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  • Blackwell Publishing Ltd  (37)
  • American Institute of Physics (AIP)  (36)
  • 2000-2004
  • 1990-1994  (73)
  • 1993  (73)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1831-1834 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new experimental geometry for simultaneously mapping the rocking curves of a sample over a one- or two-dimensional array of points on the sample has been developed. The 422 asymmetric diffraction of Cu Kα1 radiation with a monolithic channel-cut silicon crystal angularly collimates and spatially expands the x-ray beam. A cooled Reticon linear photodiode array with 25-μm spatial resolution was used for the one-dimensional detector. Compared with the commonly used double-crystal diffractometer method, more information can be obtained from the present method, for example, characterization of the minute local misorientation of subgrains and the precise determination of the curvature of a crystal. The uniformity of the crystal quality and the local variation of the curvature of the crystal planes over a sample can also be revealed from the contour map of the rocking curves. Maps of the rocking curves of several samples have been collected using this method.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1524-1529 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A commercially available single photon avalanche photodiode in a passively quenched circuit is used with time-correlated single photon counting modules to achieve subnanosecond time response together with high quantum efficiency and low dark noise. These characteristics are required for experiments in single molecule detection and spectroscopy in which time-gated detection schemes are used. By tightly focusing the input light onto the active area, a quantum efficiency of over 50% and a single photon timing jitter of 168 ps full width at half-maximum are achieved. In addition, the full width at one-hundredth maximum, which is of greater importance for time gating, is 790 ps, comparable to that from a microchannel plate photomultiplier. Measurements of the detector dead time, and the quantum efficiency, dark counts, time response, and pulse height distribution for different operating conditions are also reported.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4494-4499 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sinusoidal wave solution is found for a superconducting asymmetrical parallel-plate transmission line with a buffer layer, by using Maxwell's and London's equations, the two-fluid model, and the classical skin effect for the normal component of the current. Expressions for phase velocity and attenuation coefficient of the wave are derived. Values for the attenuation coefficient are computed for various combinations of material properties, and losses in the buffer layer are discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 680-683 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrorheological (ER) properties of a model system consisting of oxidized metal particles in an insulating oil are analyzed. It is suggested that previous dc experiments on such systems have failed to reveal strong ER activity because of conductivity effects. Recent experiments by Inoue at 50 Hz excitation appear to have nearly obtained the ultimate strength of the metal-particle system studied.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is confirmed that a melt-quenched and annealed blend of 80 wt % polyvinylidene fluoride and 20 wt % polymethylmethacrylate has the β-crystal form of PVDF with optical clarity and other properties that are desirable for a host material in a guest-host system where the guest is an optically nonlinear dye that is orientationally stabilized by the strong internal electric field of a poled ferroelectric. Combined measurements, in such a blend, of the internal electric field Ei, the pyroelectric coefficient Cpyro, and the polarization distribution after electrically poling and subsequently thermally aging for 2 h intervals at temperatures up to 120 °C are reported. Ei and Cpyro increase with increasing poling field Ep. Ei was found to be as large as three times Ep. An unexpected thermal stability of Ei was observed at annealing temperatures above the glass transition temperature of 60 °C up to 100 °C when significant loss of Cpyro was measured. Thermal pulse results yield polarization distributions that may be attributed in part to dipolar polarization and in part to space charge. The prolonged thermal stability of Ei is ascribed to space charge that does not contribute to Cpyro. The poled blend shows second-harmonic generation with a nonlinear coefficient d33 of around 1 pm/V (9×10−9 esu).
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6686-6690 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The p- and n-type doping, with Be and Si, respectively, of InSb grown on InSb and GaAs substrates using molecular-beam epitaxy was investigated. Using secondary-ion-mass spectrometry, an anomalous migration of Be toward the surface was observed for growth on InSb substrates when the substrate temperature exceeded 340 °C. This migration was not observed for Be-doped InSb layers grown on GaAs substrates. This redistribution of dopants was also not observed for Si-doped InSb layers. The doping efficiency of Be in InSb was approximately one-half that measured for Be in GaAs. For the doping efficiency of Si in InSb to reach that for Si in GaAs, the substrate temperature had to be maintained at ≤340 °C during growth. Using the low-temperature growth technique, Si delta-doped structures were grown which demonstrated two-dimensional electron gas behavior.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5972-5980 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly(tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend. The etch rates have been modeled using a two parameter thermal model to describe the etching process. The parameters obtained by fitting the data are qualitatively correlated to the dopant concentration and the measured limiting etch rates.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2672-2677 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a study of amplified spontaneous emission (ASE) in the I2(B→X) system. For many (v',v‘) bands, several J'→J‘ transitions contribute to the ASE in a cooperative manner. We present spectroscopic and kinetic data that contrast this cooperative stimulated emission to the emission in previously reported optically pumped lasers. Transitions that involve several cooperatively emitting levels produce efficient conversion of the pump laser to near-infrared output.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4955-4970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphological instability of a growing epitaxially strained dislocation-free solid film is analyzed. An evolution equation for the film surface is derived in the dilute limit of vacancies based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem the conditions for which a growing film is unstable are determined. It is found that the instability is driven by the lattice mismatch between the film and the substrate; however, low temperatures as well as elastically stiff substrates are stabilizing influences. The results also reveal that the critical film thickness for instability depends on the growth rate of the film itself. Detailed comparison with experimental observations indicates that the instability described exhibits many of the observed features of the onset of the "island instability.''
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2379-2381 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed an extremely low noise constant current power supply. The design was optimized for low noise at 0.5 Hz. For a 134 mA supply, noise at this frequency is 2.5 nA rms/ (square root of)Hz. At 1 Hz, it is 1.0 nA rms/(square root of)Hz. The supply is roughly an order of magnitude quieter than the quietest commercial unit we know of.
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