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  • American Chemical Society  (109)
  • Wiley-Blackwell  (47)
  • American Institute of Physics (AIP)  (32)
  • 1995-1999  (188)
  • 1950-1954
  • 1945-1949
  • 1880-1889
  • 1995  (188)
  • 1
    Electronic Resource
    Electronic Resource
    Stimulated Raman backscattering with and without optical fiber smoothing technique in 0.53 μm laser-created plasmas (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2075-2083 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Backward stimulated Raman scattering (SRS) experiments have been performed using the optical fiber smoothing implemented on the high-power Phébus laser facility [Laser Part. Beams 4, 93 (1988)]. The interaction took place in low-Z plasmas presenting either exponential density profiles (solid targets) or Gaussian-type profiles. Raman instability was driven with 1.4 ns duration—0.53 μm laser pulses, containing an energy up to 1.8 kJ. Comparative and absolute measurements of SRS reflectivity are reported as a function of the incident laser intensity, both with and without beam smoothing. Near-backward time-resolved SRS spectra are also presented. Random phase plates are not used in these experiments. With or without smoothing, SRS reflectivities of the order of 10% have been measured. However, smoothing becomes effective in exponential profiles below 1015 W/cm2. Although the optical fiber efficiently reduces the contrast of the energy modulations in the focal spot, the spectral bandwidth may be insufficient to quench SRS development in these conditions. This last assumption is in agreement with theoretical predictions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871294
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  • 2
    Electronic Resource
    Electronic Resource
    2D tomography with bolometry in DIII-Da) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1201-1204 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 48-channel platinum-foil bolometer system on DIII-D was installed to achieve better spatial and temporal resolution of the radiated power in diverted discharges. Two 24-channel arrays provide complete plasma coverage with optimized views of the divertor. The divertor radiation profile was measured for a series of radiative divertor and power balance experiments. A significant change in the magnitude and distribution of divertor radiation with heavy gas puffing was observed. Unfolding the radiation profile with only two views requires one to treat the core and divertor radiation separately. The core radiation is fitted to a function of magnetic flux and is then subtracted from the divertor viewing chords. The divertor profile is then fit to a 2D spline as a function of magnetic flux and distance from divertor floor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146006
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  • 3
    Electronic Resource
    Electronic Resource
    All-in-one spectrometer—A simple experimental setup for measuring transport characteristics in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4985-4988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characterization of semiconductor heterostructures requires different measurement techniques such as photoluminescence, Shubnikov–de Haas, and cyclotron resonance. We present a simple experimental setup which allows to make use of all these techniques without changing the equipment. There is no need for electrical contacts. The performance is demonstrated on InxGa1−xAs/InP quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146120
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  • 4
    Electronic Resource
    Electronic Resource
    2D tomography with bolometry in DIII-D (abstract)a) : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 664-664 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 48-channel platinum-foil bolometer system on DIII-D was installed to achieve better spatial and temporal resolution of the radiated power in diverted discharges. Two 24-channel arrays provide complete plasma coverage with optimized views of the divertor. The divertor radiation profile was measured for a series of radiative divertor and power balance experiments. A significant change in the magnitude and distribution of divertor radiation with heavy gas puffing was observed. Unfolding the radiation profile with only two views requires one to treat the core and divertor radiation separately. The core radiation is fitted to a function of magnetic flux and is then subtracted from the divertor viewing chords. The divertor profile is then fit to a 2D spline as a function of magnetic flux and distance from divertor floor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146253
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  • 5
    Electronic Resource
    Electronic Resource
    Synthesis and Photophysical Properties of Mono(2,2',2''-terpyridine) Complexes of Ruthenium(II) (1995)
    s.l. : American Chemical Society
    Inorganic chemistry 34 (1995), S. 3385-3395 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00117a004
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4975-4981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of Si1−xGex layers epitaxially grown on Si(100) by Ion Beam Sputter Deposition were studied as a function of growth temperature and film thickness. It was shown that the structure of defects strongly depends on the growth temperature, Tg. The dislocations cross grid which is observed at the SiGe/Si interface for layers grown at high (700 °C) Tg is missing in layers grown at low ((approximately-less-than)550 °C) Tg, while a new type of defects parallel to {001} and {113} lattice planes appear at these temperatures. The optimal Tg for a Ge content of 20-25 at. % was found to be close to 550-625 °C. Surface roughness for all the growth temperatures was found to be less than that for such a "smooth'' technique as MBE. Photoluminescence studies revealed, to the best of our knowledge for the first time, two peaks on the low energy side in the neighborhood of the Si(TO) peak of the epilayers. The evolution of the intensity of these peaks is strongly correlated with the dynamics of strain relaxation and can be attributed to a set of dislocations at the SiGe/Si interface extending both to the epilayer and to the bulk Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359788
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth and photopolymerization of diacetylene films on oriented layers of poly(tetrafluoroethylene) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5655-5660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented polydiacetylene thin films were prepared by epitaxial polymerization of vacuum deposited monomer 5,7-dodecadiyne 1,12 diol bis{[(4-butoxy carbonyl) methyl] urethane} (4-BCMU) on friction-transferred poly(tetrafluoroethylene) (PTFE) substrates. Detailed structural and morphological studies were performed using UV-dichroism measurements, optical and transmission electron microscopy, and suggest that 4-BCMU grows epitaxially on PTFE as a result of a near perfect lattice matching. The oriented monomer layer is converted by photopolymerization into a highly oriented polymer layer with a unique poly(4-BCMU)/PTFE chain to chain orientation and a well defined ac contact plane. Annealing of the monomer layer, prior to photopolymerization, is shown to strongly enhance the final degree of ordering of the polydiacetylene thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359208
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  • 8
    Electronic Resource
    Electronic Resource
    Measurements of electromagnetic fields in a planar radio-frequency inductively coupled plasma source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 90-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar radio-frequency inductively coupled plasma source were measured using an inductive loop (B-dot) probe. The probe was oriented to measure the time derivative of the axial component of the magnetic field (B(overdot)z). Using these measurements and Faraday's law, taking advantage of cylindrical symmetry, the time varying azimuthal electric field (Eφ) was calculated directly. Contour plots of B(overdot)z and Eφ in the r-z plane show that the radio-frequency electromagnetic fields penetrate further into the plasma at lower gas pressure and lower rf power, corresponding to less effective shielding of the fields at lower plasma density. Estimates of skin depth from the axial decay of the field amplitudes near the axis of the discharge are consistent with values calculated from plasma parameters measured with Langmuir probes, confirming that near the axis the degree of shielding is most strongly dependent on the local plasma density. Near the conducting walls of the chamber, the skin depth calculations from the Langmuir probe data diverge from the B-dot probe data. B-dot probe measurements taken in the absence of plasma show that near the walls of the chamber the axial decay of the field amplitude is partly a geometrical effect in addition to a plasma shielding effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360585
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  • 9
    Electronic Resource
    Electronic Resource
    Electroluminescence from multilayer organic light-emitting diodes using poly(methylphenylsilane) as hole transporting material (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2684-2690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical and electrical properties of polysilane-based multilayer electroluminescent (EL) devices, utilizing poly(methylphenylsilane) (PMPS) as the hole transporting material, in order to elucidate the mechanism of EL emission in these devices. The EL devices which we fabricated have two or three functional organic layers. These layers are composed of a PMPS layer as well as a 3-(2'-Benzothiazolyl)-7-diethylaminocoumarin (Coumarin 6) doped polystyrene (PS) layer and/or a tris-(8-hydroxyquinoline) aluminum (Alq3) layer. An indium-tin-oxide-coated glass and an Al electrode were used as the hole and the electron injecting electrode, respectively. On the basis of a combined analysis of the basic characteristics of these devices, photoexcited fluorescence spectra and decay curves as well as the band diagram of these devices, we concluded that the recombination of charge carriers and the EL emission in the three-layer device occur both in the Coumarin 6:PS and the evaporated Alq3 layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360063
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  • 10
    Electronic Resource
    Electronic Resource
    Unified particle simulation technique for the plasma bulk and the cathode sheath of a dc glow discharge (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 992-1000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unified particle simulation of the entire glow discharge including plasma bulk and electrode sheaths suffers from the bad representation of particles in the cathode fall and/or from expensive computing time. To improve the efficiency and reliability of such simulations we develop a splitting procedure for the simulation particles that increases the sampling rate in critical phase space regions. The technique is demonstrated with the help of a simplified model of a dc glow discharge. Simulation particles representing ions and electrons are traced from electrode to electrode by moving the particles in self-consistent fields. For comparison, the same model of the discharge is analyzed in the framework of transport equations. To improve the spatial density profiles of the macroscopic equations, we accounted for nonlocal effects by adjusting the Townsend ionization coefficient with the help of the particle simulation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358946
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