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  • American Institute of Physics (AIP)  (111)
  • 1990-1994  (111)
  • 1935-1939
  • 1991  (111)
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2405-2407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on electrical and optical properties in GaAs epilayers grown on Si substrate by metalorganic chemical vapor deposition have been investigated. In as-grown GaAs layers on Si substrates, typically four deep levels at 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were observed by deep level transient spectroscopy. After hydrogen plasma exposure at 250 °C for 2.5 h, the 0.68 eV level disappeared. In addition, the reverse leakage current in the hydrogenated sample decreased by three orders of magnitude compared to the untreated sample. These effects persist after dehydrogenation process with a 5 min, 400 °C anneal. The results indicate that the hydrogenation for GaAs-on-Si has some benefits to its device application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104885
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  • 2
    Electronic Resource
    Electronic Resource
    A study on the Kerr effect enhancement by the multidielectric layer structure : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5987-5988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many types of magneto-optical structures have been investigated to improve the MO Kerr effect. We have studied the enhancement of the MO Kerr effect in the Tb21Fe79 amorphous film having a multidielectric structure in which the TiO2 layer is sandwiched by SiNx layers. The variations of Kerr angle and reflectivity with the thickness of dielectric layer are calculated by using the reiterative formula [M. Mansuripur, G. A. N. Connel, and J. W. Goodman, J. Appl. Phys. 53, 4485 (1982)]. Experiment and simulation results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347813
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of AgGaSe2 and AgGaSe2:Co2+ single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7797-7799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the optical energy gaps in AgGaSe2 and AgGaSe2:Co2+ single crystals has been investigated. The impurity optical absorption of AgGaSe2:Co2+ has also been studied. In the temperature dependence of the energy gaps, the temperature coefficients (dEg/dT) are measured to be 1.8×10−4 eV/K (10–60 K) and −3.2×10−4 eV/K (95–300 K) for the AgGaSe2, and 8.9×10−5 eV/K (10–60 K) and −1.0×10−4 eV/K(80–300 K) for the AgGaSe2:Co2+, respectively. In the optical-absorption spectrum of the AgGaSe2:Co2+, three absorption bands of 1.54, 0.72, and 0.51 eV are observed. It is identified that these impurity absorption peaks are attributed to the electronic transitions between the split energy levels of Co2+ ion with Td symmetry sites of the AgGaSe2 host lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347507
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  • 4
    Electronic Resource
    Electronic Resource
    Nb-added high-coercivity Nd-Fe-B melt-spun ribbon with high remanence : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6477-6479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of composition and additives on the microstructures and magnetic properties of Nd-Fe-B melt-spun ribbons were studied. Experimental results have revealed that homogeneous grain structure with fine grain size was obtained on composition close to 2-14-1 stoichiometry with additives. It was also found that Nb was very effective in increasing both remanence and coercivity in a Nd-Fe-B melt-spun ribbon. A high-energy product of 151.2 kJ/m3 (19.0 MGOe) was obtained from an isotropic (Nd0.5Pr0.5)12Fe72Co8B6Nb2 melt-spun ribbon with a remanence of 0.926 T and a coercivity exceeding 1200 kA/m (∼15 kOe).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349905
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of photochemical vapor deposition phosphorus-nitride interfacial layer on electrical characteristics of Au-InP Schottky diodes (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6699-6700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride(P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-A(ring) P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 × 10−8 A(ring)/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348972
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen bonding between the water molecule and the hydroxyl radical (H2O⋅OH): The 2A‘ and 2A' minima (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2057-2062 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The two degenerate components of the OH radical 2Π ground electronic state give rise to independent minima (of 2A‘ and 2A' symmetries) upon interaction with the water molecule. These two minima have been investigated here for the first time using ab initio quantum mechanical methods. Minimum, double zeta, double zeta plus polarization, and triple zeta plus double polarization basis sets have been employed in conjunction with self-consistent-field, second-order perturbation, and configuration interaction methods. At all levels of theory, the 2A‘ state is predicted to be the global minimum, with a dissociation energy De of about 3.5 kcal/mol. The 2A' state is predicted to lie about 1 kcal higher in energy. Both minima occur for structures with OH⋅⋅⋅O linkages close to linear and are reminiscent of the water dimer. However, the H⋅⋅⋅O distances (∼2.1 A(ring) for 2A‘, ∼2.2 A(ring) for 2A') are significantly longer than observed for the water dimer. Preliminary estimates of the H2O⋅OH vibrational frequencies are made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459927
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  • 7
    Electronic Resource
    Electronic Resource
    Si—O bond structure in slow-ion deposited SiO2 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3354-3356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By impinging a beam of O+2 ions of energy 150 eV〈E〈1 keV on a Si(100) surface, we produced oxide films of varying thickness at room temperature. We find that the Si—O bond features of the films are quite similar to those of a thermally prepared vitreous SiO2 glass. We further observe that an intermediate range order in the form of n-member ring clusters with n=4 and n=6 exists in the resulting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348565
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  • 8
    Electronic Resource
    Electronic Resource
    Dislocation-accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1355-1358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) profiling of delta-doped GaAs layers grown by metalorganic chemical vapor deposition on Si substrates has been employed to demonstrate a dislocation-accelerated diffusion of Si impurities initially confined in the delta-doped sheets. A close correlation between dislocation densities in the epitaxial layers and the diffusion coefficients obtained from C-V analyses is established. After rapid thermal annealing at 800, 900, 950, and 1000 °C for 7 s, the temperature dependence of the diffusion coefficient is found to be D-30 exp(−3.4 eV/kT) for a delta-doped GaAs-on-Si with a relatively thick buffer layer of 3.3 μm. The result shows that the dislocation-accelerated diffusion of Si impurities is considerable and the inclusion of a thick buffer layer (−3 μm) is not sufficient for preventing the diffusion of the impurities into a device-active region near the GaAs surface if high temperature (〉800 °C) processing is involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347272
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  • 9
    Electronic Resource
    Electronic Resource
    On the flow of a thin liquid film over a rotating disk (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2593-2601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depletion of thin liquid films due to the combined effect of centrifugation, surface roughness, and air shear has recently been studied.While surface roughness of a rotating solid disk can be represented by deterministic curves, it has been argued that spatial random processes provide a more realistic description. Chiefly because of surface roughness, there is an asymptotic limit of retention of a thin film flowing on the rotating disk. The aim of this article is twofold. First, the effect of disjoining pressure on the retention of a thin film is investigated. It is found that incorporating disjoining pressure term has small but still appreciable effect on the asymptotic limits of lubricant retention. For a partially wetting lubricant, the two components of the disjoining pressure function tend to have opposite influence on the lubricant retention; one enhances the retention, while the other diminishes it. Second, the robustness of stochastic description of surface roughness is examined. For a given mean and variance, it is noted that different probability distributions of the surface fluctuations lead, in the absence of air shear, to significantly different asymptotic limits of thin-film retention. If air shear is incorporated, this sensitivity is substantially attenuated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348650
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of electron deep traps on generation lifetime in denuded zone of n-type Si wafer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6979-6981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron deep traps on generation lifetime in heat-treated n-type Czochralski-grown (111) Si were examined by generation lifetime and deep level transient spectroscopy measurements. An order of magnitude increase in generation lifetime was observed for the samples having denuded zone, which experienced the high/low heat treatment (20 h at 1100 °C+16 h at 750 °C). Deep electron traps at Ec − 0.47, 0.42, 0.39, and 0.30 eV occur in the oxygen precipitated region by heat treatment. Especially, the concentration of the Ec − 0.47 eV trap decreased below 5×1012 cm−3 in denuded zone. From these results, we conclude that enhancement of generation lifetime in denuded zone may be dominantly related to the decrease of concentration of the Ec − 0.47 eV trap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347636
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