Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
57 (1986), S. 206-208
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A furnace for annealing ion implantation damage in III-V semiconductors has been built and tested. Designed for research applications, the furnace can accommodate odd shapes of material up to 2 in. in diameter. Samples are loaded onto a novel cantilevered support and are not moved during the annealing operation, facilitating proximity annealing techniques. Both chambers of this dual chambered system are O-ring sealed for added safety during annealing in an arsine gas ambient. Electron mobilities between 4400 and 4600 cm2/V s at 300 K are routinely measured for 2×1017 cm−3 gallium arsenide material annealed in this sytem. The system has been used to anneal indium phosphide as well as gallium arsenide wafers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1138970
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