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  • American Institute of Physics (AIP)  (4)
  • 2015-2019
  • 1990-1994  (4)
  • 1993  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Simulations of hydrogen deposition processes in a-Si:H film growth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3295-3298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics simulations of the deposition of atomic H on both c-Si and a-Si:H substrates are performed to understand the physical processes occurring in the presence of an atomic H flux during growth. The absorption probability, and dynamical behavior of the H are studied as a function of the incident H energy. Both hydrogen absorption and backscattering events are observed. The hydrogen reflection probability has a maximum around 50 eV and decreases at higher incident kinetic energies. In the hydrogen backscattering events a substantial subsurface penetration and energy transfer through collisions are observed. Hydrogen absorption events have been closely analyzed and a surface hydrogen release event was observed during an absorption event.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352977
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Path integral description of polymers using fractional Brownian walks (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9230-9236 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The statistical properties of fractional Brownian walks are used to construct a path integral representation of the conformations of polymers with different degrees of bond correlation. We specifically derive an expression for the distribution function of the chains' end-to-end distance, and evaluate it by several independent methods, including direct evaluation of the discrete limit of the path integral, decomposition into normal modes, and solution of a partial differential equation. The distribution function is found to be Gaussian in the spatial coordinates of the monomer positions, as in the random walk description of the chain, but the contour variables, which specify the location of the monomer along the chain backbone, now depend on an index h, the degree of correlation of the fractional Brownian walk. The special case of h=1/2 corresponds to the random walk. In constructing the normal mode picture of the chain, we conjecture the existence of a theorem regarding the zeros of the Bessel function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465539
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  • 3
    Electronic Resource
    Electronic Resource
    Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with the assistance of atomic hydrogen during the in situ growth of Si on GaAs. Si3N4/Si/GaAs capacitors have shown a minimum interface state density as low as 3×1010 eV−1 cm−2 as determined by the low-frequency capacitance method. The hysteresis and frequency dispersion in the GaAs metal-insulator-semiconductor capacitor are very small (200 and 100 meV, respectively). These results represent significant advances over previous reports.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109162
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  • 4
    Electronic Resource
    Electronic Resource
    Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109075
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