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  • Springer  (19)
  • American Institute of Physics  (9)
  • American Institute of Physics (AIP)  (9)
  • American Association for the Advancement of Science
  • 1985-1989  (37)
  • 1985  (37)
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5148-5161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptor (B, Al, Ga, and In) density versus time curves during avalanche electron injection (AEI) and constant-temperature thermal annealing experiments obtained from metal-oxide-silicon capacitors (MOSCs) show two distinguishable phases. The time dependence of the acceptor density during AEI shows an initial delay due to electron-impact release of hydrogen trapped in the gate conductor and oxide layers and a long-time decay due to the thermal capture and electron-impact emission of the atomic hydrogen at the group-III acceptor centers in the silicon surface layer. Thermal anneal of hydrogenated acceptor begins at 50 °C for boron and 100 °C for Al, Ga, and In. The initial phase during thermal annealing of AEIed MOSCs follows a first order kinetics at higher annealing temperatures, reaching a steady-state acceptor density before the second phase begins. The long-time anneal follows strictly a second-order kinetics which is rate limited by the recombination of two hydrogen atoms to form a molecule. Incomplete anneal is observed at higher temperatures when the dissociation rate of the hydrogen molecule becomes comparable with the recombination rate of two hydrogen atoms. Analytical solutions are obtained which account for all the details of the observed hydrogenation and annealing curves. These solutions are used to evaluate the thermal capture and emission rates and electron-impact emission rates of hydrogen or proton at the group-III impurity centers and the bimolecular generation and recombination rates of hydrogen. A new concept of hydrogen or proton traps in analogy to the electronic hole or electron traps is introduced to analyze the kinetics and account for the observed chemical trends between thermal capture and emission rates, thermal activation energy and bond strength. Chemical trends are noted which are consistent with the trapped proton activation energy and hydrogen bond strength trend, B〈Al〈Ga〈In.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335249
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  • 2
    Electronic Resource
    Electronic Resource
    Trap generation during low-fluence avalanche-electron injection in metal-oxide-silicon capacitors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1326-1329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trap generation during low-fluence avalanche-electron injection (AEI) in metal-oxide-silicon capacitors (MOSC's) with different fabrication processing cycles was investigated. Injection gate voltages from 45 to 65 V for an oxide of 1000 A(ring) thickness were used to simulate hot-electron effects in oxidized silicon under transistor operation conditions. Experimental results indicate that more negatively charged traps are generated in wet oxide than dry oxide. Different trap-generation phenomena in poly-Si- and aluminum-gate MOSC's were observed. The midgap voltage shift of aluminum-gate MOSC during AEI is not appreciably dependent on the magnitude of the peak AEI voltage, while that of poly-Si-gate MOSC has a strong dependence. The generation rate of interface states in aluminum-gate MOSC is much smaller than that of poly-Si-gate MOSC. The results are interpretable by the hydrogen model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336101
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  • 3
    Electronic Resource
    Electronic Resource
    Energy and density measurements of sloshing ions in tandem-mirror-experiment upgrade using solid-state probe techniques (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 179-183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy and flux of charge-exchange neutrals from the sloshing ions in the endplug of tandem-mirror-experiment upgrade were measured using solid-state probes. An average energy of the sloshing ions of 6 keV was inferred from the depth profile of deuterium implanted in a silicon sample exposed to the charge-exchange neutrals. A bounce-averaged Fokker–Planck code was used to calculate the sloshing-ion energy distribution. The calculated depth profile of deuterium in the silicon sample resulting from this energy distribution is in good agreement with the measured profile. Carbon resistance probes were used to measure the charge-exchange flux from which the central chord sloshing-ion line density was inferred. The line density of particles with energies〉2 keV was deduced to account for 60% of the total plasma line density in the endplug. By folding the sloshing-ion line density into the diamagnetic loop data, it was shown that the 1/e radial extent of the sloshing ions remained relatively constant from shot to shot at 14 cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335704
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  • 4
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth of AlGaInP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1380-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGayIn1−x−yP with x+y=0.51, lattice matched to the GaAs substrate, has been grown by organometallic vapor phase epitaxy. The simple, horizontal, IR heated system operates at atmospheric pressure using the reactants TMAl, TMGa, TMIn, PH3, and H2. Alloys giving room temperature, band edge photoluminescence (PL) have been grown in the temperature range 625–780 °C. Emission wavelengths as short as 5820 A(ring) (2.13 eV) are reported. High growth temperatures are found to give layers with the best surface morphology and PL intensity. The use of high temperatures is especially important for high Al content alloys. PL at x=0.2 is obtained only for temperatures above 740 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334491
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  • 5
    Electronic Resource
    Electronic Resource
    Observations on the phase transformation and its effect on the resistivity of WSi2 films prepared by low-pressure chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2980-2982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: WSi2 films prepared by low-pressure chemical vapor deposition were analyzed by backscattering, x-ray diffraction, and transmission electron microscopy (TEM). The backscattering results indicate that the composition of as-deposited WSi2 films does not change during low-temperature annealing. Crystallographic observations with x-ray diffraction and TEM on similar samples before and after various heat treatments provide evidence for the low temperature of hexagonal structure of the WSi2 films. It is transformed into the usual tetragonal structure during low-temperature annealing. Through x-ray diffraction examination, the transition temperature is found to be close to 600 °C. This phase transition is correlated to changes of the film resistivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335192
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  • 6
    Electronic Resource
    Electronic Resource
    Electromagnetic shielding properties of amorphous alloy shields for cathode ray tubes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3517-3519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because of the excellent soft magnetic properties of the amorphous alloy Fe40Ni38Mo4B18 (2826MB), we have made funnel-shaped shields for cathode ray tubes by combining the amorphous ribbons and ferromagnetic powders via resin transfer molding composite technology. The electromagnetic shielding properties of shields were improved by increasing the thickness of ribbons and the weight percentage of ferromagnetic powders. For a shield with six-layer ribbons, the maximum magnetic shielding effectiveness obtained near the applied magnetic field 2 Oe (dc and ac 60 Hz) was about 25–27 dB, and the magnetic shielding factors were improved to 27–30 dB by adding the ferromagnetic powders. After the field annealing of shields, the magnetic shielding effectiveness increased and the maximum values of 35–40 dB were shifted near the applied magnetic field 0.2 Oe. The electric field shielding effectiveness over the broadband spectrum 10 kHz–18 GHz was in the range 50–80 dB.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335046
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  • 7
    Electronic Resource
    Electronic Resource
    Nonperturbative theory of temperature-dependent optical dephasing in crystals. II. Pseudolocal phonons (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 2097-2106 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We continue our discussion of the nonperturbative theory of zero-phonon impurity lines in crystals formulated by Osad'ko and more recently by us. In Paper I of this series we evaluated our general results for the linewidth and shift for models of electronic coupling to both acoustic and optical phonons. Here we evaluate our general results for a simple model of electronic coupling to a pseudolocal phonon. The pseudolocal phonon is characterized by its frequency and lifetime in both the ground and excited electronic states. In addition to providing exact analytic expressions (reduced to quadrature) for the width and shift, we derive an approximate analytic expression for the linewidth that is bi-Arrhenius, with activation energies corresponding to the ground and excited state pseudolocal phonon frequencies. We discuss how our theoretical approach and results are related to the exchange theory of Harris, the optical Redfield theory of deBree and Wiersma, and the perturbation theory of Small and Jones and Zewail. In Paper III of this series, we compare the results of this paper and of Paper I to experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449352
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  • 8
    Electronic Resource
    Electronic Resource
    Theory of propagation and scattering of light in dilute polymer solutions: Effects of solvation on the optical response of worm-like chain molecules (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 835-849 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a continuum model for the optical response of dilute solutions of polymer molecules. The solvent is represented as a uniform dielectric continuum. Polymer molecules are modeled as flexible cylinders of constant cross section. The optical properties of a dissolved polymer molecule are represented by two different refractive indices in inner and outer concentric regions about the cylinder axis. The model is thus designed to take into account the effects of solvation on the solution optical response. The molecular conformation is represented by the worm-like chain model. Isotropic and depolarized light scattering intensities due to dissolved polymer molecules are evaluated approximately to quadratic order in the scattering wave vector. The refractive index increment of the solution is evaluated as well. The effects on these quantities of molecular shape, size, stiffness, and relative sizes of concentric regions and refractive indices within them are studied. We compare the results of this model to those of several other optical response models of polymer solutions. We discuss how the results of the present model differ from those obtained using the independent scatterer approximation and suggest experiments which would reveal these differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449498
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  • 9
    Electronic Resource
    Electronic Resource
    Nonperturbative theory of temperature-dependent optical dephasing in crystals. III. Comparison with experiment (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 2107-2115 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have applied the results of the nonperturbative theory of zero-phonon linewidths of impurities in crystals discussed by Osad'ko and us, and further developed by us in papers I and II of this series, to the analysis of several absorption, photon echo, and hole burning experiments. Two (relatively) high temperature absorption experiments on 1,3-diazaazulene in naphthalene and dilute ruby were analyzed with a model of Debye acoustic phonons. In both cases the Debye temperature was obtained from independent experiment or theory, and a one-parameter fit was performed on the temperature-dependent linewidth. It was found that (especially for diazaazulene) the systems are not in the weak coupling limit. For several low temperature experiments, where the dephasing is presumably due to pseudolocal phonons, the nonperturbative theory, coupled with the results of deBree and Wiersma, provides a reasonably complete understanding of the observed dephasing rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449353
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  • 10
    Electronic Resource
    Electronic Resource
    Large signal analysis of phase variations and bistability in degenerate four-wave mixing (1985)
    Springer
    Optical and quantum electronics 17 (1985), S. 149-152 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620785
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