ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This letter compares the effects of two different oxidation techniques, i.e., rapid thermal and conventional wet (steam) oxidations, on the dielectric breakdown and charge trapping characteristics of thin Si3N4 films deposited on rapid thermally nitrided polycrystalline silicon. Results show that, in addition to the low thermal budget, rapid-thermal-oxidized Si3N4 shows superior time-dependent dielectric breakdown characteristics in terms of reduced defect densities and improved film intrinsic properties. Compared to wet-oxidized dielectrics, suppressed charge trapping is observed for rapid-thermal-oxidized Si3N4 stacked dielectrics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107576
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