ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Validity of self-bias voltage measurements on insulating electrodes in radio-frequency dry etching systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2074-2076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the measured value of the self-bias voltage on electrodes with an insulating target plate in a radio-frequency dry etching system is strongly influenced by the configuration of the electrode, and may have no straightforward relation with the actual self-bias voltage between the target surface and ground. The mechanism allowing measurement of the self-bias voltage is identified as plasma-induced surface conduction on the insulating target plate assisted by high electric fields at the target plate edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335968
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of planar rf discharges for dry etching (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 653-658 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: rf impedance, dc self-bias, and ion sheath (dark space) thicknesses are measured in an O2 discharge for 7–53 Pa pressure and 50–800 W rf power (13.56 MHz). Special attention is paid to corrections for reactor stray impedances. It is concluded that the discharge can be described as a capacitance (the ion sheath) with both a parallel and a series resistance, the series element being the more important one. Good agreement is found between optical and electrical measurements of the ion sheath thickness. Evidence is presented that the dc potential difference between plasma and ground and rf electrode can be estimated with reasonable accuracy from the dc self-bias and the optical dark space thicknesses. Positive ion acceleration in the ion sheath and electron-neutral collisions in the bulk of the plasma glow account for only part of the total rf power transfer. It is suggested that significant dissipation takes place near the glow-sheath boundary, although a quantitative description cannot be given yet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336177
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    High-resolution infrared absorption measurements of Al-doped ZnSe (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2553-2558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption measurements of localized vibrational modes (LVM) due to Al in ZnSe performed under high-resolution conditions reveal additional features as compared to previous data. The cluster of bands near 340 cm−1 is resolved into at least six and possibly eight individual absorptions. A Green's function calculation over various pertinent models best explains most of these LVM as probably arising from a (2 AlZn-ZnSe) antisite complex (or at least an AlZn pair) with other complexes less likely. The linewidth of individual features can be explained in terms of nearest-neighbor Se host lattice isotopes. Finally, features perturbed from the isolated AlZn case are considered as well as the remaining LVM of unknown origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335935
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion-scattering spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1995-2003 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile ultrahigh-vacuum thin-film deposition and analysis system is described. Films are deposited by electron beam evaporation with the possibility of ion beam bombardment of the growing film. Measurements of the reflectance and/or transmittance of the coating surface can be made simultaneously at 16 wavelengths across the visible or infrared spectrum. Ellipsometric measurements can also be made in situ, at a single wavelength and single angle of incidence, by an ellipsometer which can operate in either an automatic rotating analyzer mode or a manual nulling mode. The system is also equipped with an ion gun producing a submillimeter spot, and with a hemispherical sector, ion energy analyzer for ion scattering spectroscopy studies of the film surface. Results obtained during the deposition of a gold film are presented to demonstrate the capability of the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138408
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Magnetic domains in amorphous metal ribbons (invited) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3555-3559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of various static and dynamic studies of domains in amorphous metals by SEM and Bitter techniques are reviewed. Observations include domain widths and orientations, wall mobility and pinning, domain-wall energy measurements, and the effects of various distributions of residual or applied stresses on domain patterns. Domain structures resulting from longitudinal, transverse, and perpendicular anisotropies are contrasted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335490
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Magnetic excitations in neodymium (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3756-3757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While magnetic excitations in rare-earth systems in which the full ordered moment develops at each site have been comprehensively investigated, the excitations in sinusoidally modulated magnetic systems have proved to be rather elusive. Moreover, the character of the magnetic excitations in modulated magnets has been a subject of theoretical interest for many years. Neodymium metal exhibits a complicated sequence of modulated antiferromagnetic structures below TN =19.9 K. Following our first observations of magnetic excitations in this element, we have now carried out an extensive study of the spin dynamics of Nd, in both the modulated and paramagnetic phases. The wave vector and temperature dependence of several branches of excitations, whose energies range from 1 to 16 meV, have been measured and will be discussed in detail. Additionally, some results of the field dependence of the excitations will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334962
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Recent high-resolution neutron inelastic scattering studies of magnetic systems (invited) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3778-3783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The advent of highly efficient (neutron) cold sources in research reactors has permitted studies of the excitations in condensed matter with improved instrumental resolution and at much lower energies than previously possible. For example, the triple-axis crystal spectrometer on the ILL cold source permits studies with resolutions in the range from (roughly) 1 to 0.02 meV (20 μeV). Even better resolution, extending below 1 μeV, is provided by the neutron-spin-echo spectrometer. In this article, recent work on magnetic systems, at ILL, using high-resolution inelastic scattering techniques, is briefly reviewed. We shall describe a spin-echo investigation of the critical dynamics of iron and then a series of triple-axis measurements of critical scattering and magnetic excitations in a variety of materials, USb, Rb2CrCl4, Pr, Nd, TMMC, CsCoCl3, and, finally, a polarized neutron study of CsNiF3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334973
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Solid phase regrowth of low temperature Be-implanted GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1022-1028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared reflection and transmission measurements were used to study the thermally induced regrowth of (100) oriented, Be-implanted GaAs samples. The samples used in this study were implanted at low temperature (−100 °C) with 250-keV Be ions to a fluence of 6×1015 cm−2. The samples were postannealed at temperatures ranging from 100 to 550 °C. Isochronal and isothermal annealing at a series of temperatures between 180 and 240 °C were performed. Infrared reflection spectra were analyzed by using a three or four layer dielectric model. Analysis of the annealing data suggests that an amorphous layer first anneals to a second metastable amorphous state and then becomes a damaged crystalline layer after annealing at 220 °C for 12 h. The observed regrowth is not by a simple epitaxial process. After annealing at 400 °C for 1 h, the damage in the layer is reduced sufficiently for the refractive index to recover almost to the preimplantation value. On annealing at 450 °C free carriers are observed. From the measured average regrowth rate for the amorphous layer at various anneal temperature, an effective activation energy is estimated to be about 1.45 eV. This compares with activation energies of 2.3 eV for Si and 2.0 eV for Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334542
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1247-1251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing on Au:n-type (110) GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. Similiar trends in the annealing-induced changes in the barrier height of Au:n-type GaAs were found for 0.2 and 15 monolayer coverages as determined by PES and for thick film coverages (1000 A(ring)) as determined by current-voltage (I-V) and capacitance-voltage (C-V) measurement techniques. In each case, the barrier height was found to be stable for temperatures between 30 and 200 °C and between 300 and 500 °C; while a gradual decrease in the barrier height was found for annealing temperatures of 200–300 °C. These changes are correlated with the formation of a Au-Ga rich layer at the interface during anneals at 200 to 300 °C. Leakage currents were found to dominate the I-V characteristics in the devices which were annealed above the Au-Ga eutectic temperature. These peripheral leakage currents were eliminated by mesa-etching the devices. This allowed more reliable barrier height determinations using device measurements for higher annealing temperatures than has been previously reported for the Au-GaAs system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334521
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Comparative study of radiotracer and secondary-ion mass spectrometry profiling of gold diffused CdxHg1−xTe (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1404-1406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiotracer and secondary-ion mass spectrometry (SIMS) diffusion profiling techniques in CdxHg1−xTe (CMT) have been compared in order to provide a sounder basis for dopant characterization in this material. Au diffusion profiles were determined by the radiotracer and SIMS techniques after a diffusion anneal of 168 h at 225 °C in a flowing Ar ambient. The profiles obtained using the two different techniques were very similar, indicating the same Au diffusion behavior. It was shown that the radiotracer technique can be used for SIMS calibration of Au in CMT. It was also demonstrated that the two techniques give equally valid diffusion profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336090
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...