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  • American Institute of Physics (AIP)  (2)
  • Springer  (1)
  • Institute of Electrical and Electronics Engineers
  • 1995-1999  (3)
  • 1985-1989
  • 1975-1979
  • 1998  (3)
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Publisher
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  • 1995-1999  (3)
  • 1985-1989
  • 1975-1979
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2436-2438 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2820-2822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reveal the intrinsic Josephson effect in a La2−xSrxCuO4 (LSCO) high-Tc superconductor. Nb counterelectrodes are deposited on top of mesas, which are formed on surfaces either parallel or perpendicular to the ab plane of LSCO single crystals. Nb/LSCO interfaces behave as SNS Josephson junctions. For the junctions parallel to the ab plane, we observe many branches in the current–voltage characteristics due to intrinsic Josephson effects. The voltage gaps between the branches are typically 0.1 mV, which is much smaller than the superconducting energy gap 2Δ≅11 mV expected for LSCO from Bardeen–Cooper–Schrieffer theory. © 1998 American Institute of Physics.
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  • 3
    ISSN: 1572-879X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effects of SiO2/Al2O3 ratio of H-mordenite on the selectivity of encapsulated products in the pores and of bulk products were investigated in the isopropylation of biphenyl. The selectivity of 4,40 -diisopropylbiphenyl (4,40 -DIPB) of bulk products was varied with SiO2/Al2O3 ratio. Highly dealuminated H-mordenite gave a selectivity higher than 80%, whereas the selectivity was low for H-mordenite with SiO2/Al2O3 ratio of 10-20. On the other hand, the selectivity of 4,40 -DIPB in encapsulated DIPB isomers was higher than 85% for all H-mordenites regardless of SiO2/Al2O3 ratio. These results show that all H-mordenites catalyze the isopropylation of biphenyl with high shape-selectivity inside the pore. The low selectivity of 4,40 -DIPB in bulk products for H-mordenites with low SiO2/Al2O3 ratio was not due to a lack of shape-selectivity of the H-mordenites, but to non-regioselective isopropylation at the external acid sites. Non-regioselective catalysis over H-mordenite with low SiO2/Al2O3 ratio could be induced by choking pores by coke deposition.
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