ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Ballistic-carrier spectroscopy of the CoSi2/Si interface (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies were used to investigate carrier transport in the epitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission was observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure was observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.
    Keywords: SOLID-STATE PHYSICS
    Type: Physical Review B - Condensed Matter, 3rd Series (ISSN 0163-1829); 44; 6546-654
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Direct spectroscopy of electron and hole scattering (1990)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A new spectroscopy has been developed for the first direct probe of carrier-carrier scattering in materials. This spectroscopy provides spatial and energy resolution of the scattering process and has been used to investigate transport, scattering phenomena, and hot-carrier creation in two important metal-semiconductor systems. A theoretical treatment of this scattering spectroscopy yields excellent agreement with experimental spectra and provides direct evidence that carrier-carrier scattering is a dominant energy-loss mechanism in hot-carrier transport.
    Keywords: SOLID-STATE PHYSICS
    Type: Physical Review Letters (ISSN 0031-9007); 64; 2679-268
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Pulsatile instability in rapid directional solidification: Strongly-nonlinear analysis (1992)
    In:  CASI
    Details
    Publication Date: 2013-08-29
    Description: In models of rapid directional solidification, non-equilibrium interfacial conditions are employed. As a result, there is an oscillatory mode of instability, as well as the steady cellular mode, found in the equilibrium model of Mullins and Sekerka. When the temperature field is decoupled from the problem, the preferred wave number for the oscillatory mode is zero, and the interface pulsates in time while remaining spatially uniform. Results from multiple scale analyses in the two limiting cases of the parameters are reported. In these limits, it is found that the instability is a bifurcation to relaxation oscillations; these nonlinear oscillations may be related to the observed microstructure that results from rapid solidification processes such as laser surface remelting.
    Keywords: SOLID-STATE PHYSICS
    Type: ESA, Proceedings of the 8th European Symposium on Materials and Fluid Sciences in Microgravity, Volume 2; p 559-562
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films (1990)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.
    Keywords: SOLID-STATE PHYSICS
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    Melt-processed bulk superconductors: Fabrication and characterization for power and space applications (1991)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Melt-process bulk superconducting materials based on variations on the base YBa2Cu3O(x) were produced in a variety of shapes and forms. Very high values of both zero-field and high-field magnetization were observed. These are useful for levitation and power applications. Magnetic measurements show that the effects of field direction and intensity, temperature and time are consistent with an aligned grain structure with multiple pinning sites and with models of thermally activated flux motion.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA, Washington, Technology 2000, Volume 2; p 356-364
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Silicon carbide semiconductor device fabrication and characterization (1990)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-186354 , NAS 1.26:186354 , AD-A231299
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Thermal effects in rapid directional solidification - Linear theory (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: We study the morphological instability of the planar solid/liquid interface for a unidirectionally-solidified dilute binary mixture. We use a model developed by Boettinger et al. (1985, 1986), Aziz (1982), and Jackson et al. (1980), which allows for nonequilibrium effects on the interface through velocity-dependent segregation and attachment kinetics. Two types of instabilities are found in the linear stability analysis: (1) a cellular instability, and (2) an oscillatory instability driven by disequilibrium effects. Merchant and Davis (1990) characterized these instabilities subject to the frozen-temperature approximation (FTA). The present work relaxes the FTA by including the effects of latent heat and the full temperature distribution. Thermal effects slightly postpone the onset of the cellular instability but dramatically postpone the onset of the oscillatory instability; however, the absolute-stability conditions, at which at high speed the cellular and oscillatory instabilities are suppressed, remain unchanged from the FTA.
    Keywords: SOLID-STATE PHYSICS
    Type: Acta Metallurgica et Materialia (ISSN 0956-7151); 41; 7; p. 2025-2043.
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    Morphological instability in epitaxially strained dislocation-free solid films - Linear stability theory (1993)
    In:  Other Sources
    Details
    Publication Date: 2019-08-28
    Description: The morphological instability of a growing epitaxially strained dislocation-free solid film is analyzed. An evolution equation for the film surface is derived in the dilute limit of vacancies based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem the conditions for which a growing film is unstable are determined. It is found that the instability is driven by the lattice mismatch between the film and the substrate; however, low temperatures as well as elastically stiff substrates are stabilizing influences. The results also reveal that the critical film thickness for instability depends on the growth rate of the film itself. Detailed comparison with experimental observations indicates that the instability described exhibits many of the observed features of the onset of the 'island instability'.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 73; 10:00 PM; p. 4955-4970.
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning (1991)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 69; 7182-718
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Buoyancy effects of a growing, isolated dendrite (1991)
    In:  Other Sources
    Details
    Publication Date: 2019-08-27
    Description: The buoyancy effect of a growing isolated dendrite on the solidification process in the undercooling liquid material was investigated by developing an analytic solution to the growth/convection problem in powers of a buoyancy parameter G. The solution depends on the Prandtl number P and the Stefan number S (undercooling) for the local velocity and thermal fields and also the buoyant alteration of the interface shape. Results suggest that buoyancy effect for metals (low P) may be qualitatively different from that for organics (high P).
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 114; 1-2,; 153-185
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...