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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 31 (1992), S. 88-94 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 553-558 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator-semiconductor interfaces in metal-insulator-semiconductor (MIS) capacitors in accumulation. A new circuit model taking into account the capture of tunneling electrons by interface traps is derived. Theoretical and experimental results of Si3N4/Si/GaAs, Si3N4/epi-Si, and SiO2/epi-Si MIS capacitors are compared. The Si, Si3N4, and SiO2 layers investigated were deposited in situ by electron cyclotron resonance generated plasma in an ultrahigh vacuum chemical vapor deposition chamber. Frequency dispersion of both Cm and Rm can be adequately explained by the new circuit model.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 6163-6166 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The equation of state and heat capacity of fluid helium have been determined at temperatures from 98.15 to 298.15 K and at pressures from 100 to 1000 MPa using a new computational method. This is based on stepwise construction of ρT isobars starting from an experimental reference pρ isotherm and using the previously reported sound speed data of helium as a function of pressure and temperature. In the region of overlap, the calculated equation-of-state data show significant discrepancies from those obtained previously with direct measurements.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2511-2513 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interface properties of rapid thermal annealed in situ deposited gate quality Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) capacitors. Conductance measurements show a minimum interface trap density of 1011 eV−1 cm−2 located in the lower-half of the GaAs band gap. The quasi-static capacitance-voltage (QSCV) curve shows the largest dip toward the high-frequency C-V curve ever observed in compound semiconductor-based MIS structures. In spite of the lowest interface trap density for GaAs-based MIS structures ever reported, conductance data reveal a rapid increase in the density of interface traps in the upper-half of the band gap. Both the ac loss and the capacitive frequency dispersion of the interface traps agree with the single time constant model. The anomalous frequency dispersion of the measured capacitance can be satisfactory explained by the trap location in the band gap and rapid increase in the trap density in the upper-half of the band gap.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1826-1828 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized by a small frequency dispersion, small hysteresis, a flat band voltage close to zero, and a minimum interface trap density of 2.4×1011 eV−1 cm−2.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 3156-3163 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 40 (1992), S. 0 
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: The induced polarization response for a 2D horizontal cylinder embedded in a half-space is calculated for a uniform electric source. Response curves, in the form of apparent charge-ability taking into account the effect of the air-earth interface, exhibit a sharp decrease in amplitude with an increase in depth of burial of the target. The resistivity contrast between the cylinder and the host plays a dominant role in determining the IP response, i.e. the amplitude decreases considerably with the increase in resistivity contrast. The decrease is due to the defocusing effect caused by the resistive cylinder. The current lines tend to deviate away from the cylindrical target. In the case of a highly conducting cylinder, apparent defocusing takes place as current lines are confined to the surface of the conducting cylinder. An increase in chargeability contrast is reflected as a steady rise in the response. The peak response at the centre is reduced by about half the magnitude when the air–earth interface is not considered. The variation of response along the profile, though noticeable, is not as high as that obtained at the centre.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 167 (1951), S. 35-35 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Of forty-five specimens collected from different parts of Calcutta and examined, thirty-six adult insects and nymphs harboured in their guts a large number of trypanosomes in various stages of development. For the purpose of observation each insect was treated in the following manner. The entire ...
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 48 (1992), S. 666-669 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 189 (1992), S. 95-117 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this paper we consider the time-dependent diffuse reflection and transmission problems for a homogeneous anisotropically-scattering atmosphere of finite optical depth and solve it by the principle of invariance. Also we consider the time-dependent diffuse reflection and transmission of parallel rays by a slab consisting of two anisotropic homogeneous layers, whose scattering and transmission properties are known. It is shown how to express the time-dependent reflected and transmitted intensities in terms of their components. In a manner similar to that given by Tsujita (1968), we assumed that the upward-directed intensities of radiation at the boundary of the two layers are expressed by the sum of products of some auxiliary functions depending on only one argument. Then, after some analytical manipulations, three groups of systems of simultaneous integral equations governing the auxiliary functions are obtained.
    Type of Medium: Electronic Resource
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