Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 4072-4076
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by α-particle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature annealing, including self-annealing at room temperature, of the interstitial carbon Ci with a simultaneous increase of the Ci-Oi-complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci-center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357356
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