ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigated the characteristics of the HfO2 layer deposited by ALD method inMOSFET devices where the HfO2 film is incorporated as the gate dielectric layer. The HfO2 film was annealed with forming gas (FG) or high-pressure D2 gas to investigate the effect of annealing on the characteristics of the MOSFET device. It was found that the drain current and transconductance of the D2-annealed MOSFET device increased remarkably by ~10% compared with those ofFG-annealed MOSFET device, which is a definite improvement that may contribute to reliable operation of the ultra high-density MOSFET devices
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/12/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.510-511.190.pdf