ISSN:
1432-0630
Keywords:
78.60.Dg
;
71.55.Fr
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The annealing behavior of the 0.8 eV luminescence band in undoped semiinsulating GaAs has been investigated. It is found to be fully analogous to that of the AsGa antisite electron-paramagnetic-resonance signal. The radiative recombination of electrons with the doubly ionized AsGa double donor is discussed as the origin for the 0.8 eV band.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617713
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