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  • Articles  (12)
  • American Institute of Physics (AIP)  (7)
  • Cambridge University Press  (5)
  • 2005-2009
  • 1990-1994  (12)
  • 1993  (12)
Collection
  • Articles  (12)
Years
  • 2005-2009
  • 1990-1994  (12)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1655-1656 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 1076-1094 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Tensor product decompositions of the N=2 superconformal algebras are examined to determine when they are finite or multiplicity-free, using various combinatorial identities. Using similar techniques, branching rules for the winding subalgebras of the N=2 superconformal algebras are investigated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1248-1250 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p(approximately-greater-than)1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH3 in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N2, then repassivated by heating and re-cooling in an AsH3/H2 or PH3/H2 ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath n-type GaAs. This result is consistent with observations in n-p-n heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH3-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2591-2593 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase locking of CO2 waveguide laser arrays of up to 19 channels has been attained by low-loss coupling in a slab waveguide of Talbot imaging dimensions, within a two-mirror cavity. The technique provides strong channel coupling while maintaining a low laser threshold. A seven channel array phase locked into a single mode by this technique has produced 100 W of output and 10% efficiency, demonstrating the effectiveness of Talbot imaging, when combined with confinement in a slab waveguide.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3880-3885 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the effects of low-temperature (∼540 °C) annealing, with and without an As overpressure, on the native oxide of AlxGa1−xAs formed via water vapor oxidation at elevated temperature (∼425 °C). Auger electron spectroscopy data show the Al to be oxidized while the Ga remains unoxidized after the water vapor oxidation of AlxGa1−xAs. Transmission electron microscopy data show a possible composition or phase change upon annealing with an As overpressure. Electron diffraction data indicate that the as-oxidized AlxGa1−xAs is a combination of four possible phases of Al2O3, η, γ, δ, χ, or AlO(OH). Supporting secondary-ion mass spectrometry data are also presented. Ellipsometer measurements indicate an index of refraction n=1.63 (λ=6328 A(ring)) for the native oxide. Ellipsometer measurements of the oxidized and annealed samples show the creation of a region 300–550 A(ring) thick at the oxide-semiconductor interface with n=2.78–2.93.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4015-4019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I-V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I-V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 9951-9962 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Freed et al. have recently developed a lattice cluster theory of polymer solutions that involves series expansions in momentum space. Here we reformulate the lattice cluster theory in coordinate space. The present treatment has certain useful features. In particular, the terms in the reformulated theory can be obtained readily from existing exhaustive computer enumerations. Also, the Flory–Huggins theory can be shown to arise as the first term in a recentered coordinate-space expansion. Generalization to treat polymers in confined space is straightforward.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Cambridge : Cambridge University Press
    The @China quarterly 135 (1993), S. 583-584 
    ISSN: 0305-7410
    Source: Cambridge Journals Digital Archives
    Topics: Linguistics and Literary Studies , History , Political Science , Sociology , Economics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Cambridge : Cambridge University Press
    The @China quarterly 136 (1993), S. 864-877 
    ISSN: 0305-7410
    Source: Cambridge Journals Digital Archives
    Topics: Linguistics and Literary Studies , History , Political Science , Sociology , Economics
    Notes: In 1983 when The China Quarterly published a special issue on Hong Kong, I attempted to synthesize the history of its urban social life, coining the term “Hong Kong Man” to describe what I considered to be the emergence of an identifiable unique social animal. Hong Kong Man, I suggested, was neither Chinese nor British. I characterized him as quick-thinking, flexible, tough for survival, excitement-craving, sophisticated in material tastes, and self-made in a strenuously competitive world. He operated in the context of a most uncertain future, control over which was in the hands of others, and for this as well as for historical reasons he lived “life in the short term”.
    Type of Medium: Electronic Resource
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  • 10
    Publication Date: 1993-07-01
    Description: During the motion of a fluid interface undergoing Rayleigh-Taylor instability, vorticity is generated on the interface baronclinically. This vorticity is then subject to Kelvin-Helmholtz instability. For the related problem of evolution of a nearly flat vortex sheet without density stratification (and with viscosity and surface tension neglected), Kelvin-Helmholtz instability has been shown to lead to development of curvature singularities in the sheet. In this paper, a simple approximate theory is developed for Rayleigh-Taylor instability as a generalization of Moore's approximation for vortex sheets. For the approximate theory, a family of exact solutions is found for which singularities develop on the fluid interface. The resulting predictions for the time and type of the singularity are directly verified by numerical computation of the full equations. These computations are performed using a point vortex method, and singularities for the numerical solution are detected using a form fit for the Fourier components at high wavenumber. Excellent agreement between the theoretical predictions and the numerical results is demonstrated for small to medium values of the Atwood number A, i.e. for A between 0 and approximately 0.9. For A near 1, however, the singularities actually slow down when close to the real axis. In particular, for A = 1, the numerical evidence suggests that the singularities do not reach the real axis in finite time. © 1993, Cambridge University Press. All rights reserved.
    Print ISSN: 0022-1120
    Electronic ISSN: 1469-7645
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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