Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 4101-4107
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By applying liquid phase epitaxy, we have grown defect-free silicon and silicon–germanium layers on partially oxide-masked Si wafers. The growth of the layers started epitaxially in oxide-free seeding areas and proceeded laterally over the thermal oxide film. Detailed studies by x-ray topography and electron microscopy show that the obtained thin semiconductor-on-insulator layers bend towards the oxide during lateral growth. The bending of the layers can be ascribed to adhesion and interfacial forces. Adhesion operates across a gap between the closely spaced surfaces of the oxide and the epitaxial Si and facilitates lateral growth of high-quality semiconductor layers on dissimilar layers or substrates. The technical potential of adhesion-dependent solution growth on dissimilar substrates is discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363371
Permalink
|
Location |
Call Number |
Expected |
Availability |