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  • Springer  (3)
  • Oxford University Press
  • Wiley-Blackwell
  • 2015-2019
  • 1985-1989  (3)
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  • 1986  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Doping efficiencies of gas-phase and ion-implantation doped a-Si:H (1986)
    Springer
    Applied physics 41 (1986), S. 253-258 
    Details
    ISSN: 1432-0630
    Keywords: 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We compare the electronic properties of gas-phase and implantation doped a-Si:H films and analyze their properties within the framework of Street's auto-compensation model [1]. We find that this model can consistently explain the varying degrees of sensitivity with respect to doping for differently prepared a-Si:H materials. In agreement with sub-band-gap absorption data our analysis indicates that the density of native dangling bond defects is increased when the film thickness is decreased and when thin films are further subjected to ion bombardment. Considering the temperature dependence of conductivity, we find that the auto-compensation model can provide an explanation for the high-temperature kink in the conductivity of doped a-Si:H films but that it fails to account for the experimentally observed universality of the “Meyer-Neldel-rule” behaviour of the conductivity prefactor in differently prepared and doped a-Si:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616046
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  • 2
    Electronic Resource
    Electronic Resource
    A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon (1986)
    Springer
    Applied physics 39 (1986), S. 243-250 
    Details
    ISSN: 1432-0630
    Keywords: 12.80. Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We propose that during deposition of a-Si:H films a chemical equilibrium is established that relates the density of dangling-bond defects near mid-gap to the densities of electrons and holes in the conduction and valence band states. We develop the appropriate chemical reaction formalism and show that our model allows doping, compensation and photo-induced degradation to be treated within a single and unifying approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617268
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  • 3
    Electronic Resource
    Electronic Resource
    Insertion mutation inactivates the expression of the recessive oncogene lethal(2)giant larvae of Drosophila melanogaster (1986)
    Springer
    Molecular genetics and genomics 204 (1986), S. 58-63 
    Details
    ISSN: 1617-4623
    Keywords: Drosophila recessive oncogene ; Mutations ; Molecular cloning ; Mobile elements ; Transcription
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The Drosophila recessive oncogene lethal(2)giant larvae is located at the extreme left end of the second chromosome close to telomeric repetitive sequences. Of the 20 l(2)gl mutant alleles isolated from wild flies in widespread populations of the Soviet Union and California, all but two appear to represent large deletions which have removed the telomeric repetitive sequences and l(2)gl single copy sequences (Mechler et al. 1985). We have analyzed the structure of the two exceptions: the l(2)glGB52 mutation results from the insertion of a single transposable element of the B104 or roo family, whereas the more complex rearrangements of the l(2)glDV275 mutation consists of an 8 kb interstitial deletion whose breakpoints have become associated with a large transposed DNA fragment. Characterization of this fragment shows that it consists of B104 sequences flanked on one side by sequences originating from the chromosomal region 24D. Furthermore, we show that in both mutants normal transcription of the l(2)gl gene is abolished.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00330187
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