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  • Springer  (84)
  • American Institute of Physics (AIP)  (20)
  • 2005-2009
  • 1990-1994
  • 1985-1989  (104)
  • 1945-1949
  • 1986  (104)
  • 1946
  • 1
    Electronic Resource
    Electronic Resource
    Deposition of the unreactive metal Au onto sputtered and cleaved Hg1−xCdxTe surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3157-3161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between thin layers of Au and both cleaved and sputtered p-type Hg0.72Cd0.28Te and sputtered p-type Hg0.79Cd0.21Te surfaces has been investigated with ultraviolet photoelectron spectroscopy using synchrotron radiation. Only a small loss of Hg from the interface was observed during Au deposition, in contrast to that seen during Al and In deposition reported elsewhere. The retention of Hg is explained by the lower stability of AuTe2 compared with HgTe, which makes the exchange reaction between Au and Hg unfavorable. Small differences in the Hg/Cd ratio following Au deposition with different surface preparations and material were noted. They were attributed to reduced stability of the ion-bombarded surface caused by sputter-induced defects and reduced strength of the Hg–Te bond, which resulted from the increased local CdTe concentration. Although Au diffused into the semiconductor to partially compensate for the cleavage-induced defects (which act as donors), it was not able to compensate appreciably for the larger number of sputter-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337728
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  • 2
    Electronic Resource
    Electronic Resource
    Photoemission from transition metals and their compounds (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 25 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission experiments on 3d transition metals are reviewed. The emphasis is on understanding the results of experiments, not on experimental details and methods. Extensive use is made of simple models. Much of the review pertains to resonances associated with the autoionization 3p53dn+1 →3p63dn−1 +e and their implications for electronic structure. Nonresonant ultraviolet and x-ray photoemission spectroscopies are also discussed. Photoemission and photoabsorption of transition-metal atoms are discussed first. Results for Mn are described at length to establish the validity of the autoionization mechanism. The results from atomic spectroscopy are used to interpret experiments on solids. The role of atomiclike excitations in solids is examined. Compounds of transition metals are analyzed in terms of ligand-field theory, which is shown to be inadequate. Newer theories involving configuration interaction are shown to agree better with experiment. Various mechanisms for the excitation of photoemission satellites are presented. In the metallic state, effects similar to those observed for the compounds occur. The existence of two-bound-hole final states is demonstrated. Their importance in Auger spectroscopy, valence- and core-emission satellites, and resonant photoemission is discussed. The effects of closely related electron correlations on the band structure are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336323
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering by coupled plasmon-phonon modes in n-type Ga1−xAlxAs epitaxial layers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 231-233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by coupled plasmon-phonon modes in Ga0.75Al0.25As epitaxial layers grown by molecular beam epitaxy and metalorganic chemical vapor deposition was studied. Good agreement between predicted and observed behavior was found. It was concluded that Raman scattering can be conveniently used for nondestructive and fast evaluation of free electron concentration in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336869
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of the reactive metals Al and In onto sputtered and cleaved Hg1−xCdxTe surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3150-3156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions of the reactive metals Al and In with both cleaved and sputtered p-type Hg1−xCdxTe surfaces have been investigated using synchrotron radiation-induced ultraviolet photoelectron spectroscopy. The sputtered surfaces are depleted of a fraction of their Hg (∼25% and ∼40% for x=0.21 and x=0.28 material, respectively, relative to the Hg found on the corresponding cleaved surfaces) and are more inverted than the cleaved surfaces with the Fermi level higher in the conduction band. During metal deposition, the cleaved and sputtered surfaces behave similarly: in the initial stages, the metal reacts with the HgTe alloy component to form a metal telluride and Hg, which leaves the surface region. At the same time, the inverted surface becomes more degenerate. After the metal has reacted with all the available HgTe within a certain surface region, an unreacted metallic film grows on the surface. Such identical behavior of the two types of surfaces is explained by the large difference in thermodynamic stability between HgTe and the metal tellurides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337802
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2897-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the Si/(Si+C) ratio in the reaction gas stream on the growth and properties of monocrystalline β-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of β-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si+C) ratio in the source gases have been initially obtained from thermodynamic calculations using the "solgasmix-pv'' computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si+C)=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337075
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  • 6
    Electronic Resource
    Electronic Resource
    Monocrystal elastic constants of NbC (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1614-1617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ultrasonic methods at ambient temperatures, for niobium carbide we determined the monocrystalline elastic stiffnesses: C11, C12, and C44 in Voigt's contracted notation. From these, we calculated the quasi-isotropic (polycrystalline) elastic constants and the elastic Debye characteristic temperature. Results derived from a Blackman diagram suggest that ionic forces contribute significantly to the elastic constants and to interatomic bonding. This conclusion applies not only to NbC but also to other MX carbides with an NaCl-type crystal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337249
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  • 7
    Electronic Resource
    Electronic Resource
    Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3199-3203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonhomogeneous distribution of the carrier transport properties in silicon on insulator thin films synthesized by oxygen implantation are determined using gate-controlled p-type Hall devices. The conductivity, Hall effect, and capacitance were measured between 77 and 300 K as a function of the gate voltage and then differentiated to obtain depth profiles. The hole mobility is high and nearly constant in the top 100 nm of the film but drops rapidly in the region containing implantation-induced defects. The very good quality of the top layer, similar to that of bulk Si, is confirmed by the temperature behavior of both the mobility and the ionized impurity concentration at various depths in the film. Acoustic phonon scattering is found to prevail above 120 K and Coulombian scattering below. A difference between the profile of the total number of holes and that of the mobile holes is observed at low temperatures and explained in terms of long-range potential fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337737
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  • 8
    Electronic Resource
    Electronic Resource
    Diagnostic software development for TFTR (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1895-1897 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The development of diagnostic software for the tokamak fusion test reactor (TFTR) machine is discussed. Key problems in the development process are the control of a large body of applications code and the provision of an environment that maximizes the productivity of the applications programmers. Control of the large body of code is accomplished through the use of a common method of software module specification, standard naming conventions, standard documentation, and automated utility programs to check the consistency of source code. The productivity of the applications programmers is enchanced by the presence of services providing graphics capabilities, terminal and user dialog management, data access, smoothing and compression, hardware device access and testing, and program execution tracing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139164
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  • 9
    Electronic Resource
    Electronic Resource
    CHERS software system—A microVAX-based diagnostic (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1889-1891 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The charge exchange recombination spectroscopy (CHERS) diagnostic is the first tokamak fusion test reactor (TFTR) diagnostic to utilize a microVAX II computer for device control, data acquisition, analysis, and event-driven processing. The CHERS system is controlled from a single interactive menu-driven process, enabling the diagnostic physicist to perform interactive device control and monitoring, calibration and control file editing, and to control automatic device setup, data acquisition and display, and postshot analysis. All software is written in fortran. Device control is accomplished using the (ORNL) VAX CAMAC and TAU real-time image processing system (RTIPS) fortran subroutines. Standard VAX system services are utilized, including the use of event flags, global sections, logical names, security services, process control, and spawning of subprocesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139162
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  • 10
    Electronic Resource
    Electronic Resource
    Photoconductor x/γ-ray detectors and x-ray bolometers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2182-2183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Photoconductors are very promising x/γ-ray detectors and x-ray bolometers for pulsed x/γ-ray measurements. They are fast, sensitive, and theoretically flat in spectral response for low energy x rays. We report our tests of InP:Fe, GaAs, and GaAs:Cr, both neutron damaged and undamaged, at Nova laser, Febetrons, and electron linear accelerators. The temporal and spectral responses are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138724
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