Publication Date:
2011-08-16
Description:
Zinc-doped InGaAsP quaternary III-V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority-carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06-micron quantum efficiency of 7.5%/incident photon was observed at -90 C.
Keywords:
PHYSICS, SOLID-STATE
Type:
Applied Physics Letters; 22; Mar. 15
Format:
text
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