ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Good NiAl single-crystal films were successfully grown on AlAs at high temperature (600 °C) by means of molecular-beam epitaxy. It was found that there existed three characteristic temperature regions in the crystal growth. Below 300 °C, the in situ formation of NiAl failed. Above 300 °C, NiAl was formed in situ, while other Ni-Al intermetallic compounds (Ni3Al2, NiAl3, Ni3Al) also appeared. Above 400 °C, remarkable improvements of the crystallinity, epitaxy, and monocrystallinity were found. The best NiAl film was obtained at 600 °C, where no interfacial disorder attributed to the interdiffusion and no film discontinuity due to balling up were observed. It is suggested that high-temperature growth is powerful for synthesis of high-quality NiAl-(Al,Ga)As heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348749
Permalink