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  • Articles  (41)
  • American Institute of Physics (AIP)  (21)
  • National Academy of Sciences  (20)
  • Frontiers Media
  • 2020-2022
  • 2015-2019
  • 1995-1999  (41)
  • 1999  (41)
Collection
  • Articles  (41)
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Publisher
Years
  • 2020-2022
  • 2015-2019
  • 1995-1999  (41)
Year
Journal
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  • 1
    Electronic Resource
    Electronic Resource
    Model of magnetorheological elastomers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3348-3351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetorheological elastomers consist of natural or synthetic rubber filled with micron-sized magnetizable particles. During curing of the elastomer, an applied magnetic field aligns the particles into chains. The shear modulus of the resulting cured material is sensitive to magnetic fields of several kOe magnitude. Such sensitivity to magnetic field makes these materials attractive for applications in automotive mounting components. At large fields (magnetic induction B〉1 T), the Fe particles are completely magnetized or saturated. Calculations using finite element analysis show that for typical elastomers the increase in shear modulus due to interparticle magnetic forces at saturation is about 50% of the zero-field modulus. The optimum particle volume fraction for the largest fractional change in modulus at saturation is predicted to be 27%. Calculations of the zero-field shear modulus perpendicular to the chain axis indicate that it does not exceed the modulus of a filled elastomer with randomly dispersed particles of the same concentration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369682
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  • 2
    Electronic Resource
    Electronic Resource
    Spreading and imbibition of viscous liquid on a porous base (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 48-57 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The competition between the viscous spreading of liquid on a substrate and the absorption by the substrate is studied using several models. The local behaviors near the contact lines, the time scales of droplet spreading and disappearance, and the dependencies on the physical factors that enter are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869901
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  • 3
    Electronic Resource
    Electronic Resource
    Buoyancy-driven viscous interaction of a rising drop with a smaller trailing drop (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1016-1028 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An axisymmetric boundary-integral method was developed and used to study the interaction of two deformable drops (or bubbles) rising (or settling) due to gravity in a viscous medium under conditions of small Reynolds number. The focus is on cases where the smaller drop trails behind the larger drop. When the Bond number is small, interfacial tension keeps the drops nearly spherical, and they separate with time. At higher Bond numbers, however, deformation is significant and the trailing drop is stretched due to the flow created by the leading drop; it may form one or more necks and break when one of these pinches off. The leading drop is flattened due to the flow created by the trailing drop; it may form a depression on its underside which evolves into a plume that rises through its center. Moreover, at sufficiently high Bond numbers, the larger leading drop does not leave the trailing drop behind, but instead may entrain and engulf it within the depression or plume. Systematic results for the parameter ranges which demarcate impending breakup and coalescence are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869973
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  • 4
    Electronic Resource
    Electronic Resource
    Switching of self-organized patterns in mutually modulating liquid crystal devices for beam control (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3399-3405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optical circuit for beam pointing using self-organized roll patterns is proposed and demonstrated. The circuit contains two mutually coupled spatial light modulators (SLMs). It is shown that abrupt beam switching can be realized by changing a bias voltage applied to the liquid crystal layer of one of the SLM. The pattern forming and beam switching mechanism is explained using a theoretical model which includes the effects of diffraction, feedback displacement, and nonlinearity of the SLM. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369696
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  • 5
    Electronic Resource
    Electronic Resource
    Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3535-3539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a study of the quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN which originate from the interaction of phonons belonging to the A1 and E1 symmetry groups. In order to analyze the allowed quasi as well as pure Raman modes, the modes were observed in a rotating crystallographic coordinate system, and the Raman tensors of the wurtzite crystal structure were calculated as a function of the crystallographic rotation. The frequencies of the quasimodes of wurtzite AlN were also analyzed in terms of the interaction of the polar phonons with the long range electrostatic field model. The experimental values of the Raman frequencies of the quasiphonons concur with these expected from the model, implying that the long range electrostatic field dominates the short range forces for polar phonons in AlN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369712
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2492-2494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reduction in the dislocation density of 104–105 cm−2 has been achieved via lateral epitaxial overgrowth (LEO) of GaN films selectively grown from stripes etched in SiO2 masks deposited on GaN/AlN/6H–SiC(0001) heterostructures. The magnitudes and distribution of stresses generated in the LEO GaN layer and the SiO2, due primarily to differences in the coefficients of thermal expansion, were modeled using finite element (FE) analysis. These calculations showed that localized compressive stress fields of (approximate)3 GPa occurred at the edges of the LEO GaN in the vicinity of the GaN/SiO2 interface. Localized compression along the GaN substrate/SiO2 interface and tension along the 〈0001〉 direction were responsible for the change in shape of the SiO2 stripes from rectangular with flat sides to an airfoil shape with curved sides. The FE calculations also revealed that an increase in the width of the LEO GaN regions over the SiO2 or the reduction in the separation between the GaN stripes (all other dimensions being fixed) resulted in a slight reduction in the compressive stresses along the LEO GaN/SiO2 interface and an increase in the compressive stress along [0001]. An increase in the shear stress, at the corners of the LEO GaN near the LEO GaN/SiO2 interface, with an increase in the width of the LEO GaN region were also indicated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123017
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  • 7
    Electronic Resource
    Electronic Resource
    Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001¯), and (11¯00) 2H–AlN/6H–SiC interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371391
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  • 8
    Electronic Resource
    Electronic Resource
    Rotatable source crossed molecular beams apparatus with pulsed ultraviolet/vacuum ultraviolet photoionization detection (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2606-2614 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A newly constructed universal crossed molecular beams apparatus for studies of bimolecular chemical reaction dynamics is described. The apparatus employs two rotatable molecular beam sources and a fixed ultrahigh vacuum (UHV) quadrupole mass spectrometer with electron impact or pulsed photoionization of reaction products. Electronically cold neutral supersonic transition metal atomic beams are produced in one of the rotatable sources using laser vaporization. The beams are characterized by laser induced fluorescence spectroscopy, photodepletion spectroscopy, and time-of-flight analysis. Photoionization of the ZrC2H2 products from the crossed beam reaction Zr+C2H4→ZrC2H2+H2 is carried out using the pulsed 157 nm radiation from a F2 excimer laser in the UHV region of the mass spectrometer. Compared to conventional electron impact ionization, 157 nm photoionization improves signal-to-noise ratios by more than two orders of magnitude for experiments using pulsed beam sources where cross correlation methods cannot be used. We also demonstrate the use of 1+1 resonance enhanced multiphoton ionization for state selective detection of nonreactively scattered transition metal atoms from decay of long-lived collision complexes. Due to the small reaction cross sections for Y+C2H6→YC2H4+H2 and Y+CD3CDO→DYCD3+CO, these reactions could not be studied using electron impact ionization. However, photoionization detection permitted direct studies of the reactions with excellent signal-to-noise ratios. The greatly improved sensitivity of the photoionization technique facilitates studies of transition metal systems not previously amenable to the crossed beams method. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149817
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  • 9
    Electronic Resource
    Electronic Resource
    3He refrigerator based very low temperature scanning tunneling microscope (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1459-1463 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design and development of a scanning tunneling microscope (STM) which can operate at temperatures down to 240 mK and in magnetic fields up to 7 T with high spatial and energy resolution. The compact and rigid STM head is mounted directly on a low vibration, single shot, 3He refrigerator. This refrigerator can be operated at its base temperature continuously for several days before the 3He needs to be recondensed. The system is equipped with a sample transport manipulator from room temperature, and a cleavage device at low temperature, so that the cryogenic ultrahigh vacuum condition inside the cryostat can be utilized. A superconducting magnet provides a magnetic field of up to 7 T at the sample along the STM tip direction. Test results have shown that, at the base temperature, this instrument has better than 0.5 pm z-direction resolution in imaging mode, and better than 20 μV energy resolution in spectroscopy mode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149605
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  • 10
    Electronic Resource
    Electronic Resource
    Pendeoepitaxy of gallium nitride thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 196-198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (112¯0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (112¯0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124317
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