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  • Articles  (89)
  • 1995-1999
  • 1990-1994  (89)
  • 1993  (89)
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  • 1995-1999
  • 1990-1994  (89)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion-beam-assisted deposition of ferroelectric PbTiO3 films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354644
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  • 2
    Electronic Resource
    Electronic Resource
    High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1430-1434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature Te of photoexcited carriers in semi-insulating GaAs wafers is determined with high lateral resolution by topographic measurement of the spectrally selected band-to-band recombination luminescence intensity IPL. It is also calculated from a detailed balance between carrier excitation and recombination, taking into account optical phonon, electron-electron, piezoelectric, and acoustic phonon scattering processes. Comparison of the experimental and theoretical Te data yields the lifetime τ of the photoexcited carriers, which is thus obtained without time-resolved measurement. The lifetime results are corroborated by comparison of the measured and calculated dependence of Te on the laser excitation power. The relation between Te and τ for given excitation power allows for the generation of two-dimensional high-resolution lifetime topograms. The correlation with conventional IPL topograms is direct, duplicating the lateral cellular pattern with comparable fluctuation amplitude. From these properties, it is inferred that τ is dominantly determined by inhomogeneously distributed nonradiative recombination centers. Their concentration is low in the walls of the dislocation network and high in the interior of the cells. The statistical evaluation of Te topograms allows for an application-oriented comparison of the quality and homogeneity of GaAs wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353241
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of the ac susceptibility and the spontaneous resistive anisotropy in dilute P(underbar)d(underbar)Fe : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5674-5676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of detailed measurements of the field and temperature dependent ac susceptibility (χac) and the spontaneous resistive anisotropy (SRA) of P(underbar)d(underbar)Fe samples with between 0.35 and 2.4 at. % Fe are summarized. The χac data enable estimates for the critical exponents γ, β, and δ to be made, and in the 1.4 at. % sample these are close to Heisenberg model predictions. In the other samples evidence is found for exchange bond disorder. The SRA results are consistent with this transport coefficient exhibiting critical behavior governed by percolationlike behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353587
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  • 4
    Electronic Resource
    Electronic Resource
    The general treatment of superexchange versus sequential electron transfer in a three-component system (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 979-984 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mechanisms of superexchange vs sequential electron transfer in a three-component system involving reactant, intermediate, and product are investigated by using the Zusman equation. This approach is nonperturbative with regard to the electronic coupling and thus, in principle, the contributions from all higher order terms are included. This treatment allows examination of a wide range of conditions from nondegenerate to degenerate cases, as well as from nonadiabatic to adiabatic cases for electron transfer processes involving three Marcus parabolas such as believed to occur in photosynthetic reaction centers. New effects of superexchange on electron-transfer rate resulting from degenerate energy-level crossings are predicted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465311
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic characterization of the hydrogen bonded OC–HI in supersonic jets (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 1761-1767 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The hydrogen bond OC–HI has been characterized using high resolution microwave and infrared spectroscopies in supersonic seeded molecular jets. Ground state molecular parameters of the 16O12C–HI and 16O13C–HI isotopic species determined by the pulsed-nozzle Fourier transform microwave supersonic jet technique include: for 16O12C–HI, B0 (MHz)=900.9522(1), DJ (kHz)=2.519(1), CN (kHz)=0.94(18), χ(MHz)=−1346.238(13), χJ (kHz)=−8.27(31). The corresponding values for 16O13C–HI are 882.5997(2), 2.404(2), 0.87(19), −1349.481(17), and −7.76(28). This analysis is consistent only with a linear equilibrium dimer structure in which the proton is bound to the carbon atom of carbon monoxide. Other derived dimer parameters include: r(C–I)=4.271(2) A(ring), αav=24.8°, kσ(N m−1)=1.713. Infrared diode laser investigations provide a band origin frequency ν0 of 2148.549 040(29) cm−1 for the ν2 C≡O stretching fundamental vibration. This corresponds to a blue shift of 5.277 28(37) cm−1 relative to free monomer CO. Excited state molecular constants B2=898.2728(33) MHz. and DJ(2)=2.614(24) kHz are also determined. Line profiles are consistent with an excited state lifetime ≥0.54 ns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464264
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  • 6
    Electronic Resource
    Electronic Resource
    Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with the assistance of atomic hydrogen during the in situ growth of Si on GaAs. Si3N4/Si/GaAs capacitors have shown a minimum interface state density as low as 3×1010 eV−1 cm−2 as determined by the low-frequency capacitance method. The hysteresis and frequency dispersion in the GaAs metal-insulator-semiconductor capacitor are very small (200 and 100 meV, respectively). These results represent significant advances over previous reports.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109162
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  • 7
    Electronic Resource
    Electronic Resource
    Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109075
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  • 8
    Electronic Resource
    Electronic Resource
    Resistive transition of Bi(2223) silver clamped thick film (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5108-5111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354297
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  • 9
    Electronic Resource
    Electronic Resource
    Photochemistry of the triplet T2 state of anthracene (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 374-378 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100104a018
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  • 10
    Electronic Resource
    Electronic Resource
    Time-resolved evidence for isomerization of diphenylpolyene cation radicals in solution (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 3324-3327 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100115a038
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