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  • Articles  (91)
  • 1990-1994  (91)
  • 1980-1984
  • 1965-1969
  • 1994  (60)
  • 1992  (31)
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  • Articles  (91)
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  • 1990-1994  (91)
  • 1980-1984
  • 1965-1969
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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties and magnetostriction in grain-oriented (TbxDy1−x)(Fe1−yMny)1.95 compounds : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7024-7026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties and magnetostriction in grain-oriented (TbxDy1−x)(Fe1−yMny)1.95 compounds with 0.3≤x≤0.5, 0≤y≤0.2 prepared by the Bridgman method have been investigated. It is confirmed that the Mn substitution not only lowers the spin reorientation temperature but also enhances λ〈100〉. This large λ〈100〉 is contradictory to the single-ion model. For Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 compound, no spin reorientation, which induces the sharp drop in the magnetostriction is seen in the temperature range from 77 to 400 K. In addition, by choosing the appropriate compressive stress, the quite excellent thermal stability and the large magnetostriction of 2000 ppm in the low applied field can be realized in the Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 compound. These features make Tb0.5Dy0.5 (Fe0.9Mn0.1)1.95 a promising material applicable to the various giant magnetostrictive actuators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358075
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  • 2
    Electronic Resource
    Electronic Resource
    Broadband near-infrared pulse generation in KTiOPO4 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2757-2760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A broadband near-infrared pulse covering 700 nm around 2.4 μm has been generated by a dispersion-free parametric mixing in a KTiOPO4 crystal between the fundamental pulse (0.8 μm) from a Ti:sapphire regenerative amplifier and the white continuum pulse. It is tunable within the wavelength region of 1.7–2.9 μm. The comparison with a theoretical bandwidth indicates that the noncollinear phase matching plays a part for the spectral broadening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356213
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  • 3
    Electronic Resource
    Electronic Resource
    Elastic properties of 5-mol % MgO doped LiNbO3 crystals measured by line focus beam acoustic microscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2164-2166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrasonic method of line focus beam (LFB) acoustic microscopy is applied to quantitative characterization of LiNbO3 wafers destined for optical use. Commercial Z-cut wafers obtained from two optical grade LiNbO3 crystals, with and without 5-mol % MgO doping, are evaluated by measuring the leaky surface acoustic wave (LSAW) velocities. Doping of 5-mol % MgO to LiNbO3 results in an increase of about 1% in the LSAW velocities and in a decrease of about 0.1% in density. Fewer elastic inhomogeneities are observed in the undoped wafer than in the MgO doped wafer. The measured LSAW velocities are compared with the chemical and physical properties, chemical composition, density, lattice constant, refractive index, and Curie temperature. It is shown that the LFB system has a much greater sensitivity and resolution in the determination of these properties than do other analytical methods. It is suggested that this method should be adopted as a new analytical technique for establishment of the crystal growth conditions and for evaluation of optical grade LiNbO3 wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108282
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  • 4
    Electronic Resource
    Electronic Resource
    High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1111-1113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of high-quality InP/InGaAs double-heterojunction bipolar transistors with heavily Zn-doped base layers (p=4×1019 cm−3) using metalorganic vapor phase epitaxy. Interrupting the growth for 30 min after growing a heavily Si-doped subcollector (n=2×1019 cm−3) is shown to eliminate the excessive nonequilibrium group III interstitials that enhance abnormal Zn diffusivity in the subsequently grown base region. Gummel plots of the fabricated microwave transistors show that they have ideal turn-on characteristics in spite of having only 5-nm-thick undoped spacer layers inserted between the emitter and base. The transistors obtain a maximum oscillation frequency fmax of 178 GHz and a current gain cutoff frequency fT of 126 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110844
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  • 5
    Electronic Resource
    Electronic Resource
    Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2496-2498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High n+ doping ((approximately-greater-than)1019 cm−3 of Si) in the subcollector of InP/InGaAs heterojunction bipolar transistor structures is observed to induce an anomalously high Zn diffusivity and an associated broadening of the base layers. It is proposed that due to Fermi level surface pinning and a long time constant for the recovery of point defect equilibrium the subcollector acts as a continuously operating source of group III interstitials which in turn diffuse into the subsequently grown base region and enhance Zn diffusion via the kick-out mechanism. In this sense, highly n+ doped grown-in subcollector layers may be considered as having the effect of a "time bomb'' in terms of generating undesirable excess point defects during subsequent further crystal growth and device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106945
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  • 6
    Electronic Resource
    Electronic Resource
    Mn substitution effect on magnetostriction temperature dependence in Tb0.3Dy0.7Fe2 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 114-115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetostriction temperature dependencies in Tb0.3Dy0.7 (Fe1−xMnx)2 were investigated. Mn substitution lowers the spin reorientation temperature, at which magnetostriction shows a sharp drop. Moreover, Mn containing compounds show larger magnetostriction than that for a Mn-free compound at low temperature. Mössbauer measurements show that easy magnetization direction for the Mn containing compound is in the 〈111〉 direction at 300 K, while it is in the 〈100〉 at 77 K. These results indicate that the tetragonal distortion λ100 increases by Mn addition in Tb0.3Dy0.7Fe2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107657
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  • 7
    Electronic Resource
    Electronic Resource
    Millimeter wave amplification in a free electron laser with a focusing wiggler (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 36-42 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mm wave amplifier experiment on a free electron laser was performed using an intense, mildly relativistic electron beam (0.7–0.9 MeV) with a combination of a focusing planar wiggler and a weak additional axial magnetic field in the so-called "group 1'' region. A beam transport ratio of over 80%, through the whole wiggler length, was realized. In an amplification experiment, a spatial growth rate of 56 dB/m was obtained at a frequency of 45 GHz, and a power saturation was observed at a level of 6 MW, where the total gain was estimated to be 52 dB. It was shown that the off-axis component of the beam contributes considerably to the rf amplification in the focusing wiggler.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355861
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  • 8
    Electronic Resource
    Electronic Resource
    2,2,4,4,6,6-Tris(2,3-naphthylenedioxy)cyclotriphosphazene (1994)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 324-326 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270193007772
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of dry operating conditions: observation of oscillations and low temperature CO oxidation over Co3O4 and Au/Co3O4 catalysts (1994)
    Springer
    Catalysis letters 25 (1994), S. 257-264 
    Details
    ISSN: 1572-879X
    Keywords: Co3O4 ; gold ; CO oxidation ; oscillation ; moisture effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effect of dry operating conditions upon the oxidation of CO over Co3O4 and Au/Co3O4 has been studied. Under dry conditions (with pretreatment and reaction gases dried at −76°C using molecular sieve traps) oxidation of CO over Co3O4 can be observed at temperatures as low as −54°C. However, without sufficient drying Co3O4 rapidly deactivates. On the other hand, the Au/Co3O4 catalyst is resistant to the presence of moisture even at low temperatures. For both the Co3O4 and Au/Co3O4 catalytic systems, strong and periodic oscillations in percentage conversion and catalyst bed temperature have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00816305
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  • 10
    Electronic Resource
    Electronic Resource
    A new runaway type episomal vector for mammalian cells based on a temperature-sensitive simian virus 40 and inducible erythropoietin production (1994)
    Springer
    Applied microbiology and biotechnology 41 (1994), S. 591-596 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract A runaway vector for mammalian cells was constructed from the simian virus 40 (SV40) genome with a temperature-sensitive mutation of the large T antigen and bacterial neo r gene. Replication of this plasmid was repressed above 39°C and vigorous DNA propagation was observed below 33°C in simian CV-1 cells. The human erythropoietin gene was inserted downstream of the SV40 late promoter of the plasmid and the recombinant plasmid was introduced into CV-1 cells. By a temperature shift from 37 to 33°C, the plasmid copy number increased from 5 × 102 to 5 × 103 copies per cell and the specific production rate of erythropoietin increased more than ten-fold. The bacterial-derived sequences such as the neo r gene and vector pUC sequences were prone to delete but the main body of the recombinant plasmid such as SV40 and the erythropoietin-coding sequences were stably maintained at either 33 or 37°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00178495
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