Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 439-441
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have discovered that a class of inorganic sulfides [Li2S, (NH4)2S, Na2S⋅9H2O, etc.] imparts excellent electronic properties to GaAs surfaces. The surface recombination velocity at the interface between Na2S⋅9H2O and GaAs begins to approach that of the nearly ideal AlGaAs/GaAs interface. We propose the formation of a robust covalently bonded sulfide layer to explain the favorable electronic quality of such interfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98415
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