile of B was reproduced with a process simulation in which a diffusion coefficient much lower than the reported value was assumed. This should be attributed to decreased Si interstitials. We examined the sheet resistance and contact resistance of the SiGeC layer, and found that the increase in resistance is tolerable as compared with a SiGe layer. This is because the carrier deactivation by the incorporation of C was not serious, which was confirmed by the spreading resistance measurement. The junction leakage in the p+/n diode was reduced with the increase in the concentration of C. Hence, SiGeC is a promising material for use in shallow and low resistance p+/n junctions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124757
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  • 6
    Electronic Resource
    Electronic Resource
    Discrimination of product isomers in the photodissociation of propyne and allene at 193 nm (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 4363-4368 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation dynamics of propyne and allene are investigated in two molecular beam/photodissociation instruments, one using electron impact ionization and the other using tunable vacuum ultraviolet (VUV) light to photoionize the photoproducts. The primary dissociation channels for both reactants are C3H3+H and C3H2+H2. Measurement of the photoionization efficiency curves on the VUV instrument shows that the C3H3 product from propyne is the propynyl (CH3CC) radical, whereas the C3H3 product from allene is the propargyl (CH2CCH) radical. The dominant C3H2 product from both reactants is the propadienylidene (H2CCC) radical. We also observe a small amount of secondary C3H2 product from photodissociation of the C3H3 radicals in both cases. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478318
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  • 7
    Electronic Resource
    Electronic Resource
    Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7380-7384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational modes of the β-Si3N4 Raman active bands appearing in the wave number region between 110 and 1100 cm−1 were determined by the polarization and the crystallographic orientation dependence of the Raman intensities of the bands using micro-Raman spectroscopy. The laser beam was focused onto a single grain with the shape of a regular hexagon or elongated hexagon on the sintered ceramic plate. The three intense bands appearing at about 185, 208, and 230 cm−1 were attributed to the vibrational modes of E2g, Ag, and E1g, respectively. The remaining peaks were also assigned to the irreducible representations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369366
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