Publikationsdatum:
2011-08-24
Beschreibung:
Photovoltaic properties of GaAlAs/GaAs heteroface converters were measured using a 0.81-micron diode laser. Results indicate that the converters under consideration are promising devices for converting diode-laser radiation to electricity. Conversion efficiency as high as 45 percent has been obtained using GaAs devices, while Si converters of the SSF type give efficiencies up to 34.2 percent.
Schlagwort(e):
ENERGY PRODUCTION AND CONVERSION
Materialart:
; : Conference on the
Format:
text