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  • Artikel  (208)
  • 1990-1994  (208)
  • 1991  (208)
  • Physik  (140)
  • Biologie  (75)
  • Allgemeine Naturwissenschaft  (8)
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  • Artikel  (208)
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  • 1990-1994  (208)
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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Journal of cluster science 2 (1991), S. 105-116 
    ISSN: 1572-8862
    Schlagwort(e): Electronic structure ; cluster ; eigenvectors ; Kronecker product
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A regular polyhedron is isomorphic to a cluster on which every face has same number of bonds and every atom has an equal number of coordinating atoms. A general strategy for generating the eigenvectors and the eigenvalues of regular polyhedra is given. Net sign analyses are also performed on the eigenvectors of regular polyhedra. The results provide us a quick way to grasp the topological feature of the electronic structure of clusters having interesting topology.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Journal of cluster science 2 (1991), S. 219-229 
    ISSN: 1572-8862
    Schlagwort(e): Atomic cluster ; cluster bonding ; cluster structure
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A regular polyhedron is isomorphic to a cluster on which every face has same number of bonds and every atom has an equal number of coordinating atoms. A general strategy for generating the eigenvectors and the eigenvalues of regular polyhedra is given. Not sign analyses are also performed on the eigenvectors of regular polyhedra. The results provide us a quick way to grasp the topological feature of the electronic structure of clusters having interesting topology.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 674-684 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of impurities, such as Si and Be, on both the creation and the migration of Ga vacancies in annealing of GaAs were investigated by a slow positron beam technique. The results show that vacancies diffuse from the surface during the annealing and one of the dominant types is a monovacancy of Ga, VGa, in Be-doped GaAs and/or Si-doped GaAs, while the other is a divacancy of VGa-VAs in undoped GaAs. In annealing the bilayer structures composed of the Si-doped layer grown on the Be-doped layer, it was found that VGa is a major type of defect rather than VGa-VAs if the Si concentration is higher or lower than the Be one in GaAs, but VGa-VAs is dominant if the concentrations of the impurities are similar. This proposes that the interaction between Si and Be is stronger than that of VAs-BeGa and/or VGa-SiGa. The Ga interstitial IGa is created in the Be-doped layer where IGa interacts with VGa created from the surface and suppresses the migration of VGa. This supports the validity of the kick-out mechanism involving a column-III interstitial rather than the Longini mechanism for Be diffusion in GaAs. In Si-doped GaAs, VGa is created from the surface and the diffusion constant of VGa decreases with the increase of Si doping concentration. This implies that VGa forms a complex of SiGa-VGa and the interaction time of VGa at the Si donor by making a complex of SiGa-VGa is a rate-limiting step in the diffusion of VGa in GaAs. The present results propose the creation of IGa and VGa in the Be-diffused GaAs and in Si-diffused GaAs, respectively. This is consistent with the Fermi-level effect of the impurities on the creation of those defects.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 182-192 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6040-6042 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The 57Fe Mössbauer-effect spectra of the series of hard magnetic materials, R2Fe14C, where R is Nd, Gd, Tb, Dy, Ho, and Lu, have been measured at 295 K. All of these carbides exhibit uniaxial magnetic anisotropy. The spectra resemble those obtained for the related R2Fe14B compounds and have been fit with the model used earlier for Nd2Fe14B. The magnitude of the hyperfine field on each site, as a function of rare earth, parallels the Curie temperature; the maximum hyperfine fields and the maximum Curie temperature are observed for Gd2Fe14C. A linear correlation is observed between the hyperfine fields on the six sites in the analogous borides and carbides; however, these fields are systematically smaller in the carbides. The decrease in the tetragonal unit cell c-axis length in the carbides apparently reduces the exchange interactions between the 8j and 16k iron layers and hence reduces the moments. The isomer shift on each site decreases as the atomic number of the rare earth increases, whereas the quadrupole interactions are independent of rare earth.
    Materialart: Digitale Medien
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  • 6
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic structures of a series of Y2(Fe1−xMnx)14B samples, with x equal to 0.03, 0.10, 0.25, and 0.37, have been studied by powder neutron diffraction and Mössbauer spectroscopy. Y2(Fe0.97Mn0.03)14B and Y2(Fe0.9Mn0.1)14B are ferromagnetic at both 295 and 85 K, Y2(Fe0.63Mn0.37)14B is paramagnetic at both 295 and 85 K, whereas Y2(Fe0.75Mn0.25)14B is paramagnetic at 295 K and is partially ordered at 78 K. The magnetic structure of Y2(Fe0.75Mn0.25)14B is explained in terms of the preferential Mn occupancy of the transition metal 8j2 site in the Y2Fe14B structure. Small amounts of Mn located in this site are very effective in disrupting the long-range ferromagnetic coupling.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1730-1736 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxially aligned films of β-FeSi2 were grown on (001) silicon by reactive deposition epitaxy (RDE), molecular-beam epitaxy (MBE), and solid-phase epitaxy (SPE). Although the matching crystallographic faces, FeSi2 (100)/Si(001), remained invariant throughout this study, two different azimuthal orientations predominated, depending on the deposition mode and growth temperature. Films with the FeSi2[010](parallel)Si〈110〉 orientation (grown by RDE at typically 500 °C) were of a genuine large-area single-crystal structure; however, the surface morphology was rough due to islanding which always preceeded the formation of a continuous film. Films of the alternative azimuthal orientation FeSi2[010](parallel)Si〈100〉 (which were grown by SPE at typically 250 °C or by MBE at temperatures as low as 200 °C on top of an SPE-grown template) have a much smoother surface morphology. However, there was some loss of purity in the epitaxial alignment at these extremely low temperatures. Excellent RHEED (reflection high-energy electron diffraction) streak patterns were observed for all the films; the technique was used for the determination of azimuthal orientation. In addition, we have shown that it is possible to determine the entire heteroepitaxial relationship using RHEED.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6364-6368 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The slow positron beam technique was applied on undoped and Be-doped GaAs to study the effects of Be impurities on both creation and migration of Ga vacancies, VGa, during annealing. It is observed that a monovacancy of VGa is created in Be-doped GaAs to result in enhanced Coulombic interaction between As vacancy, VAs, and Be acceptor, BeGa. In undoped GaAs, the formation of divacancies, VGa-VAs, is dominant. The migration depth of vacancies is shorter in Be-doped GaAs than in undoped GaAs. This suggests the existence of Ga interstitials, IGa, in the Be diffused layer which interact with VGa introduced from the surface. Based on these observations, we suggest the kick-out mechanism for Be diffusion in GaAs.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2877-2879 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We applied slow positrons to both as-etched GaP and (NH4)2Sx-treated GaP. The results show that the surface of as-etched GaP is active for the adsorption of oxygen atoms when the etched surface was exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur in (NH4)2Sx-treated GaP is effective to protect the clean surface from the adsorption of the oxygen atoms. The mean diffusion length of positrons in the etched GaP is shorter than that in (NH4)2Sx-treated GaP. This suggests that the centers for the positron trapping, such as Ga vacancies VGa and/or VGa-related complexes, are created by the adsorption of oxygen atoms.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5983-5985 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The changes in magnetic and crystallographic properties in the series Th2Fe17Cx and Th2Fe17Nx have been studied. The changes in the latter series were also studied by 57Fe Mössbauer spectroscopy. The ultimate enhancements of the saturation moments in these series are 13% and 24%, respectively. This is much larger than observed previously in the corresponding rare-earth compounds, although the Curie temperature enhancements are of comparable magnitude. In the Th–Fe–C system a novel compound of the BaCd11 type was found, having a Curie temperature around 370 K.
    Materialart: Digitale Medien
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