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  • Springer  (77)
  • American Physical Society  (15)
  • International Union of Crystallography  (14)
  • American Institute of Physics (AIP)  (7)
  • Blackwell Science Ltd
  • 2000-2004
  • 1990-1994  (113)
  • 1935-1939
  • 1993  (113)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1655-1656 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 1076-1094 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Tensor product decompositions of the N=2 superconformal algebras are examined to determine when they are finite or multiplicity-free, using various combinatorial identities. Using similar techniques, branching rules for the winding subalgebras of the N=2 superconformal algebras are investigated.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1248-1250 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p(approximately-greater-than)1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH3 in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N2, then repassivated by heating and re-cooling in an AsH3/H2 or PH3/H2 ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath n-type GaAs. This result is consistent with observations in n-p-n heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH3-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2591-2593 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase locking of CO2 waveguide laser arrays of up to 19 channels has been attained by low-loss coupling in a slab waveguide of Talbot imaging dimensions, within a two-mirror cavity. The technique provides strong channel coupling while maintaining a low laser threshold. A seven channel array phase locked into a single mode by this technique has produced 100 W of output and 10% efficiency, demonstrating the effectiveness of Talbot imaging, when combined with confinement in a slab waveguide.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3880-3885 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the effects of low-temperature (∼540 °C) annealing, with and without an As overpressure, on the native oxide of AlxGa1−xAs formed via water vapor oxidation at elevated temperature (∼425 °C). Auger electron spectroscopy data show the Al to be oxidized while the Ga remains unoxidized after the water vapor oxidation of AlxGa1−xAs. Transmission electron microscopy data show a possible composition or phase change upon annealing with an As overpressure. Electron diffraction data indicate that the as-oxidized AlxGa1−xAs is a combination of four possible phases of Al2O3, η, γ, δ, χ, or AlO(OH). Supporting secondary-ion mass spectrometry data are also presented. Ellipsometer measurements indicate an index of refraction n=1.63 (λ=6328 A(ring)) for the native oxide. Ellipsometer measurements of the oxidized and annealed samples show the creation of a region 300–550 A(ring) thick at the oxide-semiconductor interface with n=2.78–2.93.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4015-4019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I-V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I-V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9951-9962 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Freed et al. have recently developed a lattice cluster theory of polymer solutions that involves series expansions in momentum space. Here we reformulate the lattice cluster theory in coordinate space. The present treatment has certain useful features. In particular, the terms in the reformulated theory can be obtained readily from existing exhaustive computer enumerations. Also, the Flory–Huggins theory can be shown to arise as the first term in a recentered coordinate-space expansion. Generalization to treat polymers in confined space is straightforward.
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  • 8
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report measurements of branching ratios for production of a series of two meson final states in $$\bar p$$ p annihilations at rest in liquid hydrogen. We find: $$\begin{gathered} BR(\bar pp \to \pi ^ + \pi ^ - ) = (3.07 \pm 0.13) \cdot 10^{ - 3} \hfill \\ BR(\bar pp \to K^ + K^ - ) = (0.99 \pm 0.05) \cdot 10^{ - 3} \hfill \\ BR(\bar pp \to \pi ^0 \pi ^0 ) = (6.93 \pm 0.43) \cdot 10^{ - 4} \hfill \\ BR(\bar pp \to \pi ^0 \eta ) = (2.12 \pm 0.12) \cdot 10^{ - 4} \hfill \\ BR(\bar pp \to \pi ^0 \omega ) = (5.73 \pm 0.47) \cdot 10^{ - 3} \hfill \\ BR(\bar pp \to \pi ^0 \eta ') = (1.23 \pm 0.13) \cdot 10^{ - 4} \hfill \\ BR(\bar pp \to \eta \eta ) = (1.64 \pm 0.10) \cdot 10^{ - 4} \hfill \\ BR(\bar pp \to \eta \omega ) = (1.51 \pm 0.12) \cdot 10^{ - 2} \hfill \\ BR(\bar pp \to \eta \eta ') = (2.16 \pm 0.25) \cdot 10^{ - 4} \hfill \\ BR(\bar pp \to \omega \omega ) = (3.32 \pm 0.34) \cdot 10^{ - 2} \hfill \\ BR(\bar pp \to \omega \eta ') = (0.78 \pm 0.08) \cdot 10^{ - 2} \hfill \\ \end{gathered}$$ These are the first measurements of the channels ηη′ and ωη′ and in almost all the other channels are more precise than previous results. We also obtain, in a more precise fashion, the following ratios of branching ratios:K + K −/π+π−=0.323±0.013, π0η′/π0η=0.548±0.056, ηη′/ηη=0.31±0.15, ωη′/ωη=0.515±0.040, π0η/π0π0=0.303±0.010, ηη/π0π0=0.232±0.011 and π0ω/ηω=0.377±0.12. The measurements are made for different η and η′ decays, and we thus obtain Γη→3π 0/Γη→γγ=0.841±0.034, and $$\Gamma _{\eta ' \to \gamma \gamma } /\Gamma _{\eta ' \to \pi ^0 \pi ^0 \eta } = 0.091 \pm 0.009$$ .
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Advances in computational mathematics 1 (1993), S. 367-394 
    ISSN: 1572-9044
    Keywords: Delay differential equation ; parallel continuous explicit Runge-Kutta methods ; vanishing lag ; iterated continuous extensions ; primary 65Q05
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract We present an explicit Runge-Kutta scheme devised for the numerical solution ofdelay differential equations (DDEs) where a delayed argument lies in the current Runge-Kutta interval. This can occur when the lag is small relative to the stepsize, and the more obvious extensions of the explicit Runge-Kutta method produce implicit equations. It transpires that the scheme is suitable forparallel implementation for solving both ODEs and more general DDEs. We associate our method with a Runge-Kutta tableau, from which the order of the method can be determined. Stability will affect the usefulness of the scheme and we derive the stability equations of the scheme when applied to the constant-coefficient test DDEu′(t)=λu(t) +μu(t −τ), where the lagτ and the Runge-Kutta stepsizeH n ≡H are both constant. (The caseμ=0 is treated separately.) In the case thatμ ≠ 0, we consider the two distinct possibilities: (i)τ ≥H and (ii)τ〈H.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Aequationes mathematicae 46 (1993), S. 99-111 
    ISSN: 1420-8903
    Keywords: Primary 39B30, 39B70 ; Secondary 46F99
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Summary This paper is concerned mainly with the functional equation (1) $$\sum\limits_{\imath = 0}^m {F_\imath (\alpha _\imath ,x + \beta _i y)} = \sum\limits_{k = 1}^n {G_k (x)H_k (y)} $$ which is a generalization of the Levi-Civita equation (2) $$f(x + y) = \sum\limits_{k = 1}^N {g_k (x)h_k (y).} $$ For complex valued functions of a real variable, Aczél and Chung [1] have shown that (under certain additional natural assumptions) the locally Lebesgue integrable solutions of (1) are exponential polynomials. Jarai [6] has shown that the local integrability assumption can be weakened to measurability. Our aim is to solve distributional analogues of (1) and (2) and thereby obtain another generalization of the result of Aczél and Chung. Essentially, we will show that (1) can be reduced to (2).
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