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  • American Institute of Physics (AIP)  (839)
  • American Association for the Advancement of Science (AAAS)  (352)
  • 2005-2009
  • 1985-1989  (1,191)
  • 1987  (1,191)
  • 1
    Electronic Resource
    Electronic Resource
    Vibrational spectra of methylthiirane (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 1140-1146 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrational Raman, infrared absorption, and infrared circular dichroism (VCD) spectra were measured for methylthiirane. Ab inito vibrational frequencies were calculated with a 6-31G basis, and vibrational assignments were suggested by comparing the experimental and theoretical data. These assignments were used for the interpretation of the experimental VCD spectrum of (R)-methylthiirane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452257
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  • 2
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    Construction of synthetic immunogen: use of new T-helper epitope on malaria circumsporozoite protein (1987)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1987-02-27
    Description: The circumsporozoite (CS) protein of Plasmodium falciparum is the focus of intense efforts to develop an antisporozoite malaria vaccine. Localization of sites for T-cell recognition on this molecule is critical for vaccine design. By using an algorithm designed to predict T-cell sites and a large panel of H-2 congenic mice, a major nonrepetitive T-cell site was located. When a synthetic peptide corresponding to this site was covalently linked to the major B-cell site on the molecule, an immunogen capable of eliciting a high-titer antibody response was formed. This peptide sequence could prime helper T cells for a secondary response to the intact CS protein. The new helper T-cell site is located outside the repetitive region of the CS protein and appears to be the immunodominant T site on the molecule. This approach should be useful in the rational design and construction of vaccines.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Good, M F -- Maloy, W L -- Lunde, M N -- Margalit, H -- Cornette, J L -- Smith, G L -- Moss, B -- Miller, L H -- Berzofsky, J A -- New York, N.Y. -- Science. 1987 Feb 27;235(4792):1059-62.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/2434994" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Animals ; Antibody Formation ; Antigens, Protozoan/immunology ; Antigens, Surface/*immunology ; B-Lymphocytes/immunology ; Epitopes/*immunology ; Mice ; Peptide Fragments/chemical synthesis/*immunology ; Plasmodium falciparum/*immunology ; *Protozoan Proteins ; Receptors, Antigen, B-Cell/immunology ; Receptors, Antigen, T-Cell/immunology ; T-Lymphocytes/immunology ; T-Lymphocytes, Helper-Inducer/*immunology ; Vaccines/immunology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Narrow-linewidth, electro-optically tunable InGaAsP-Ti:LiNbO3 extended cavity laser (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 164-166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an electro-optically tunable, single-frequency extended cavity laser with a linewidth of less than 60 kHz. The laser consists of a 1.5-μm InGaAsP gain medium and an electro-optically tunable, narrow-band Ti:LiNbO3 wavelength filter (Δλ≈12 A(ring)). Electro-optic tuning over at least 70 A(ring) and single-frequency operation with output power of more than 1 mW have been demonstrated. The laser linewidth was measured by beating the laser against a 1.523-μm HeNe laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98909
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  • 4
    Electronic Resource
    Electronic Resource
    Ohmic contacts to n-GaAs using In/Pd metallization (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 326-327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts to n-GaAs (Si doped at 2×1018 cm−3) with contact resistances of 0.7–1.5×10−6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≈200 A(ring)) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98429
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  • 5
    Electronic Resource
    Electronic Resource
    Noncontact doping level determination in GaAs using photoreflectance spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4558-4562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shifts of the band edge in GaAs layers as measured by photoreflectance (PR) spectroscopy have been accurately calibrated to the N-type doping level (Nd). Samples produced by controlled Si-doping experiments using ion implantation of GaAs substrates and GaAs doped with Si to known levels during growth by molecular-beam expitaxy have been investigated with this technique. A measurable change in the location of the band gap (E) determined from PR directly correlates with the maximum N-type doping level as determined via C-V for both types of samples with a change of band gap δE/δNd=5.8±0.5×10−20 eV cm3 for 1×1016 cm−3 ≤Nd≤8×1017 cm−3. Correlations were also made to sheet carrier concentration (Hall measurements). This method is shown to be fast, accurate, and easily applicable to uniformity studies and a viable alternative to either C-V or Hall measurements for nondestructive determination of Nd.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339050
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1372-1379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented showing that the Al-Ga interdiffusion coefficient (DAl-Ga) for an AlxGa1−xAs-GaAs quantum-well heterostructure, or a superlattice, is highly dependent upon the crystal encapsulation conditions. The activation energy for Al-Ga interdiffusion, and thus layer disordering, is smaller for dielectric-encapsulated samples (∼3.5 eV) than for the case of capless annealing (∼4.7 eV). The interdiffusion coefficient for Si3N4-capped samples is almost an order of magnitude smaller than for the case of either capless or SiO2-capped samples (800≤T≤875 °C). Besides the major influence of the type of encapsulant, the encapsulation geometry (stripes or capped stripes) is shown, because of strain effects, to be a major source of anisotropic Al-Ga interdiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338116
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of soft x-ray amplification in neonlike molybdenum (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5243-5248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin molybdenum coated foils have been irradiated in line focus geometry with from 3 to 8×1014 W cm−2 of 0.53-μm light at the Nova laser. The resulting exploding foil plasma has demonstrated x-ray laser gain at four wavelengths (106.4, 131.0, 132.7, and 139.4 A(ring)), identified as 3s-3p transitions in neonlike Mo. The J=0–1, a 3s–3p transition at 141.6 A(ring) has been identified, but does not show evidence of significant gain in disagreement with the theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338309
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1234-1236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterojunction NpN GaAs/InxGa1−xAs/GaAs bipolar transistor layers have been grown by molecular-beam epitaxy, and large-area devices have been processed and characterized. The indium mole fraction in the strained base layer, and thus the band offsets, has been varied with significant differences in current gains. From the gain versus indium-composition relation a valence-band offset of ΔEv =9.7 meV/% In is derived. We found that the highest base-In content yields the highest-gain devices despite the presence of interface misfit dislocations and dark-line defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338179
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4248-4254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a combination of electron-beam-induced current (EBIC), etching, and optical measurements to show dramatic differences between the minority-carrier transport properties and defect structures in GaAs wafers from two different vendors. We found that the EBIC defects correspond to the traditional ones found with molten KOH etching and optical inspection. However, the EBIC micrographs give a great deal of additional information. The EBIC patterns from the first vendor's wafer showed diagonal striations and point defects that made the EBIC go to zero and were interconnected by wormlike lines. The second vendor's wafers showed EBIC point defects that only suppressed the response by 20% and gettered the surrounding material so that it had higher EBIC response. However, this second vendor's wafer had about a 15% overall lower EBIC response and a much higher density of surface polish defects identified by reflected light. Etching data showed that EBIC defects are bulk material properties and that electrochemical etching with a KOH electrolyte allows the wormlike defects to be seen optically in a Nomarski equipped microscope. Examination of epilayers showed that the wafer defects did not propagate up into a 4-μm-thick layer grown by vacuum chemical epitaxy or a 1.5-μm-thick layer grown by molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339098
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  • 10
    Electronic Resource
    Electronic Resource
    University of Missouri–Rolla cloud simulation facility: Proto II chamber (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 826-834 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Graduate Center for Cloud Physics Research at UMR has developed a cloud simulation facility to study phenomena occurring in terrestrial clouds and fogs. The facility consists of a pair of precision cooled-wall expansion chambers along with extensive supporting equipment. The smaller of these chambers, described in this article, is fully operational, and is capable of simulating a broad range of in-cloud thermodynamic conditions. It is currently being used to study water drop growth and evaporation for drops nucleated (activated) on well-characterized aerosol particles. Measurements have been made not only for continuous expansions (simulated updraft) but also for cyclic conditions, i.e., sequences of expansion-compression cycles resulting in alternating drop growth and evaporation. The larger of the two cloud chambers is nearing completion and will provide a broader range of conditions than the smaller chamber. The facility is supported by a fully implemented aerosol laboratory which routinely produces well-characterized condensation nuclei. The aerosol laboratory contains extensive instrumentation designed to both shape and measure the size distribution and nucleating characteristics of the generated aerosol. The cloud simulation facility also includes a humidifier to bring an air sample to a known humidity before it is put into the cloud chamber. A systematic program to infer effective condensation coefficients (of water vapor on cloud drop) under a variety of well-controlled simulated in-cloud conditions is now under way. Analysis of current experiments with standard drop growth theory indicates a variation of condensation coefficient with observation time, with values sufficiently low to explain one of the current mysteries in cloud physics: viz., the broad spread of drop sizes observed in natural clouds. This article includes a description and performance specifications of the smaller cloud simulation chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139640
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